Overview
The SBC847BPDXV6T1G is a dual NPN/PNP general-purpose transistor produced by onsemi. This component is designed for low power surface mount applications and is housed in the SOT-563 package. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The transistor is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (NPN) | VCEO | - | - | 45 | V |
| Collector-Emitter Voltage (PNP) | VCEO | - | - | -45 | V |
| Collector-Base Voltage (NPN) | VCBO | - | - | 50 | V |
| Collector-Base Voltage (PNP) | VCBO | - | - | -50 | V |
| Emitter-Base Voltage (NPN) | VEBO | - | - | 6.0 | V |
| Emitter-Base Voltage (PNP) | VEBO | - | - | -5.0 | V |
| Collector Current - Continuous (NPN) | IC | - | - | 100 | mAdc |
| Collector Current - Continuous (PNP) | IC | - | - | -100 | mAdc |
| DC Current Gain (NPN) | hFE | 200 | 290 | 475 | - |
| DC Current Gain (PNP) | hFE | 200 | 290 | 475 | - |
| Collector-Emitter Saturation Voltage (NPN) | VCE(sat) | - | - | 0.25 | V |
| Collector-Emitter Saturation Voltage (PNP) | VCE(sat) | - | - | -0.3 | V |
| Base-Emitter Saturation Voltage (NPN) | VBE(sat) | - | - | 0.7 | V |
| Base-Emitter Saturation Voltage (PNP) | VBE(sat) | - | - | -0.7 | V |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other critical applications.
- Pb-free and RoHS compliant.
- Housed in the SOT-563 package, designed for low power surface mount applications.
- High DC current gain (hFE) with a typical value of 290.
- Low collector-emitter and base-emitter saturation voltages.
- High collector-emitter breakdown voltages.
- Wide junction and storage temperature range (-55°C to +150°C).
Applications
The SBC847BPDXV6T1G transistor is versatile and can be used in a variety of general-purpose amplifier applications. It is particularly suitable for:
- Automotive systems due to its AEC-Q101 qualification.
- Low power surface mount designs.
- Switching and amplification circuits.
- Consumer electronics.
- Industrial control systems.
Q & A
- What is the package type of the SBC847BPDXV6T1G transistor? The transistor is housed in the SOT-563 package.
- Is the SBC847BPDXV6T1G Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
- What are the typical DC current gain values for the NPN and PNP transistors? The typical DC current gain (hFE) values are 290 for both NPN and PNP transistors.
- What is the maximum collector-emitter voltage for the NPN transistor? The maximum collector-emitter voltage (VCEO) for the NPN transistor is 45 V.
- What is the maximum collector-emitter voltage for the PNP transistor? The maximum collector-emitter voltage (VCEO) for the PNP transistor is -45 V.
- What is the junction and storage temperature range for this transistor? The junction and storage temperature range is -55°C to +150°C.
- Is the SBC847BPDXV6T1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What are the typical collector-emitter saturation voltages for the NPN and PNP transistors? The typical collector-emitter saturation voltage (VCE(sat)) is 0.25 V for NPN and -0.3 V for PNP transistors.
- What is the thermal resistance - junction-to-ambient for this transistor? The thermal resistance - junction-to-ambient (RJA) is 250 °C/W when both junctions are heated.
- What is the current-gain bandwidth product for this transistor? The current-gain bandwidth product (fT) is 100 MHz for both NPN and PNP transistors.
