BSS84TC
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Diodes Incorporated BSS84TC

Manufacturer No:
BSS84TC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 130MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84TC is a P-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This MOSFET is designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. It is available in the SOT23 package, which is a standard and compact form factor suitable for a wide range of electronic designs. The BSS84TC is fully RoHS compliant, halogen and antimony free, and qualified to JEDEC standards for high reliability.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) -50 V
Drain Current (ID) -130 mA
On-Resistance (RDS(on)) 10 Ω @ VGS = -5V
Gate Threshold Voltage (VGS(th)) -1 to -3 V
Input Capacitance (Ciss) 150 pF @ VDS = -10V, VGS = 0V
Junction Temperature (TJ) -55 to 150 °C
Package SOT23 (Standard)

Key Features

  • Low On-Resistance (RDS(on))
  • Low Gate Threshold Voltage (VGS(th))
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free

Applications

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch
  • High-Efficiency Power Management Applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS84TC?

    The maximum drain-source voltage (VDS) of the BSS84TC is -50V.

  2. What is the typical on-resistance (RDS(on)) of the BSS84TC?

    The typical on-resistance (RDS(on)) of the BSS84TC is 10Ω at VGS = -5V.

  3. What is the gate threshold voltage (VGS(th)) range of the BSS84TC?

    The gate threshold voltage (VGS(th)) range of the BSS84TC is -1 to -3V.

  4. What is the maximum junction temperature (TJ) of the BSS84TC?

    The maximum junction temperature (TJ) of the BSS84TC is 150°C.

  5. Is the BSS84TC RoHS compliant?

    Yes, the BSS84TC is totally lead-free and fully RoHS compliant.

  6. What package type is the BSS84TC available in?

    The BSS84TC is available in the SOT23 (Standard) package.

  7. What are some typical applications of the BSS84TC?

    The BSS84TC is typically used in general purpose interfacing switches, power management functions, and analog switches.

  8. Is the BSS84TC suitable for automotive applications?

    While the BSS84TC itself is not specifically automotive-grade, an automotive-compliant version (BSS84Q) is available under a separate datasheet).

  9. What are the environmental benefits of the BSS84TC?

    The BSS84TC is halogen and antimony free, making it an environmentally friendly option).

  10. Where can I find detailed mechanical data for the BSS84TC?

    Detailed mechanical data, including package outline dimensions and suggested pad layouts, can be found on the Diodes Incorporated website).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS84TC
BSS84TC
MOSFET P-CH 50V 130MA SOT23-3

Similar Products

Part Number BSS84TC BSS84TA
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta) 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 25 V 40 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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