BCP56H115
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NXP USA Inc. BCP56H115

Manufacturer No:
BCP56H115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP56H115 is a high-current NPN silicon epitaxial transistor produced by NXP USA Inc. This component is part of the BCP56 series, known for its robust performance and reliability in various electronic applications. The transistor is designed to handle high current and voltage requirements, making it suitable for a range of industrial and automotive uses.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)80Vdc
Collector-Base Voltage (VCBO)100Vdc
Emitter-Base Voltage (VEBO)5Vdc
Collector Current (IC)1Adc
Collector Current - Peak (ICM)2Adc
Total Power Dissipation @ TA = 25°C (PD)1.5 W
Operating and Storage Temperature Range (TJ, Tstg)-65 to 150°C
Collector-Base Breakdown Voltage (V(BR)CBO)100Vdc
Collector-Emitter Breakdown Voltage (V(BR)CEO)80Vdc
Emitter-Base Breakdown Voltage (V(BR)EBO)5.0Vdc
DC Current Gain (hFE) at IC = 150 mA, VCE = 2.0 V25 - 250
Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 500 mA, IB = 50 mA0.5Vdc

Key Features

  • High Current Handling: The BCP56H115 can handle high collector currents, making it suitable for applications requiring robust current handling.
  • High Voltage Ratings: With collector-emitter and collector-base voltage ratings of 80 V and 100 V respectively, this transistor is designed for high-voltage applications.
  • Low Saturation Voltage: The transistor features a low collector-emitter saturation voltage, which is beneficial for reducing power losses in switching applications.
  • Wide Operating Temperature Range: The component can operate over a wide temperature range from -65°C to 150°C, making it versatile for various environmental conditions.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: This ensures the component meets current environmental and safety standards.

Applications

The BCP56H115 is widely used in various applications including:

  • Automotive Systems: For power management, motor control, and other high-current applications.
  • Industrial Control Systems: In power supplies, motor drives, and other industrial automation equipment.
  • Power Electronics: In switching power supplies, DC-DC converters, and other high-power electronic devices.
  • Consumer Electronics: In audio amplifiers, power amplifiers, and other high-current consumer electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP56H115 transistor?
    The maximum collector-emitter voltage (VCEO) is 80 Vdc.
  2. What is the peak collector current rating of the BCP56H115?
    The peak collector current (ICM) is 2 Adc.
  3. Is the BCP56H115 RoHS compliant?
    Yes, the BCP56H115 is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  4. What is the operating temperature range of the BCP56H115?
    The operating and storage temperature range is -65°C to 150°C.
  5. What are the typical applications of the BCP56H115 transistor?
    The transistor is used in automotive systems, industrial control systems, power electronics, and consumer electronics.
  6. What is the collector-emitter saturation voltage of the BCP56H115?
    The collector-emitter saturation voltage (VCE(sat)) at IC = 500 mA, IB = 50 mA is 0.5 Vdc.
  7. Is the BCP56H115 suitable for high-voltage applications?
    Yes, with its high voltage ratings, it is suitable for high-voltage applications.
  8. What is the DC current gain (hFE) of the BCP56H115?
    The DC current gain (hFE) at IC = 150 mA, VCE = 2.0 V ranges from 25 to 250.
  9. Can the BCP56H115 handle high current?
    Yes, the transistor is designed to handle high collector currents.
  10. Is the BCP56H115 used in power supplies?
    Yes, it is used in switching power supplies and other power electronic devices.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BCP56H115 BCP56,115 BCP56H,115
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - NPN -
Current - Collector (Ic) (Max) - 1 A -
Voltage - Collector Emitter Breakdown (Max) - 80 V -
Vce Saturation (Max) @ Ib, Ic - 500mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) - 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - 63 @ 150mA, 2V -
Power - Max - 960 mW -
Frequency - Transition - 180MHz -
Operating Temperature - 150°C (TJ) -
Mounting Type - Surface Mount -
Package / Case - TO-261-4, TO-261AA -
Supplier Device Package - SOT-223 -

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