Overview
The BC857CW/DG/B4F is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of Nexperia's extensive portfolio of bipolar transistors, designed for a wide range of applications. It is housed in a small SOT323 (SC-70) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | PNP |
| Package | SOT323 (SC-70) |
| Collector-Base Voltage (Vcbo) | 65 V |
| Collector-Emitter Voltage (Vceo) | 45 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) [max] | 100 mA |
| Power Dissipation (Pd) | 200 mW |
| DC Current Gain (hFE) [min/max] | 420 / 800 |
| Maximum Junction Temperature (Tj) | 150°C |
| Transition Frequency (ft) [min] | 100 MHz |
Key Features
- Low current capability up to 100 mA.
- Low voltage operation with a maximum collector-emitter voltage of 45 V.
- High DC current gain (hFE) ranging from 420 to 800.
- Compact SOT323 (SC-70) package for space-efficient designs.
- Maximum junction temperature of 150°C.
- Transition frequency of at least 100 MHz.
Applications
The BC857CW/DG/B4F transistor is versatile and can be used in various applications across different industries, including:
- Automotive systems for general-purpose switching and amplification.
- Industrial control systems.
- Consumer electronics for low-power amplification and switching.
- Mobile and wearable devices where space and efficiency are critical.
- General-purpose electronic circuits requiring reliable and efficient bipolar transistors.
Q & A
- What is the maximum collector current of the BC857CW/DG/B4F transistor?
The maximum collector current is 100 mA. - What is the package type of the BC857CW/DG/B4F transistor?
The package type is SOT323 (SC-70). - What is the maximum collector-emitter voltage of the BC857CW/DG/B4F transistor?
The maximum collector-emitter voltage is 45 V. - What is the DC current gain (hFE) range of the BC857CW/DG/B4F transistor?
The DC current gain (hFE) ranges from 420 to 800. - What is the maximum junction temperature of the BC857CW/DG/B4F transistor?
The maximum junction temperature is 150°C. - What is the transition frequency of the BC857CW/DG/B4F transistor?
The transition frequency is at least 100 MHz. - Is the BC857CW/DG/B4F transistor suitable for automotive applications?
Yes, it is suitable for automotive applications due to its robust specifications and compact package. - Can the BC857CW/DG/B4F transistor be used in high-frequency applications?
Yes, it can be used in high-frequency applications due to its transition frequency of at least 100 MHz. - What is the power dissipation capability of the BC857CW/DG/B4F transistor?
The power dissipation capability is 200 mW. - Is the BC857CW/DG/B4F transistor RoHS compliant?
Yes, the transistor is RoHS compliant.
