Overview
The BC856BDW1T1 is a Dual PNP Bipolar Transistor produced by onsemi, designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is optimized for low power surface mount applications. This transistor is part of the BC856 series and is marked with the code '3B' for easy identification.
The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, Pb-free packages are available, ensuring compliance with RoHS standards.
Key Specifications
Characteristic | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 65 | V |
Collector-Base Voltage | VCBO | - | - | 80 | V |
Emitter-Base Voltage | VEBO | - | - | 5.0 | V |
Collector Current - Continuous | IC | - | - | 100 mA | mAdc |
Saturation Voltage (VCE(sat)) | VCE(sat) | - | - | 0.3 | V |
Base-Emitter Saturation Voltage | VBE(sat) | - | - | 0.7 | V |
Base-Emitter Turn-On Voltage | VBE(on) | - | - | 0.6 | V |
Current Gain (hFE) | hFE | 220 | - | 475 | - |
Transition Frequency (fT) | fT | 100 | - | - | MHz |
Total Device Dissipation | PTM | - | - | 0.38 | W |
Key Features
- Dual PNP Bipolar Transistor: Designed for general purpose amplifier applications.
- Package Type: Housed in SOT-363/SC-88, suitable for low power surface mount applications.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Rohs Compliant: Pb-free packages available.
- Low VCE(sat): Saturation voltage of 0.3 V, ensuring efficient operation.
- High Current Gain: hFE ranges from 220 to 475, providing reliable amplification.
- High Transition Frequency: fT of 100 MHz, suitable for high-frequency applications.
Applications
- General Purpose Amplifier Applications: Suitable for a wide range of amplifier circuits.
- Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive applications.
- Surface Mount Applications: Ideal for low power surface mount designs.
- High-Frequency Circuits: Transition frequency of 100 MHz makes it suitable for high-frequency applications.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BC856BDW1T1?
The maximum collector-emitter voltage (VCEO) is 65 V.
- What is the package type of the BC856BDW1T1?
The BC856BDW1T1 is housed in the SOT-363/SC-88 package.
- Is the BC856BDW1T1 RoHS compliant?
- What is the maximum collector current (IC) of the BC856BDW1T1?
The maximum collector current (IC) is 100 mA.
- What is the saturation voltage (VCE(sat)) of the BC856BDW1T1?
The saturation voltage (VCE(sat)) is 0.3 V.
- What is the transition frequency (fT) of the BC856BDW1T1?
The transition frequency (fT) is 100 MHz.
- Is the BC856BDW1T1 suitable for automotive applications?
- What is the base-emitter turn-on voltage (VBE(on)) of the BC856BDW1T1?
The base-emitter turn-on voltage (VBE(on)) is 0.6 V.
- What is the current gain (hFE) range of the BC856BDW1T1?
The current gain (hFE) ranges from 220 to 475.
- Where can I find additional datasheets and resources for the BC856BDW1T1?
You can find additional datasheets, footprints, and schematics on the onsemi website or through authorized distributors like Mouser and Avnet.