BCP56H115
  • Share:

NXP USA Inc. BCP56H115

Manufacturer No:
BCP56H115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP56H115 is a high-current NPN silicon epitaxial transistor produced by NXP USA Inc. This component is part of the BCP56 series, known for its robust performance and reliability in various electronic applications. The transistor is designed to handle high current and voltage requirements, making it suitable for a range of industrial and automotive uses.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)80Vdc
Collector-Base Voltage (VCBO)100Vdc
Emitter-Base Voltage (VEBO)5Vdc
Collector Current (IC)1Adc
Collector Current - Peak (ICM)2Adc
Total Power Dissipation @ TA = 25°C (PD)1.5 W
Operating and Storage Temperature Range (TJ, Tstg)-65 to 150°C
Collector-Base Breakdown Voltage (V(BR)CBO)100Vdc
Collector-Emitter Breakdown Voltage (V(BR)CEO)80Vdc
Emitter-Base Breakdown Voltage (V(BR)EBO)5.0Vdc
DC Current Gain (hFE) at IC = 150 mA, VCE = 2.0 V25 - 250
Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 500 mA, IB = 50 mA0.5Vdc

Key Features

  • High Current Handling: The BCP56H115 can handle high collector currents, making it suitable for applications requiring robust current handling.
  • High Voltage Ratings: With collector-emitter and collector-base voltage ratings of 80 V and 100 V respectively, this transistor is designed for high-voltage applications.
  • Low Saturation Voltage: The transistor features a low collector-emitter saturation voltage, which is beneficial for reducing power losses in switching applications.
  • Wide Operating Temperature Range: The component can operate over a wide temperature range from -65°C to 150°C, making it versatile for various environmental conditions.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: This ensures the component meets current environmental and safety standards.

Applications

The BCP56H115 is widely used in various applications including:

  • Automotive Systems: For power management, motor control, and other high-current applications.
  • Industrial Control Systems: In power supplies, motor drives, and other industrial automation equipment.
  • Power Electronics: In switching power supplies, DC-DC converters, and other high-power electronic devices.
  • Consumer Electronics: In audio amplifiers, power amplifiers, and other high-current consumer electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP56H115 transistor?
    The maximum collector-emitter voltage (VCEO) is 80 Vdc.
  2. What is the peak collector current rating of the BCP56H115?
    The peak collector current (ICM) is 2 Adc.
  3. Is the BCP56H115 RoHS compliant?
    Yes, the BCP56H115 is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  4. What is the operating temperature range of the BCP56H115?
    The operating and storage temperature range is -65°C to 150°C.
  5. What are the typical applications of the BCP56H115 transistor?
    The transistor is used in automotive systems, industrial control systems, power electronics, and consumer electronics.
  6. What is the collector-emitter saturation voltage of the BCP56H115?
    The collector-emitter saturation voltage (VCE(sat)) at IC = 500 mA, IB = 50 mA is 0.5 Vdc.
  7. Is the BCP56H115 suitable for high-voltage applications?
    Yes, with its high voltage ratings, it is suitable for high-voltage applications.
  8. What is the DC current gain (hFE) of the BCP56H115?
    The DC current gain (hFE) at IC = 150 mA, VCE = 2.0 V ranges from 25 to 250.
  9. Can the BCP56H115 handle high current?
    Yes, the transistor is designed to handle high collector currents.
  10. Is the BCP56H115 used in power supplies?
    Yes, it is used in switching power supplies and other power electronic devices.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
292

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BCP56H115 BCP56,115 BCP56H,115
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - NPN -
Current - Collector (Ic) (Max) - 1 A -
Voltage - Collector Emitter Breakdown (Max) - 80 V -
Vce Saturation (Max) @ Ib, Ic - 500mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) - 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - 63 @ 150mA, 2V -
Power - Max - 960 mW -
Frequency - Transition - 180MHz -
Operating Temperature - 150°C (TJ) -
Mounting Type - Surface Mount -
Package / Case - TO-261-4, TO-261AA -
Supplier Device Package - SOT-223 -

Related Product By Categories

PMBTA45,215
PMBTA45,215
Nexperia USA Inc.
TRANS NPN 500V 0.15A TO236AB
BC857W,115
BC857W,115
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
BC846BLT3G
BC846BLT3G
onsemi
TRANS NPN 65V 0.1A SOT23-3
BC817K-40HR
BC817K-40HR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
MJE340STU
MJE340STU
onsemi
TRANS NPN 300V 0.5A TO126-3
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
BB178,335
BB178,335
NXP USA Inc.
DIODE VHF VAR CAP 32V SOD523
BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
MKE04Z64VLH4
MKE04Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
S9S12G48ACLF
S9S12G48ACLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MCZ33904C5EKR2
MCZ33904C5EKR2
NXP USA Inc.
IC INTERFACE SPECIALIZED 32SOIC
TDA8932T/N1,118
TDA8932T/N1,118
NXP USA Inc.
IC AMP CLSS D MONO/STER 55W 32SO
74LVC1G17GV-Q100125
74LVC1G17GV-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74LVC2G32DC-Q100125
74LVC2G32DC-Q100125
NXP USA Inc.
OR GATE, LVC/LCX/Z SERIES
NX5P3001UKZ
NX5P3001UKZ
NXP USA Inc.
IC PWR SWITCH N-CHAN 1:1 12WLCSP
BGU6005115
BGU6005115
NXP USA Inc.
LOW NOISE AMPLIFIER MMIC