Overview
The BC857AW_R1_00001 is a PNP general-purpose transistor manufactured by Panjit International Inc. This transistor is designed for a wide range of applications requiring low noise and high current gain. It is packaged in a small SOT323 (SC-70) surface-mount device (SMD) plastic package, making it suitable for compact and high-density electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Panjit International Inc. |
| Package | SOT323 (SC-70) |
| Collector Current (Ic) Max | 100 mA |
| DC Current Gain (hFE) Min @ Ic, Vce | 110 @ 2mA, 5V |
| Collector-Emitter Voltage (Vce) Max | 45 V |
| Collector Cutoff Current (ICBO) Max | 15 nA |
| Transition Frequency | 200 MHz |
| Operating Temperature Range | -55°C to 150°C (TJ) |
Key Features
- Compact Package: The BC857AW_R1_00001 is packaged in a small SOT323 (SC-70) surface-mount device (SMD) plastic package, ideal for space-constrained designs.
- High Current Gain: With a minimum DC current gain (hFE) of 110 at 2mA and 5V, this transistor offers high amplification capabilities.
- Low Noise: Suitable for applications requiring low noise operation.
- High Transition Frequency: A transition frequency of 200 MHz allows for fast switching and high-speed applications.
- Wide Operating Temperature Range: Operates reliably from -55°C to 150°C (TJ), making it versatile for various environmental conditions.
Applications
- General-Purpose Amplification: Suitable for a wide range of amplification tasks in electronic circuits.
- Switching Circuits: The high transition frequency makes it ideal for high-speed switching applications.
- Audio and Signal Processing: Low noise characteristics make it suitable for audio and signal processing circuits.
- Automotive and Industrial Electronics: The wide operating temperature range and robust specifications make it suitable for use in automotive and industrial electronics.
Q & A
- What is the package type of the BC857AW_R1_00001 transistor?
The BC857AW_R1_00001 is packaged in a SOT323 (SC-70) surface-mount device (SMD) plastic package.
- What is the maximum collector current (Ic) of the BC857AW_R1_00001 transistor?
The maximum collector current (Ic) is 100 mA.
- What is the minimum DC current gain (hFE) of the BC857AW_R1_00001 transistor?
The minimum DC current gain (hFE) is 110 at 2mA and 5V.
- What is the maximum collector-emitter voltage (Vce) of the BC857AW_R1_00001 transistor?
The maximum collector-emitter voltage (Vce) is 45 V.
- What is the collector cutoff current (ICBO) of the BC857AW_R1_00001 transistor?
The collector cutoff current (ICBO) is 15 nA.
- What is the transition frequency of the BC857AW_R1_00001 transistor?
The transition frequency is 200 MHz.
- What is the operating temperature range of the BC857AW_R1_00001 transistor?
The operating temperature range is from -55°C to 150°C (TJ).
- Is the BC857AW_R1_00001 suitable for high-speed applications?
- Can the BC857AW_R1_00001 be used in automotive electronics?
- What are some common applications of the BC857AW_R1_00001 transistor?
