MMBT2222AQ-7-F
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Diodes Incorporated MMBT2222AQ-7-F

Manufacturer No:
MMBT2222AQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
SS MID-PERF TRANSISTOR SOT23 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222AQ-7-F is a high-reliability NPN small signal transistor manufactured by Diodes Incorporated. This transistor is part of the MMBT2222A series and is designed for low power amplification and switching applications. It features an epitaxial planar die construction and is available in the SOT-23 package, making it suitable for surface mount technology (SMT). The device is fully RoHS compliant, lead-free, and qualified to AEC-Q101 standards, ensuring high reliability for automotive and other demanding applications.

Key Specifications

Characteristic Value Unit Test Condition
Polarity NPN
Collector-Emitter Voltage (Vceo) 40 V IC = 10mA, IB = 0
Collector Current (Ic) 600 mA
Power Dissipation (Pd) 350 mW
Collector-Base Breakdown Voltage (Vcbo) 75 V IC = 100µA, IE = 0
Emitter-Base Breakdown Voltage (Vebo) 6.0 V IE = 100µA, IC = 0
Saturation Voltage (Vce(sat)) < 300mV IC = 150mA
DC Current Gain (hfe) 35 (min) IC = 150mA, Vce = 10V
Transition Frequency (ft) 300 MHz Vce = 20V, IC = 20mA, f = 100MHz
Rise Time (tr) 25 ns Vcc = 30V, IC = 150mA, IB1 = 15mA
Fall Time (tf) 60 ns Vcc = 30V, IC = 150mA, IB1 = -IB2 = 15mA
Noise Figure (NF) 4.0 dB Vce = 10V, IC = 100µA, Rs = 1.0kΩ, f = 1.0kHz
Operating Temperature Range -55°C to +150°C
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Epitaxial planar die construction
  • Low saturation voltage Vce(sat) < 300mV @ 150mA
  • Complementary PNP type: MMBT2907A
  • Ideal for low power amplification and switching
  • Totally lead-free, halogen-free, and antimony-free; RoHS compliant
  • AEC-Q101 qualified for automotive applications
  • Manufactured in IATF 16949 certified facilities

Applications

The MMBT2222AQ-7-F is suitable for a variety of applications, including:

  • Low power amplification circuits
  • Switching circuits
  • Automotive electronics requiring high reliability (AEC-Q101 qualified)
  • General-purpose small signal applications

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT2222AQ-7-F?

    The maximum collector-emitter voltage (Vceo) is 40V.

  2. What is the maximum collector current of the MMBT2222AQ-7-F?

    The maximum collector current (Ic) is 600mA.

  3. What is the power dissipation of the MMBT2222AQ-7-F?

    The total power dissipation (Pd) is 350mW.

  4. What is the saturation voltage of the MMBT2222AQ-7-F?

    The saturation voltage (Vce(sat)) is less than 300mV at 150mA.

  5. Is the MMBT2222AQ-7-F RoHS compliant?

    Yes, the MMBT2222AQ-7-F is fully RoHS compliant, lead-free, halogen-free, and antimony-free.

  6. What is the operating temperature range of the MMBT2222AQ-7-F?

    The operating temperature range is -55°C to +150°C.

  7. What package style is the MMBT2222AQ-7-F available in?

    The MMBT2222AQ-7-F is available in the SOT-23 (SC-59, TO-236) package.

  8. Is the MMBT2222AQ-7-F suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.

  9. What is the transition frequency of the MMBT2222AQ-7-F?

    The transition frequency (ft) is 300MHz.

  10. What are the rise and fall times of the MMBT2222AQ-7-F?

    The rise time (tr) is 25ns, and the fall time (tf) is 60ns.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number MMBT2222AQ-7-F MMBT2222AT-7-F MMBT2222A-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 310 mW 150 mW 310 mW
Frequency - Transition 300MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-523 SOT-23-3

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