MMBT2222AQ-7-F
  • Share:

Diodes Incorporated MMBT2222AQ-7-F

Manufacturer No:
MMBT2222AQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
SS MID-PERF TRANSISTOR SOT23 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222AQ-7-F is a high-reliability NPN small signal transistor manufactured by Diodes Incorporated. This transistor is part of the MMBT2222A series and is designed for low power amplification and switching applications. It features an epitaxial planar die construction and is available in the SOT-23 package, making it suitable for surface mount technology (SMT). The device is fully RoHS compliant, lead-free, and qualified to AEC-Q101 standards, ensuring high reliability for automotive and other demanding applications.

Key Specifications

Characteristic Value Unit Test Condition
Polarity NPN
Collector-Emitter Voltage (Vceo) 40 V IC = 10mA, IB = 0
Collector Current (Ic) 600 mA
Power Dissipation (Pd) 350 mW
Collector-Base Breakdown Voltage (Vcbo) 75 V IC = 100µA, IE = 0
Emitter-Base Breakdown Voltage (Vebo) 6.0 V IE = 100µA, IC = 0
Saturation Voltage (Vce(sat)) < 300mV IC = 150mA
DC Current Gain (hfe) 35 (min) IC = 150mA, Vce = 10V
Transition Frequency (ft) 300 MHz Vce = 20V, IC = 20mA, f = 100MHz
Rise Time (tr) 25 ns Vcc = 30V, IC = 150mA, IB1 = 15mA
Fall Time (tf) 60 ns Vcc = 30V, IC = 150mA, IB1 = -IB2 = 15mA
Noise Figure (NF) 4.0 dB Vce = 10V, IC = 100µA, Rs = 1.0kΩ, f = 1.0kHz
Operating Temperature Range -55°C to +150°C
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Epitaxial planar die construction
  • Low saturation voltage Vce(sat) < 300mV @ 150mA
  • Complementary PNP type: MMBT2907A
  • Ideal for low power amplification and switching
  • Totally lead-free, halogen-free, and antimony-free; RoHS compliant
  • AEC-Q101 qualified for automotive applications
  • Manufactured in IATF 16949 certified facilities

Applications

The MMBT2222AQ-7-F is suitable for a variety of applications, including:

  • Low power amplification circuits
  • Switching circuits
  • Automotive electronics requiring high reliability (AEC-Q101 qualified)
  • General-purpose small signal applications

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT2222AQ-7-F?

    The maximum collector-emitter voltage (Vceo) is 40V.

  2. What is the maximum collector current of the MMBT2222AQ-7-F?

    The maximum collector current (Ic) is 600mA.

  3. What is the power dissipation of the MMBT2222AQ-7-F?

    The total power dissipation (Pd) is 350mW.

  4. What is the saturation voltage of the MMBT2222AQ-7-F?

    The saturation voltage (Vce(sat)) is less than 300mV at 150mA.

  5. Is the MMBT2222AQ-7-F RoHS compliant?

    Yes, the MMBT2222AQ-7-F is fully RoHS compliant, lead-free, halogen-free, and antimony-free.

  6. What is the operating temperature range of the MMBT2222AQ-7-F?

    The operating temperature range is -55°C to +150°C.

  7. What package style is the MMBT2222AQ-7-F available in?

    The MMBT2222AQ-7-F is available in the SOT-23 (SC-59, TO-236) package.

  8. Is the MMBT2222AQ-7-F suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.

  9. What is the transition frequency of the MMBT2222AQ-7-F?

    The transition frequency (ft) is 300MHz.

  10. What are the rise and fall times of the MMBT2222AQ-7-F?

    The rise time (tr) is 25ns, and the fall time (tf) is 60ns.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.03
21,878

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MMBT2222AQ-7-F MMBT2222AT-7-F MMBT2222A-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 310 mW 150 mW 310 mW
Frequency - Transition 300MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-523 SOT-23-3

Related Product By Categories

BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BCX56-10TX
BCX56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BC33725BU
BC33725BU
onsemi
TRANS NPN 45V 0.8A TO92-3
BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
ST13007
ST13007
STMicroelectronics
TRANS NPN 400V 8A TO220
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
BCW60D
BCW60D
Fairchild Semiconductor
TRANS NPN 32V 0.1A SOT23-3
BC846BQBZ
BC846BQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL

Related Product By Brand

1N5711WS-13
1N5711WS-13
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
BAS40BRW-7
BAS40BRW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAS16Q-13-F
BAS16Q-13-F
Diodes Incorporated
SWITCHING DIODE SOT23 T&R 10K
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BZX84C20TS-7-F
BZX84C20TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 20V SOT363
BZT52HC39WF-7
BZT52HC39WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZX84C10-7-F-31
BZX84C10-7-F-31
Diodes Incorporated
DIODE ZENER 10V 300MW SOT23
BZX84C18-7-F-31
BZX84C18-7-F-31
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
MMBT3904T-13
MMBT3904T-13
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
BSS84DWQ-7
BSS84DWQ-7
Diodes Incorporated
BSS FAMILY SOT363 T&R 3K
74LVC1G14Z-7
74LVC1G14Z-7
Diodes Incorporated
IC INVERT SCHMITT 1CH 1IN SOT553
74AHCT164D14
74AHCT164D14
Diodes Incorporated
LOGIC AHC STD 14DIP