MAT14ARZ-R7
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Analog Devices Inc. MAT14ARZ-R7

Manufacturer No:
MAT14ARZ-R7
Manufacturer:
Analog Devices Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 4NPN 40V 0.03A 14SO
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Introduction

Overview

The MAT14ARZ-R7 is a quad monolithic NPN bipolar transistor array manufactured by Analog Devices. This component is designed to offer excellent parametric matching, making it ideal for precision amplifier and nonlinear circuit applications. The MAT14ARZ-R7 features high current gain, low noise, and excellent logarithmic conformance, which are crucial for applications requiring high precision and reliability.

Key Specifications

Parameter Value Unit
Transistor Polarity Quad NPN
Maximum Collector-Emitter Voltage 40 V
Maximum Collector Current 30 mA
Low Offset Voltage 400 μV
High Current Gain 300 minimum
Current Gain Match 4% maximum
Low Voltage Noise Density 3 nV/√Hz at 100 Hz, I = 1 mA
Bulk Resistance (rBE) 0.6 Ω maximum
Gain-Bandwidth Product 300 MHz typical
Operating Temperature Range -40°C to +85°C
Package Style 14-lead SOIC (Small Outline IC)

Key Features

  • Low offset voltage of 400 μV maximum
  • High current gain of 300 minimum
  • Excellent current gain match within 4% maximum
  • Low voltage noise density of 3 nV/√Hz maximum at 100 Hz, I = 1 mA
  • Excellent logarithmic conformance
  • Guaranteed matching for all transistors
  • Bulk resistance (rBE) of 0.6 Ω maximum
  • Gain-bandwidth product of 300 MHz typical
  • Operating temperature range of -40°C to +85°C

Applications

  • Low noise op amp front end
  • Current mirror and current sink/source
  • Low noise instrumentation amplifiers
  • Voltage controlled attenuators
  • Log amplifiers

Q & A

  1. What is the maximum collector-emitter voltage of the MAT14ARZ-R7?

    The maximum collector-emitter voltage is 40 V.

  2. What is the typical current gain of the MAT14ARZ-R7?

    The typical current gain is 300 minimum.

  3. What is the maximum current gain match for the MAT14ARZ-R7?

    The maximum current gain match is within 4%.

  4. What is the low voltage noise density of the MAT14ARZ-R7 at 100 Hz?

    The low voltage noise density is 3 nV/√Hz at 100 Hz, I = 1 mA.

  5. What is the operating temperature range of the MAT14ARZ-R7?

    The operating temperature range is -40°C to +85°C.

  6. What type of package does the MAT14ARZ-R7 come in?

    The MAT14ARZ-R7 comes in a 14-lead SOIC (Small Outline IC) package.

  7. What are some common applications of the MAT14ARZ-R7?

    Common applications include low noise op amp front ends, current mirrors and current sink/sources, low noise instrumentation amplifiers, voltage controlled attenuators, and log amplifiers.

  8. How does the MAT14ARZ-R7 ensure long-term stability of matching parameters?

    The long-term stability of matching parameters is guaranteed by the protection diodes across the base-emitter junction of each transistor, preventing degradation due to reverse bias.

  9. What is the gain-bandwidth product of the MAT14ARZ-R7?

    The gain-bandwidth product is 300 MHz typical.

  10. Is the MAT14ARZ-R7 suitable for high precision and reliability applications?

Product Attributes

Transistor Type:4 NPN (Quad) Matched Pairs
Current - Collector (Ic) (Max):30mA
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:60mV @ 100µA, 1mA
Current - Collector Cutoff (Max):3nA
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:300MHz
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:14-SOIC (0.154", 3.90mm Width)
Supplier Device Package:14-SOIC
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In Stock

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Same Series
MAT14ARZ-R7
MAT14ARZ-R7
TRANS 4NPN 40V 0.03A 14SO
MAT14ARZ
MAT14ARZ
TRANS 4NPN 40V 0.03A 14SO

Similar Products

Part Number MAT14ARZ-R7 MAT14ARZ-RL
Manufacturer Analog Devices Inc. Analog Devices Inc.
Product Status Active Active
Transistor Type 4 NPN (Quad) Matched Pairs 4 NPN (Quad) Matched Pairs
Current - Collector (Ic) (Max) 30mA 30mA
Voltage - Collector Emitter Breakdown (Max) 40V 40V
Vce Saturation (Max) @ Ib, Ic 60mV @ 100µA, 1mA 60mV @ 100µA, 1mA
Current - Collector Cutoff (Max) 3nA 3nA
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition 300MHz 300MHz
Operating Temperature -40°C ~ 85°C (TA) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 14-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package 14-SOIC 14-SOIC

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