MMBT2222AQ-7-F
  • Share:

Diodes Incorporated MMBT2222AQ-7-F

Manufacturer No:
MMBT2222AQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
SS MID-PERF TRANSISTOR SOT23 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222AQ-7-F is a high-reliability NPN small signal transistor manufactured by Diodes Incorporated. This transistor is part of the MMBT2222A series and is designed for low power amplification and switching applications. It features an epitaxial planar die construction and is available in the SOT-23 package, making it suitable for surface mount technology (SMT). The device is fully RoHS compliant, lead-free, and qualified to AEC-Q101 standards, ensuring high reliability for automotive and other demanding applications.

Key Specifications

Characteristic Value Unit Test Condition
Polarity NPN
Collector-Emitter Voltage (Vceo) 40 V IC = 10mA, IB = 0
Collector Current (Ic) 600 mA
Power Dissipation (Pd) 350 mW
Collector-Base Breakdown Voltage (Vcbo) 75 V IC = 100µA, IE = 0
Emitter-Base Breakdown Voltage (Vebo) 6.0 V IE = 100µA, IC = 0
Saturation Voltage (Vce(sat)) < 300mV IC = 150mA
DC Current Gain (hfe) 35 (min) IC = 150mA, Vce = 10V
Transition Frequency (ft) 300 MHz Vce = 20V, IC = 20mA, f = 100MHz
Rise Time (tr) 25 ns Vcc = 30V, IC = 150mA, IB1 = 15mA
Fall Time (tf) 60 ns Vcc = 30V, IC = 150mA, IB1 = -IB2 = 15mA
Noise Figure (NF) 4.0 dB Vce = 10V, IC = 100µA, Rs = 1.0kΩ, f = 1.0kHz
Operating Temperature Range -55°C to +150°C
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Epitaxial planar die construction
  • Low saturation voltage Vce(sat) < 300mV @ 150mA
  • Complementary PNP type: MMBT2907A
  • Ideal for low power amplification and switching
  • Totally lead-free, halogen-free, and antimony-free; RoHS compliant
  • AEC-Q101 qualified for automotive applications
  • Manufactured in IATF 16949 certified facilities

Applications

The MMBT2222AQ-7-F is suitable for a variety of applications, including:

  • Low power amplification circuits
  • Switching circuits
  • Automotive electronics requiring high reliability (AEC-Q101 qualified)
  • General-purpose small signal applications

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT2222AQ-7-F?

    The maximum collector-emitter voltage (Vceo) is 40V.

  2. What is the maximum collector current of the MMBT2222AQ-7-F?

    The maximum collector current (Ic) is 600mA.

  3. What is the power dissipation of the MMBT2222AQ-7-F?

    The total power dissipation (Pd) is 350mW.

  4. What is the saturation voltage of the MMBT2222AQ-7-F?

    The saturation voltage (Vce(sat)) is less than 300mV at 150mA.

  5. Is the MMBT2222AQ-7-F RoHS compliant?

    Yes, the MMBT2222AQ-7-F is fully RoHS compliant, lead-free, halogen-free, and antimony-free.

  6. What is the operating temperature range of the MMBT2222AQ-7-F?

    The operating temperature range is -55°C to +150°C.

  7. What package style is the MMBT2222AQ-7-F available in?

    The MMBT2222AQ-7-F is available in the SOT-23 (SC-59, TO-236) package.

  8. Is the MMBT2222AQ-7-F suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.

  9. What is the transition frequency of the MMBT2222AQ-7-F?

    The transition frequency (ft) is 300MHz.

  10. What are the rise and fall times of the MMBT2222AQ-7-F?

    The rise time (tr) is 25ns, and the fall time (tf) is 60ns.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.03
21,878

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MMBT2222AQ-7-F MMBT2222AT-7-F MMBT2222A-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 310 mW 150 mW 310 mW
Frequency - Transition 300MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-523 SOT-23-3

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
BFS20,235
BFS20,235
Nexperia USA Inc.
TRANS NPN 20V 0.025A TO236AB
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BC817K-40HR
BC817K-40HR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP

Related Product By Brand

BAW56-7-F
BAW56-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
BAV99BRW-7-F
BAV99BRW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS40DW-04-7
BAS40DW-04-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAV99DW-7-G
BAV99DW-7-G
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT363
BAW56-7-F-31
BAW56-7-F-31
Diodes Incorporated
DIODE ARRAY GP SOT23
BZX84C2V4S-7-F-79
BZX84C2V4S-7-F-79
Diodes Incorporated
DIODE ZENER
BZT52HC30WF-7
BZT52HC30WF-7
Diodes Incorporated
DIODE ZENER 30V 375MW SOD123F
BZX84B12Q-7-F
BZX84B12Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BSS8402DW-7-F
BSS8402DW-7-F
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
BSS138K-13
BSS138K-13
Diodes Incorporated
MOSFET N-CH 50V 310MA SOT23
LMV324TSG-13
LMV324TSG-13
Diodes Incorporated
IC OPAMP GP 4 CIRCUIT 14TSSOP