BCP5316TA
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Diodes Incorporated BCP5316TA

Manufacturer No:
BCP5316TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5316TA is a PNP silicon planar medium power bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is designed for high-power and high-voltage applications, particularly in the automotive and industrial sectors. It features a surface mount package in the SOT-223 format, making it suitable for surface mounting circuits. The BCP5316TA is AEC-Q101 qualified, ensuring it meets the stringent requirements for automotive electronics.

Key Specifications

ParameterValueUnit
PolarityPNP
VCEO, VCES80V
IC (Continuous Collector Current)1A
ICM (Peak Collector Current)1.5A
PD (Total Dissipation at Tamb = 25°C)2W
hFE (DC Current Gain)100
VCE(sat) (Collector-Emitter Saturation Voltage)0.5V
fT (Transition Frequency)150MHz
Tstg (Storage Temperature)-65 to 150°C
Tj (Max. Operating Junction Temperature)150°C

Key Features

  • Automotive-grade, AEC-Q101 qualified for reliability in harsh environments.
  • Surface mount package (SOT-223-3) for easy integration.
  • High power handling with a total dissipation of 2W.
  • High collector-emitter breakdown voltage of 80V.
  • High collector current of 1A and peak collector current of 1.5A.
  • Low collector-emitter saturation voltage of 0.5V.
  • High DC current gain of 100.
  • High transition frequency of 150MHz.

Applications

  • MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS
  • OUTPUT STAGE FOR AUDIO AMPLIFIERS CIRCUITS
  • AUTOMOTIVE POST-VOLTAGE REGULATION
  • Automotive electronics
  • Industrial power supplies
  • Motor control circuits
  • Switching circuits

Q & A

  1. What is the polarity of the BCP5316TA transistor? The BCP5316TA is a PNP transistor.
  2. What is the maximum collector-emitter voltage (VCEO) of the BCP5316TA? The maximum VCEO is 80V.
  3. What is the continuous collector current (IC) of the BCP5316TA? The continuous collector current is 1A.
  4. What is the peak collector current (ICM) of the BCP5316TA? The peak collector current is 1.5A.
  5. What is the total dissipation (PD) of the BCP5316TA at 25°C? The total dissipation is 2W.
  6. What is the DC current gain (hFE) of the BCP5316TA? The DC current gain is 100.
  7. What is the collector-emitter saturation voltage (VCE(sat)) of the BCP5316TA? The collector-emitter saturation voltage is 0.5V.
  8. What is the transition frequency (fT) of the BCP5316TA? The transition frequency is 150MHz.
  9. What are the storage and operating temperature ranges for the BCP5316TA? The storage temperature range is -65 to 150°C, and the maximum operating junction temperature is 150°C.
  10. Is the BCP5316TA suitable for automotive applications? Yes, it is AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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Similar Products

Part Number BCP5316TA BCP5616TA BCP5516TA BCP5416TA BCP5116TA BCP5216TA BCP5310TA BCP5316QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Active Active
Transistor Type PNP NPN NPN NPN PNP PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 60 V 45 V 45 V 60 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

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