BCP69E6327
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Infineon Technologies BCP69E6327

Manufacturer No:
BCP69E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
POWER BIPOLAR TRANSISTOR
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP69E6327 is a PNP medium power bipolar transistor manufactured by Infineon Technologies. This transistor is part of the BCP69 series, known for its high current handling and versatility in various applications. It is packaged in a SOT223 (SC-73) surface-mounted package, which includes a collector pad for efficient heat transfer.

Key Specifications

ParameterMin.Max.Unit
VCEO (Collector-Emitter Voltage)-20V
IC (Collector Current, DC)-1A
ICM (Peak Collector Current)-2A
hFE (DC Current Gain)160375-
VCBO (Collector-Base Voltage, open emitter)-32V
VEBO (Emitter-Base Voltage, open collector)-5V
Ptot (Total Power Dissipation)-1.4W
Tstg (Storage Temperature)-65150°C
Tj (Junction Temperature)-150°C
Tamb (Operating Ambient Temperature)-65150°C

Key Features

  • High current handling up to 1 A
  • Three current gain selections (BCP69, BCP69-16, BCP69-25)
  • Total power dissipation of up to 1.4 W
  • Collector-emitter saturation voltage (VCEsat) of -500 mV
  • Transition frequency (fT) of 40 to 140 MHz
  • Lead-free and RoHS compliant

Applications

  • Linear voltage regulators (LDO)
  • High side switches
  • Supply line switches
  • MOSFET drivers
  • Audio pre-amplifiers

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BCP69E6327? The collector-emitter voltage (VCEO) is up to 20 V.
  2. What is the maximum collector current (IC) of the BCP69E6327? The maximum collector current (IC) is 1 A.
  3. What is the total power dissipation (Ptot) of the BCP69E6327? The total power dissipation (Ptot) is up to 1.4 W.
  4. Is the BCP69E6327 RoHS compliant? Yes, the BCP69E6327 is lead-free and RoHS compliant.
  5. What are the typical applications of the BCP69E6327? Typical applications include linear voltage regulators, high side switches, supply line switches, MOSFET drivers, and audio pre-amplifiers.
  6. What is the package type of the BCP69E6327? The BCP69E6327 is packaged in a SOT223 (SC-73) surface-mounted package.
  7. What is the junction temperature (Tj) of the BCP69E6327? The junction temperature (Tj) is up to 150 °C.
  8. What is the storage temperature range for the BCP69E6327? The storage temperature range is from -65 °C to 150 °C.
  9. What is the transition frequency (fT) of the BCP69E6327? The transition frequency (fT) is between 40 MHz and 140 MHz.
  10. What is the collector-emitter saturation voltage (VCEsat) of the BCP69E6327? The collector-emitter saturation voltage (VCEsat) is -500 mV.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BCP69E6327 BCP68E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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