MMBT2222A-G
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Comchip Technology MMBT2222A-G

Manufacturer No:
MMBT2222A-G
Manufacturer:
Comchip Technology
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222A-G is a high-performance NPN small signal transistor manufactured by Comchip Technology. This transistor is designed for low power amplification and switching applications. It features an epitaxial planar die construction, which enhances its electrical characteristics and reliability. The MMBT2222A-G is packaged in a SOT-23-3 case, making it suitable for surface mount applications. It is fully RoHS compliant, halogen- and antimony-free, and meets various environmental and safety standards.

Key Specifications

ParameterValueUnit
ManufacturerComchip Technology
Transistor TypeNPN
Collector-Emitter Voltage (Vce)40V
Collector Current (Ic)600mA
Power Dissipation (Pd)300mW
Transition Frequency (ft)300MHz
Operating Temperature Range (TJ)-55°C to 150°C°C
Collector-Base Breakdown Voltage (Vcbo)75V
Emitter-Base Breakdown Voltage (Vebo)6.0V
DC Current Gain (hFE) @ Ic, Vce100 @ 150mA, 10mV
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Package / CaseSOT-23-3, TO-236-3, SC-59
RoHS ComplianceYes

Key Features

  • Epitaxial planar die construction for improved electrical characteristics.
  • Low saturation voltage (Vce(sat) < 300mV @ 150mA).
  • Complementary PNP type: MMBT2907A.
  • Ideal for low power amplification and switching applications.
  • Totally lead-free and fully RoHS compliant, halogen- and antimony-free.
  • SOT-23-3 package suitable for surface mount applications.
  • High collector current and transition frequency.
  • Wide operating temperature range (-55°C to 150°C).

Applications

The MMBT2222A-G transistor is versatile and can be used in a variety of applications, including:

  • Low power amplification circuits.
  • Switching circuits.
  • Consumer electronics.
  • Automotive electronics (specific models are AEC-Q101 qualified).
  • Medical devices.
  • Energy and metering applications.

Q & A

  1. What is the maximum collector current of the MMBT2222A-G transistor?
    The maximum collector current is 600 mA.
  2. What is the operating temperature range of the MMBT2222A-G?
    The operating temperature range is -55°C to 150°C.
  3. Is the MMBT2222A-G RoHS compliant?
    Yes, the MMBT2222A-G is fully RoHS compliant.
  4. What is the transition frequency of the MMBT2222A-G?
    The transition frequency is 300 MHz.
  5. What is the typical application of the MMBT2222A-G transistor?
    The MMBT2222A-G is typically used in low power amplification and switching applications.
  6. What is the package type of the MMBT2222A-G?
    The package type is SOT-23-3.
  7. Is the MMBT2222A-G suitable for automotive applications?
    Yes, specific models of the MMBT2222A-G are AEC-Q101 qualified and suitable for automotive applications.
  8. What is the collector-emitter breakdown voltage of the MMBT2222A-G?
    The collector-emitter breakdown voltage is 40 V.
  9. What is the emitter-base breakdown voltage of the MMBT2222A-G?
    The emitter-base breakdown voltage is 6.0 V.
  10. What is the power dissipation of the MMBT2222A-G?
    The power dissipation is 300 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10mV
Power - Max:300 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number MMBT2222A-G MMBT2222A-7
Manufacturer Comchip Technology Diodes Incorporated
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10mV 100 @ 150mA, 10V
Power - Max 300 mW 310 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3

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