BCP56H115
  • Share:

NXP USA Inc. BCP56H115

Manufacturer No:
BCP56H115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP56H115 is a high-current NPN silicon epitaxial transistor produced by NXP USA Inc. This component is part of the BCP56 series, known for its robust performance and reliability in various electronic applications. The transistor is designed to handle high current and voltage requirements, making it suitable for a range of industrial and automotive uses.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)80Vdc
Collector-Base Voltage (VCBO)100Vdc
Emitter-Base Voltage (VEBO)5Vdc
Collector Current (IC)1Adc
Collector Current - Peak (ICM)2Adc
Total Power Dissipation @ TA = 25°C (PD)1.5 W
Operating and Storage Temperature Range (TJ, Tstg)-65 to 150°C
Collector-Base Breakdown Voltage (V(BR)CBO)100Vdc
Collector-Emitter Breakdown Voltage (V(BR)CEO)80Vdc
Emitter-Base Breakdown Voltage (V(BR)EBO)5.0Vdc
DC Current Gain (hFE) at IC = 150 mA, VCE = 2.0 V25 - 250
Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 500 mA, IB = 50 mA0.5Vdc

Key Features

  • High Current Handling: The BCP56H115 can handle high collector currents, making it suitable for applications requiring robust current handling.
  • High Voltage Ratings: With collector-emitter and collector-base voltage ratings of 80 V and 100 V respectively, this transistor is designed for high-voltage applications.
  • Low Saturation Voltage: The transistor features a low collector-emitter saturation voltage, which is beneficial for reducing power losses in switching applications.
  • Wide Operating Temperature Range: The component can operate over a wide temperature range from -65°C to 150°C, making it versatile for various environmental conditions.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: This ensures the component meets current environmental and safety standards.

Applications

The BCP56H115 is widely used in various applications including:

  • Automotive Systems: For power management, motor control, and other high-current applications.
  • Industrial Control Systems: In power supplies, motor drives, and other industrial automation equipment.
  • Power Electronics: In switching power supplies, DC-DC converters, and other high-power electronic devices.
  • Consumer Electronics: In audio amplifiers, power amplifiers, and other high-current consumer electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP56H115 transistor?
    The maximum collector-emitter voltage (VCEO) is 80 Vdc.
  2. What is the peak collector current rating of the BCP56H115?
    The peak collector current (ICM) is 2 Adc.
  3. Is the BCP56H115 RoHS compliant?
    Yes, the BCP56H115 is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  4. What is the operating temperature range of the BCP56H115?
    The operating and storage temperature range is -65°C to 150°C.
  5. What are the typical applications of the BCP56H115 transistor?
    The transistor is used in automotive systems, industrial control systems, power electronics, and consumer electronics.
  6. What is the collector-emitter saturation voltage of the BCP56H115?
    The collector-emitter saturation voltage (VCE(sat)) at IC = 500 mA, IB = 50 mA is 0.5 Vdc.
  7. Is the BCP56H115 suitable for high-voltage applications?
    Yes, with its high voltage ratings, it is suitable for high-voltage applications.
  8. What is the DC current gain (hFE) of the BCP56H115?
    The DC current gain (hFE) at IC = 150 mA, VCE = 2.0 V ranges from 25 to 250.
  9. Can the BCP56H115 handle high current?
    Yes, the transistor is designed to handle high collector currents.
  10. Is the BCP56H115 used in power supplies?
    Yes, it is used in switching power supplies and other power electronic devices.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
292

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number BCP56H115 BCP56,115 BCP56H,115
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - NPN -
Current - Collector (Ic) (Max) - 1 A -
Voltage - Collector Emitter Breakdown (Max) - 80 V -
Vce Saturation (Max) @ Ib, Ic - 500mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) - 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - 63 @ 150mA, 2V -
Power - Max - 960 mW -
Frequency - Transition - 180MHz -
Operating Temperature - 150°C (TJ) -
Mounting Type - Surface Mount -
Package / Case - TO-261-4, TO-261AA -
Supplier Device Package - SOT-223 -

Related Product By Categories

BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BCV46QTA
BCV46QTA
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
BC807-25W/MIX
BC807-25W/MIX
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323
SS8050-D-AP
SS8050-D-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
MKE04Z128VLH4
MKE04Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MC9S08PL4CTG
MC9S08PL4CTG
NXP USA Inc.
IC MCU 8BIT 4KB FLASH 16TSSOP
SPC5777CDK3MMO3
SPC5777CDK3MMO3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 516MAPBGA
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
P1012NSE2DFB
P1012NSE2DFB
NXP USA Inc.
IC MPU Q OR IQ 800MHZ 689TEBGA
SC16C554DBIA68,518
SC16C554DBIA68,518
NXP USA Inc.
IC UART QUAD 68PLCC
SA5212AD,602
SA5212AD,602
NXP USA Inc.
IC TRANSIMPEDANCE 1 CIRCUIT 8SO
N74F07D,602
N74F07D,602
NXP USA Inc.
IC BUFFER NON-INVERT 5.5V 14SO
HEF4093BT/C4118
HEF4093BT/C4118
NXP USA Inc.
NAND GATE
MMDS09254HT1
MMDS09254HT1
NXP USA Inc.
ADVANCED DOHERTY ALIGNMENT MODUL
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX