BC817-16_R1_00001
  • Share:

Panjit International Inc. BC817-16_R1_00001

Manufacturer No:
BC817-16_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-16_R1_00001 is a general-purpose NPN bipolar junction transistor (BJT) produced by Panjit International Inc. This transistor is part of the BC817 series, known for its versatility in various electronic applications. It features an epitaxial planar die construction, making it suitable for both switching and amplifier roles. The device is packaged in a SOT-23 (TO-236-3) surface-mount package, which is compact and ideal for modern electronic designs.

Key Specifications

Parameter Symbol Min Max Unit
Collector-Emitter Voltage VCEO - - 45 V
Collector-Base Voltage VCBO - - 50 V
Emitter-Base Voltage VEBO - - 5.0 V
Collector Current - Continuous IC - - 500 mA
Peak Collector Current ICM - - 1000 mA
Total Power Dissipation PTOT - - 330 mW
Junction and Storage Temperature Range TJ, TSTG -55 - 150 °C
DC Current Gain (hFE) at IC = 100 mA, VCE = 1 V hFE 100 160 250 -
Collector-Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA VCE(sat) - - 0.7 V
Base-Emitter On Voltage at IC = 500 mA, VCE = 1 V VBE(on) - - 1.2 V
Current-Gain Bandwidth Product at IC = 10 mA, VCE = 5 V, f = 100 MHz fT - - 100 MHz

Key Features

  • NPN Epitaxial Silicon, Planar Design: Ensures high reliability and performance in a variety of applications.
  • General Purpose Amplifier Applications: Suitable for both switching and amplifier roles.
  • Lead-Free and RoHS Compliant: Compliant with EU RoHS 2011/65/EU directive, making it environmentally friendly.
  • Halogen and Antimony Free: Uses green molding compound, adhering to IEC61249 standards.
  • AEC-Q101 Qualified: Meets automotive standards for high reliability.
  • Compact SOT-23 Package: Ideal for surface-mount applications, offering a small footprint.
  • High Current Capability: Collector current up to 500 mA and peak collector current up to 1000 mA.

Applications

  • General-Purpose Switching: Used in various switching circuits due to its high current gain and low saturation voltage.
  • Amplifier Applications: Suitable for audio frequency (AF) amplifiers and other general-purpose amplifier roles.
  • Automotive Electronics: Qualified to AEC-Q101 standards, making it reliable for automotive applications.
  • Consumer Electronics: Used in a wide range of consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the collector-emitter voltage rating of the BC817-16_R1_00001 transistor?

    The collector-emitter voltage rating is 45 V.

  2. What is the maximum collector current for the BC817-16_R1_00001 transistor?

    The maximum collector current is 500 mA.

  3. Is the BC817-16_R1_00001 transistor RoHS compliant?

    Yes, it is lead-free and compliant with the EU RoHS 2011/65/EU directive.

  4. What is the typical DC current gain (hFE) of the BC817-16_R1_00001 transistor at IC = 100 mA and VCE = 1 V?

    The typical DC current gain (hFE) is 160.

  5. What is the collector-emitter saturation voltage of the BC817-16_R1_00001 transistor at IC = 500 mA and IB = 50 mA?

    The collector-emitter saturation voltage is 0.7 V.

  6. What is the current-gain bandwidth product of the BC817-16_R1_00001 transistor?

    The current-gain bandwidth product is 100 MHz at IC = 10 mA, VCE = 5 V, and f = 100 MHz.

  7. What is the junction and storage temperature range for the BC817-16_R1_00001 transistor?

    The junction and storage temperature range is -55°C to 150°C.

  8. Is the BC817-16_R1_00001 transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What package type is used for the BC817-16_R1_00001 transistor?

    The transistor is packaged in a SOT-23 (TO-236-3) surface-mount package.

  10. What are the typical applications of the BC817-16_R1_00001 transistor?

    It is used in general-purpose switching, amplifier applications, and automotive electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.19
5,145

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC817-16_R1_00001 BC817-16W_R1_00001
Manufacturer Panjit International Inc. Panjit International Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 330 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23 SOT-323

Related Product By Categories

PMBT5550,235
PMBT5550,235
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
BC847AMB,315
BC847AMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
NSV1C201LT1G
NSV1C201LT1G
onsemi
TRANS NPN 100V 2A SOT23-3
BC846BLT3G
BC846BLT3G
onsemi
TRANS NPN 65V 0.1A SOT23-3
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
BCX52-16TF
BCX52-16TF
Nexperia USA Inc.
TRANS PNP 60V 1A SOT89
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP

Related Product By Brand

BAV170-AU_R1_000A1
BAV170-AU_R1_000A1
Panjit International Inc.
SOT-23, SWITCHING
BAS21A-AU_R1_000A1
BAS21A-AU_R1_000A1
Panjit International Inc.
SOT-23, SWITCHING
BAT54TB6-AU_R1_000A1
BAT54TB6-AU_R1_000A1
Panjit International Inc.
SOT-563, SKY
1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
BAS40WS-AU_R1_000A1
BAS40WS-AU_R1_000A1
Panjit International Inc.
SOD-323, SKY
BZX84C4V3TW_R1_00001
BZX84C4V3TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
BZX84C18W_R1_00001
BZX84C18W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84C20-AU_R1_000A1
BZX84C20-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B3V6-AU_R1_000A1
BZX84B3V6-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
1N5347B_R2_00001
1N5347B_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
BC856B-AU_R1_000A1
BC856B-AU_R1_000A1
Panjit International Inc.
TRANS PNP 65V 0.1A SOT23
BC847C-AU_R1_000A1
BC847C-AU_R1_000A1
Panjit International Inc.
TRANS NPN 45V 0.1A SOT23