Overview
The FDMC2523P is a P-Channel MOSFET enhancement mode power field effect transistor produced by onsemi. This device is manufactured using onsemi's proprietary planar stripe, DMOS technology, which is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. The FDMC2523P is well-suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | -150 | V |
| Gate to Source Voltage (VGS) | ±30 | V |
| Drain Current (ID) | -3 A (Continuous at TC = 25°C) | A |
| Drain Current (ID) | -1.8 A (Continuous at TC = 100°C) | A |
| On-State Resistance (RDS(on)) | 1.5 Ω at VGS = -10 V, ID = -1.5 A | Ω |
| Input Capacitance (Ciss) | 200-270 pF at VDS = -25 V, VGS = 0 V, f = 1 MHz | pF |
| Output Capacitance (Coss) | 60-80 pF | pF |
| Reverse Transfer Capacitance (Crss) | 10-15 pF | pF |
| Gate Resistance (Rg) | 0.1-7.5 Ω at f = 1 MHz | Ω |
| Total Gate Charge (Qg) | 6.2 nC (Typical) | nC |
| Turn-On Delay Time (td(on)) | 15-27 ns | ns |
| Rise Time (tr) | 11-20 ns | ns |
| Turn-Off Delay Time (td(off)) | 19-35 ns | ns |
| Fall Time (tf) | 13-24 ns | ns |
Key Features
- Low on-state resistance (RDS(on) = 1.5 Ω at VGS = -10 V, ID = -1.5 A)
- Low Crss (typical 10 pF)
- Fast switching performance
- Low gate charge (typical 6.2 nC)
- Improved dv/dt capability
- RoHS compliant, Pb-free, and halogen-free
Applications
- Audio amplifiers
- High efficiency switching DC/DC converters
- DC motor control
- Active clamp switches
- Automation
- Consumer appliances
- Building and home control
- Medical electronics/devices
- Military and civil aerospace
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC2523P?
The maximum drain to source voltage (VDS) is -150 V.
- What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is -3 A.
- What is the typical on-state resistance (RDS(on)) of the FDMC2523P?
The typical on-state resistance (RDS(on)) is 1.5 Ω at VGS = -10 V, ID = -1.5 A.
- What are the key features of the FDMC2523P?
The key features include low on-state resistance, low Crss, fast switching, low gate charge, and improved dv/dt capability.
- Is the FDMC2523P RoHS compliant?
- What are some common applications of the FDMC2523P?
- What is the typical gate charge (Qg) of the FDMC2523P?
- What is the turn-on delay time (td(on)) of the FDMC2523P?
- What is the package type of the FDMC2523P?
- What is the maximum rated power dissipation of the FDMC2523P?
