BUK9Y30-75B/C1,115
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NXP USA Inc. BUK9Y30-75B/C1,115

Manufacturer No:
BUK9Y30-75B/C1,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y30-75B/C1,115 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc., now known as Nexperia. This device is part of the TrenchMOS family and is designed for use in automotive and general-purpose power switching applications. It features a robust and efficient design, making it suitable for thermally demanding environments and critical automotive systems.

Key Specifications

ParameterConditionsMinTypMaxUnit
Drain-Source Voltage (VDS)Tj ≥ 25 °C; Tj ≤ 175 °C--75V
Drain Current (ID)VGS = 5 V; Tmb = 25 °C--34A
Total Power Dissipation (Ptot)Tmb = 25 °C--85W
Drain-Source On-State Resistance (RDSon)VGS = 5 V; ID = 15 A; Tj = 25 °C-2530
Gate-Source Threshold Voltage (VGS(th))ID = 1 mA; VDS = VGS; Tj = 25 °C1.11.52V
Drain-Source Breakdown Voltage (V(BR)DSS)ID = 0.25 mA; VGS = 0 V; Tj = 25 °C75--V
Avalanche Ruggedness (EDS(AL)S)ID = 34 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C--78mJ

Key Features

  • Low conduction losses due to low on-state resistance (RDSon)
  • AEC-Q101 compliant, suitable for automotive critical applications
  • Suitable for logic level gate drive sources
  • Thermally robust, with a junction temperature rating of up to 175 °C
  • Supports 12 V, 24 V, and 42 V loads
  • High avalanche ruggedness

Applications

  • Automotive systems
  • General purpose power switching
  • Motors, lamps, and solenoids
  • Power management
  • Load switching
  • Linear-mode voltage regulators
  • Backlight units
  • Motor drive
  • LED lighting
  • Relay replacement

Q & A

  1. What is the BUK9Y30-75B/C1,115? The BUK9Y30-75B/C1,115 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) designed for automotive and general-purpose power switching applications.
  2. Who is the manufacturer of the BUK9Y30-75B/C1,115? The manufacturer is NXP USA Inc., now known as Nexperia.
  3. What is the maximum drain-source voltage (VDS) of the BUK9Y30-75B/C1,115? The maximum drain-source voltage is 75 V.
  4. What is the maximum drain current (ID) of the BUK9Y30-75B/C1,115? The maximum drain current is 34 A.
  5. What is the operating temperature range of the BUK9Y30-75B/C1,115? The operating temperature range is from -55 °C to 175 °C.
  6. Is the BUK9Y30-75B/C1,115 AEC-Q101 compliant? Yes, it is AEC-Q101 compliant, making it suitable for automotive critical applications.
  7. What are some common applications of the BUK9Y30-75B/C1,115? Common applications include automotive systems, general purpose power switching, motors, lamps, and solenoids.
  8. What is the typical on-state resistance (RDSon) of the BUK9Y30-75B/C1,115? The typical on-state resistance is 25 mΩ.
  9. What is the gate-source threshold voltage (VGS(th)) of the BUK9Y30-75B/C1,115? The gate-source threshold voltage is typically between 1.1 V and 2 V at 25 °C.
  10. Is the BUK9Y30-75B/C1,115 suitable for thermally demanding environments? Yes, it is designed to handle thermally demanding environments with a junction temperature rating of up to 175 °C.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
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