MMBT2222A-7
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Diodes Incorporated MMBT2222A-7

Manufacturer No:
MMBT2222A-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222A-7-F is a high-performance NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is part of the MMBT2222A series and is designed for a wide range of applications, particularly in high-frequency switching and amplifier circuits. It is packaged in a compact SOT-23-3 surface mount package, making it ideal for space-constrained designs. The transistor is AEC-Q101 qualified, ensuring its reliability and robust performance in automotive and other demanding environments.

Key Specifications

Attribute Value
Polarity NPN
Type Small Signal
Collector-Emitter Breakdown Voltage (Max) 40 V
Collector Current (Max) 600 mA
Power Dissipation (Max) 350 mW
Collector-Base Voltage (Max) 75 V
Collector-Emitter Saturation Voltage (Max) 1 V @ 50mA, 500mA
Emitter-Base Voltage (Max) 6 V
DC Current Gain (Min) 35 (typical), 100 @ 150 mA, 10 V
Transition Frequency 300 MHz
Operating Temperature Range -55°C to +150°C
Rise Time 25 ns
Fall Time 60 ns
Input Capacitance 25 pF
Moisture Sensitivity Level 1
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Epitaxial planar die construction
  • Complementary PNP type available (MMBT2907A)
  • Ideal for low power amplification and switching
  • Lead, halogen, and antimony free, RoHS compliant
  • AEC-Q101 qualified for high reliability in automotive applications
  • Fast switching speed with rise and fall times of 25 ns and 60 ns respectively
  • Low collector-emitter saturation voltage
  • Wide operating temperature range of -55°C to +150°C

Applications

  • High-frequency switching and amplifier circuits
  • Automotive electronics
  • Industrial control systems
  • Power supplies
  • Consumer electronics

Q & A

  1. What is the polarity of the MMBT2222A-7-F transistor?

    The MMBT2222A-7-F is an NPN bipolar junction transistor.

  2. What is the maximum collector-emitter breakdown voltage of the MMBT2222A-7-F?

    The maximum collector-emitter breakdown voltage is 40 V.

  3. What is the maximum collector current of the MMBT2222A-7-F?

    The maximum collector current is 600 mA.

  4. What is the power dissipation of the MMBT2222A-7-F?

    The total power dissipation is 350 mW.

  5. What is the operating temperature range of the MMBT2222A-7-F?

    The operating temperature range is -55°C to +150°C.

  6. Is the MMBT2222A-7-F RoHS compliant?

    Yes, the MMBT2222A-7-F is RoHS compliant and lead, halogen, and antimony free.

  7. What is the transition frequency of the MMBT2222A-7-F?

    The transition frequency is 300 MHz.

  8. What package style does the MMBT2222A-7-F come in?

    The MMBT2222A-7-F comes in a SOT-23 (SC-59, TO-236) package.

  9. Is the MMBT2222A-7-F suitable for automotive applications?

    Yes, the MMBT2222A-7-F is AEC-Q101 qualified, making it suitable for automotive applications.

  10. What are some common applications of the MMBT2222A-7-F?

    Common applications include high-frequency switching and amplifier circuits, automotive electronics, industrial control systems, power supplies, and consumer electronics.[

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number MMBT2222A-7 MMBT2222A-G MMBT2222AT-7
Manufacturer Diodes Incorporated Comchip Technology Diodes Incorporated
Product Status Obsolete Active Obsolete
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10mV 100 @ 150mA, 10V
Power - Max 310 mW 300 mW 150 mW
Frequency - Transition 300MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523
Supplier Device Package SOT-23-3 SOT-23-3 SOT-523

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