BC856BDW1T1
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onsemi BC856BDW1T1

Manufacturer No:
BC856BDW1T1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 65V 0.1A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BDW1T1 is a Dual PNP Bipolar Transistor produced by onsemi, designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is optimized for low power surface mount applications. This transistor is part of the BC856 series and is marked with the code '3B' for easy identification.

The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, Pb-free packages are available, ensuring compliance with RoHS standards.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 65 V
Collector-Base Voltage VCBO - - 80 V
Emitter-Base Voltage VEBO - - 5.0 V
Collector Current - Continuous IC - - 100 mA mAdc
Saturation Voltage (VCE(sat)) VCE(sat) - - 0.3 V
Base-Emitter Saturation Voltage VBE(sat) - - 0.7 V
Base-Emitter Turn-On Voltage VBE(on) - - 0.6 V
Current Gain (hFE) hFE 220 - 475 -
Transition Frequency (fT) fT 100 - - MHz
Total Device Dissipation PTM - - 0.38 W

Key Features

  • Dual PNP Bipolar Transistor: Designed for general purpose amplifier applications.
  • Package Type: Housed in SOT-363/SC-88, suitable for low power surface mount applications.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Rohs Compliant: Pb-free packages available.
  • Low VCE(sat): Saturation voltage of 0.3 V, ensuring efficient operation.
  • High Current Gain: hFE ranges from 220 to 475, providing reliable amplification.
  • High Transition Frequency: fT of 100 MHz, suitable for high-frequency applications.

Applications

  • General Purpose Amplifier Applications: Suitable for a wide range of amplifier circuits.
  • Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive applications.
  • Surface Mount Applications: Ideal for low power surface mount designs.
  • High-Frequency Circuits: Transition frequency of 100 MHz makes it suitable for high-frequency applications.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC856BDW1T1?

    The maximum collector-emitter voltage (VCEO) is 65 V.

  2. What is the package type of the BC856BDW1T1?

    The BC856BDW1T1 is housed in the SOT-363/SC-88 package.

  3. Is the BC856BDW1T1 RoHS compliant?
  4. What is the maximum collector current (IC) of the BC856BDW1T1?

    The maximum collector current (IC) is 100 mA.

  5. What is the saturation voltage (VCE(sat)) of the BC856BDW1T1?

    The saturation voltage (VCE(sat)) is 0.3 V.

  6. What is the transition frequency (fT) of the BC856BDW1T1?

    The transition frequency (fT) is 100 MHz.

  7. Is the BC856BDW1T1 suitable for automotive applications?
  8. What is the base-emitter turn-on voltage (VBE(on)) of the BC856BDW1T1?

    The base-emitter turn-on voltage (VBE(on)) is 0.6 V.

  9. What is the current gain (hFE) range of the BC856BDW1T1?

    The current gain (hFE) ranges from 220 to 475.

  10. Where can I find additional datasheets and resources for the BC856BDW1T1?

    You can find additional datasheets, footprints, and schematics on the onsemi website or through authorized distributors like Mouser and Avnet.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:380mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Same Series
BC856BDW1T1
BC856BDW1T1
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BC858CDW1T1G
BC858CDW1T1G
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Similar Products

Part Number BC856BDW1T1 BC856BDW1T1G BC856BDW1T3 BC857BDW1T1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete
Transistor Type 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual) -
Current - Collector (Ic) (Max) 100mA 100mA 100mA -
Voltage - Collector Emitter Breakdown (Max) 65V 65V 65V -
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V -
Power - Max 380mW 380mW 380mW -
Frequency - Transition 100MHz 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 -
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 -

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