Overview
The BC846AS is a dual NPN small signal surface mount transistor produced by Diodes Incorporated, although it is also distributed by other companies such as Panjit International Inc. under the part number BC846AS_R1_00001. This transistor is housed in an ultra-small SOT363 package, making it ideal for applications where space is limited. It is designed for high reliability and complies with various industry standards, including AEC-Q101 for automotive applications and RoHS compliance.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 80 | V | IC = 100µA, IB = 0 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 65 | V | IC = 10mA, IB = 0 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 100µA, IC = 0 | ||
| DC Current Gain | hFE | 110 | 220 | VCE = 5V, IC = 2mA | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 90 | 200 | mV | IC = 10mA, IB = 0.5mA | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 700 | 900 | mV | IC = 10mA, IB = 0.5mA | |
| Base-Emitter Voltage | VBE(ON) | 580 | 660 | mV | VCE = 5V, IC = 2mA | |
| Collector-Cutoff Current | ICBO | 15 | nA | VCB = 40V | ||
| Emitter-Cutoff Current | ICES | 15 | nA | VCE = 80V, IC = 0 | ||
| Gain Bandwidth Product | fT | 100 | MHz | VCE = 5V, IC = 10mA, f = 100MHz |
Key Features
- Ultra-small SOT363 surface mount package, ideal for automated insertion and space-constrained applications.
- High collector-emitter breakdown voltage (BVCEO > 65V) and high collector-base breakdown voltage (BVCBO > 80V).
- Ideally suited for switching and AF amplifier applications.
- Complementary PNP type available (BC856AS).
- Totally lead-free and fully RoHS compliant, halogen and antimony free, making it a “green” device.
- Qualified to AEC-Q101 standards for high reliability.
- An automotive-compliant part is available under a separate datasheet (BC846ASQ).
Applications
The BC846AS transistor is versatile and can be used in a variety of applications, including:
- Switching circuits: Due to its high breakdown voltages and low saturation voltages, it is suitable for high-frequency switching applications.
- AF (Audio Frequency) amplifiers: Its high current gain and low noise characteristics make it ideal for audio amplification.
- Automotive systems: The automotive-compliant version (BC846ASQ) is designed for use in automotive electronics where high reliability is crucial.
- General-purpose amplification: It can be used in various general-purpose amplifier circuits where a small, reliable transistor is needed.
Q & A
- What is the package type of the BC846AS transistor?
The BC846AS transistor is housed in an ultra-small SOT363 surface mount package. - What are the key breakdown voltages of the BC846AS transistor?
The key breakdown voltages are BVCEO > 65V and BVCBO > 80V. - Is the BC846AS transistor RoHS compliant?
Yes, the BC846AS transistor is totally lead-free and fully RoHS compliant. - What are the typical applications of the BC846AS transistor?
The BC846AS transistor is typically used in switching circuits, AF amplifiers, and general-purpose amplification. - Is there an automotive-compliant version of the BC846AS transistor?
Yes, an automotive-compliant version is available under the part number BC846ASQ. - What is the gain bandwidth product of the BC846AS transistor?
The gain bandwidth product (fT) is 100 MHz at VCE = 5V, IC = 10mA, and f = 100MHz. - What is the DC current gain (hFE) of the BC846AS transistor?
The DC current gain (hFE) is between 110 and 220 at VCE = 5V and IC = 2mA. - Is the BC846AS transistor suitable for automated insertion?
Yes, it is ideally suited for automated insertion due to its ultra-small package. - What is the collector-emitter saturation voltage (VCE(SAT)) of the BC846AS transistor?
The collector-emitter saturation voltage (VCE(SAT)) is typically between 90 and 200 mV at IC = 10mA and IB = 0.5mA. - What is the base-emitter saturation voltage (VBE(SAT)) of the BC846AS transistor?
The base-emitter saturation voltage (VBE(SAT)) is typically between 700 and 900 mV at IC = 10mA and IB = 0.5mA.
