MMBT2222AQ-7-F
  • Share:

Diodes Incorporated MMBT2222AQ-7-F

Manufacturer No:
MMBT2222AQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
SS MID-PERF TRANSISTOR SOT23 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222AQ-7-F is a high-reliability NPN small signal transistor manufactured by Diodes Incorporated. This transistor is part of the MMBT2222A series and is designed for low power amplification and switching applications. It features an epitaxial planar die construction and is available in the SOT-23 package, making it suitable for surface mount technology (SMT). The device is fully RoHS compliant, lead-free, and qualified to AEC-Q101 standards, ensuring high reliability for automotive and other demanding applications.

Key Specifications

Characteristic Value Unit Test Condition
Polarity NPN
Collector-Emitter Voltage (Vceo) 40 V IC = 10mA, IB = 0
Collector Current (Ic) 600 mA
Power Dissipation (Pd) 350 mW
Collector-Base Breakdown Voltage (Vcbo) 75 V IC = 100µA, IE = 0
Emitter-Base Breakdown Voltage (Vebo) 6.0 V IE = 100µA, IC = 0
Saturation Voltage (Vce(sat)) < 300mV IC = 150mA
DC Current Gain (hfe) 35 (min) IC = 150mA, Vce = 10V
Transition Frequency (ft) 300 MHz Vce = 20V, IC = 20mA, f = 100MHz
Rise Time (tr) 25 ns Vcc = 30V, IC = 150mA, IB1 = 15mA
Fall Time (tf) 60 ns Vcc = 30V, IC = 150mA, IB1 = -IB2 = 15mA
Noise Figure (NF) 4.0 dB Vce = 10V, IC = 100µA, Rs = 1.0kΩ, f = 1.0kHz
Operating Temperature Range -55°C to +150°C
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Epitaxial planar die construction
  • Low saturation voltage Vce(sat) < 300mV @ 150mA
  • Complementary PNP type: MMBT2907A
  • Ideal for low power amplification and switching
  • Totally lead-free, halogen-free, and antimony-free; RoHS compliant
  • AEC-Q101 qualified for automotive applications
  • Manufactured in IATF 16949 certified facilities

Applications

The MMBT2222AQ-7-F is suitable for a variety of applications, including:

  • Low power amplification circuits
  • Switching circuits
  • Automotive electronics requiring high reliability (AEC-Q101 qualified)
  • General-purpose small signal applications

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT2222AQ-7-F?

    The maximum collector-emitter voltage (Vceo) is 40V.

  2. What is the maximum collector current of the MMBT2222AQ-7-F?

    The maximum collector current (Ic) is 600mA.

  3. What is the power dissipation of the MMBT2222AQ-7-F?

    The total power dissipation (Pd) is 350mW.

  4. What is the saturation voltage of the MMBT2222AQ-7-F?

    The saturation voltage (Vce(sat)) is less than 300mV at 150mA.

  5. Is the MMBT2222AQ-7-F RoHS compliant?

    Yes, the MMBT2222AQ-7-F is fully RoHS compliant, lead-free, halogen-free, and antimony-free.

  6. What is the operating temperature range of the MMBT2222AQ-7-F?

    The operating temperature range is -55°C to +150°C.

  7. What package style is the MMBT2222AQ-7-F available in?

    The MMBT2222AQ-7-F is available in the SOT-23 (SC-59, TO-236) package.

  8. Is the MMBT2222AQ-7-F suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.

  9. What is the transition frequency of the MMBT2222AQ-7-F?

    The transition frequency (ft) is 300MHz.

  10. What are the rise and fall times of the MMBT2222AQ-7-F?

    The rise time (tr) is 25ns, and the fall time (tf) is 60ns.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.03
21,878

Please send RFQ , we will respond immediately.

Same Series
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MMBT2222AQ-7-F MMBT2222AT-7-F MMBT2222A-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 310 mW 150 mW 310 mW
Frequency - Transition 300MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-523 SOT-23-3

Related Product By Categories

BCX17,235
BCX17,235
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
MJD50TF
MJD50TF
onsemi
TRANS NPN 400V 1A DPAK
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BCP53-10TX
BCP53-10TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP

Related Product By Brand

SMBJ5.0CA-13-F
SMBJ5.0CA-13-F
Diodes Incorporated
TVS DIODE 5VWM 9.2VC SMB
MBRB20200CT-13
MBRB20200CT-13
Diodes Incorporated
DIODE SCHOTTKY 200V 20A D2PAK
MBR10100CD-G1
MBR10100CD-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO252
BAT54CT-7-F-79
BAT54CT-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BZX84C2V4S-7-F-79
BZX84C2V4S-7-F-79
Diodes Incorporated
DIODE ZENER
BZX84C36S-7
BZX84C36S-7
Diodes Incorporated
DIODE ZENER ARRAY 36V SOT363
BCP53QTA
BCP53QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BSS84W-7-F
BSS84W-7-F
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT323
2N7002TA
2N7002TA
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
BSS138W-7
BSS138W-7
Diodes Incorporated
MOSFET N-CH 50V 0.2A SOT323
SA555S-13
SA555S-13
Diodes Incorporated
IC OSC SINGLE TIMER 500KHZ 8SO
74LVC1G08FZ4-7
74LVC1G08FZ4-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1410-6