BSS123 E6433
  • Share:

Infineon Technologies BSS123 E6433

Manufacturer No:
BSS123 E6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123 E6433 is a surface-mountable N-channel MOSFET produced by Infineon Technologies. It is housed in a PG-SOT23 package, making it suitable for a variety of applications where space is limited. This MOSFET is designed to handle a maximum drain-source voltage of 100 V and is known for its reliability and versatility.

Key Specifications

Parameter Unit Max Typ Min
Drain-Source Voltage (VDSS) V 100
Gate-Source Voltage (VGSS) V ±20
Continuous Drain Current (ID) A 0.17
Pulsed Drain Current (ID) A 0.68
Maximum Power Dissipation (PD) W 0.36
Input Capacitance (Ciss) pF 73
Output Capacitance (Coss) pF 7
Reverse Transfer Capacitance (Crss) pF 3.4
Turn-On Delay Time (td(on)) ns 3.4 1.7
Turn-On Rise Time (tr) ns 18 9
Turn-Off Delay Time (td(off)) ns 31 17
Turn-Off Fall Time (tf) ns 5 2.4

Key Features

  • N-Channel MOSFET: The BSS123 E6433 is an N-channel enhancement mode MOSFET, suitable for a wide range of switching and power management applications.
  • High Voltage Handling: It can handle a maximum drain-source voltage of 100 V, making it robust for various high-voltage applications.
  • Low On-Resistance: The MOSFET has a low on-resistance, which minimizes power losses and enhances efficiency in the circuit.
  • Compact Package: Housed in a PG-SOT23 package, it is ideal for space-constrained designs.
  • Fast Switching Times: With turn-on and turn-off times in the range of nanoseconds, it is suitable for high-frequency switching applications.

Applications

  • Power Management: The BSS123 E6433 can be used in power management circuits, including DC-DC converters, voltage regulators, and power switches.
  • Motor Control: It is suitable for motor control applications due to its high current handling and fast switching times.
  • Audio Amplifiers: The MOSFET can be used in audio amplifier circuits where high fidelity and low distortion are required.
  • General Purpose Switching: It can be used as a general-purpose switch in various electronic circuits where high reliability and low on-resistance are needed.

Q & A

  1. What is the maximum drain-source voltage of the BSS123 E6433?

    The maximum drain-source voltage is 100 V.

  2. What is the package type of the BSS123 E6433?

    The BSS123 E6433 is housed in a PG-SOT23 package.

  3. What is the continuous drain current rating of the BSS123 E6433?

    The continuous drain current rating is 0.17 A.

  4. Is the BSS123 E6433 still in production?

    No, the BSS123 E6433 is obsolete and no longer manufactured. It is not recommended for new designs.

  5. What are the typical applications of the BSS123 E6433?

    It is used in power management, motor control, audio amplifiers, and general-purpose switching applications.

  6. What are the turn-on and turn-off times of the BSS123 E6433?

    The turn-on delay time is typically 1.7 ns to 3.4 ns, and the turn-off delay time is typically 17 ns to 31 ns.

  7. What is the maximum power dissipation of the BSS123 E6433?

    The maximum power dissipation is 0.36 W.

  8. What is the input capacitance of the BSS123 E6433?

    The input capacitance is 73 pF.

  9. Can the BSS123 E6433 be used in high-frequency applications?
  10. Where can I find substitutes for the BSS123 E6433?

    You can find substitutes on websites like Digi-Key, Mouser, or by contacting the manufacturer for recommendations.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
534

Please send RFQ , we will respond immediately.

Same Series
BSS123 E6433
BSS123 E6433
MOSFET N-CH 100V 170MA SOT23-3
BSS123L7874XT
BSS123L7874XT
MOSFET N-CH 100V 170MA SOT23-3
BSS123L6327HTSA1
BSS123L6327HTSA1
MOSFET N-CH 100V 170MA SOT23-3
BSS123L6433HTMA1
BSS123L6433HTMA1
MOSFET N-CH 100V 170MA SOT23-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK

Related Product By Brand

BTS70302EPADAUGHBRDTOBO1
BTS70302EPADAUGHBRDTOBO1
Infineon Technologies
PROFET +2 12V BTS7030-2EPA DAUGH
MMBTA56LT1HTSA1
MMBTA56LT1HTSA1
Infineon Technologies
TRANS PNP 80V 0.5A SOT23
BC80740B5003XT
BC80740B5003XT
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BC 846B E6327
BC 846B E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
IRFR024NTRPBF
IRFR024NTRPBF
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
IPW65R080CFDFKSA1
IPW65R080CFDFKSA1
Infineon Technologies
MOSFET N-CH 700V 43.3A TO247-3
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
IR2104STRPBF
IR2104STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
BTS711L1NT
BTS711L1NT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
CY7C53150-20AXIT
CY7C53150-20AXIT
Infineon Technologies
IC PROCESSOR NEURON 64LQFP
FM24CL16B-GTR
FM24CL16B-GTR
Infineon Technologies
IC FRAM 16KBIT I2C 1MHZ 8SOIC