MMBTA63-7
  • Share:

Diodes Incorporated MMBTA63-7

Manufacturer No:
MMBTA63-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS PNP DARL 30V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA63-7 is a PNP Darlington bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is designed for use in a variety of applications requiring high current gain and low noise. It is packaged in a surface-mount SOT-23-3 format, making it suitable for compact and efficient circuit designs.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCES-30Vdc
Collector-Base VoltageVCBO-30Vdc
Emitter-Base VoltageVEBO-10Vdc
Collector Current - ContinuousIC-500mAdc
Thermal Resistance, Junction-to-AmbientRJA556°C/W
Junction and Storage TemperatureTJ, Tstg-55 to +150°C
Current Gain (hFE) at IC = -10 mA, VCE = -5 VhFE5,000 to 10,000
Collector-Emitter Saturation Voltage at IC = -100 mA, IB = -0.1 mAVCE(sat)-1.5Vdc
Base-Emitter On Voltage at IC = -100 mA, VCE = -5 VVBE(on)-2.0Vdc
Current-Gain Bandwidth Product at f = 100 MHzfT125MHz

Key Features

  • PNP Darlington transistor with high current gain, suitable for applications requiring low noise and high amplification.
  • Packaged in SOT-23-3 surface-mount format, ideal for compact designs.
  • Maximum collector-emitter voltage of -30 V and collector current of -500 mA.
  • Thermally efficient with a total device dissipation of up to 300 mW on an alumina substrate.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Applications

The MMBTA63-7 is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Power amplifiers: Its high current gain and low noise characteristics make it ideal for power amplifier circuits.
  • Switching circuits: The transistor's ability to handle high currents and voltages makes it suitable for switching applications.
  • Audio equipment: It can be used in audio amplifiers and other audio equipment due to its low noise and high gain.
  • General-purpose amplification: It is a reliable choice for general-purpose amplification needs in various electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBTA63-7?
    The maximum collector-emitter voltage (VCES) is -30 Vdc.
  2. What is the maximum collector current of the MMBTA63-7?
    The maximum collector current (IC) is -500 mA.
  3. What is the thermal resistance, junction-to-ambient, of the MMBTA63-7?
    The thermal resistance, junction-to-ambient (RJA), is 556 °C/W.
  4. Is the MMBTA63-7 RoHS compliant?
    Yes, the MMBTA63-7 is Pb-free, halogen-free, and RoHS compliant.
  5. What is the current gain (hFE) of the MMBTA63-7 at IC = -10 mA and VCE = -5 V?
    The current gain (hFE) is between 5,000 to 10,000.
  6. What is the collector-emitter saturation voltage of the MMBTA63-7?
    The collector-emitter saturation voltage (VCE(sat)) is -1.5 Vdc at IC = -100 mA and IB = -0.1 mA.
  7. What is the base-emitter on voltage of the MMBTA63-7?
    The base-emitter on voltage (VBE(on)) is -2.0 Vdc at IC = -100 mA and VCE = -5 V.
  8. What is the current-gain bandwidth product of the MMBTA63-7?
    The current-gain bandwidth product (fT) is 125 MHz.
  9. Is the MMBTA63-7 suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  10. What package type is the MMBTA63-7 available in?
    The MMBTA63-7 is available in a SOT-23-3 surface-mount package.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
Power - Max:300 mW
Frequency - Transition:125MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.39
841

Please send RFQ , we will respond immediately.

Same Series
MMBTA64-7-F
MMBTA64-7-F
TRANS PNP DARL 30V 0.5A SOT23-3
MMBTA63-7
MMBTA63-7
TRANS PNP DARL 30V 0.5A SOT23-3

Similar Products

Part Number MMBTA63-7 MMBTA64-7 MMBTA13-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key
Transistor Type PNP - Darlington - NPN - Darlington
Current - Collector (Ic) (Max) 500 mA - 300 mA
Voltage - Collector Emitter Breakdown (Max) 30 V - 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA - 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V - 10000 @ 100mA, 5V
Power - Max 300 mW - 300 mW
Frequency - Transition 125MHz - 125MHz
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 - SOT-23-3

Related Product By Categories

BCP56-10
BCP56-10
Diotec Semiconductor
TRANS NPN 80V 1A SOT223
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BSV52LT1G
BSV52LT1G
onsemi
TRANS NPN 12V 0.1A SOT23-3
BC857AW_R1_00001
BC857AW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
BC857CQCZ
BC857CQCZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1412D-3
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
BC860CWH6327XTSA1
BC860CWH6327XTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
BC857B/DG/B3,215
BC857B/DG/B3,215
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB

Related Product By Brand

BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAV23AQ-7-F
BAV23AQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAT760Q-7
BAT760Q-7
Diodes Incorporated
DIODE SCHOTTKY 30V 1A SOD323
BAS521LP-7B
BAS521LP-7B
Diodes Incorporated
DIODE GEN PURP 325V 400MA 2DFN
BZX84C27-7-G
BZX84C27-7-G
Diodes Incorporated
DIODE ZENER
BC847BVNQ-7
BC847BVNQ-7
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT56
BC846AW-7-F
BC846AW-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT323
BCP5316QTA
BCP5316QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BCV46TC
BCV46TC
Diodes Incorporated
TRANS PNP DARL 60V 0.5A SOT23-3
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE
74LVC08AT14-13
74LVC08AT14-13
Diodes Incorporated
IC GATE AND 4CH 2-INP 14TSSOP
74LVC1G08FW4-7
74LVC1G08FW4-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1010-6