MMBT2222AT-7-F
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Diodes Incorporated MMBT2222AT-7-F

Manufacturer No:
MMBT2222AT-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222AT-7-F is a high-performance NPN small signal surface mount transistor manufactured by Diodes Incorporated. This transistor is part of the MMBT2222AT series and is known for its epitaxial planar die construction and ultra-small SOT-523 package. It is designed to offer excellent electrical characteristics and reliability, making it suitable for a wide range of electronic applications.

Key Specifications

Characteristic Symbol Value Unit
Polarity - NPN -
Collector-Base Voltage (Max) VCBO 75 V
Collector-Emitter Voltage (Max) VCEO 40 V
Emitter-Base Voltage (Max) VEBO 6.0 V
Collector Current (Continuous) IC 600 mA
Power Dissipation (Total) Pd 150 mW
Thermal Resistance, Junction to Ambient RθJA 833 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Mounting Method - Surface Mount -
Package Type - SOT-523 -
Package Quantity per Reel - 3000 -

Key Features

  • Epitaxial Planar Die Construction: Ensures high reliability and performance.
  • Ultra-Small Surface Mount Package (SOT-523): Ideal for space-constrained applications.
  • Lead Free/RoHS Compliant: Environmentally friendly and compliant with international regulations.
  • 'Green' Device: Made from environmentally friendly materials.
  • Complementary PNP Type Available (MMBT2907AT): Allows for balanced circuit design.
  • High Current Gain-Bandwidth Product (fT): Up to 300 MHz, suitable for high-frequency applications.
  • Low Delay Time and Rise Time: 10 ns and 25 ns respectively, making it suitable for switching applications.
  • Molded Plastic Case with UL Flammability Classification Rating 94V-0: Ensures safety and durability.
  • Moisture Sensitivity Level 1 per J-STD-020C: Reduces the risk of moisture-related failures.

Applications

  • General Purpose Amplification: Suitable for a wide range of amplification tasks due to its high current gain and low noise characteristics.
  • Switching Circuits: Fast switching times make it ideal for use in switching applications.
  • Audio Amplifiers: Used in audio circuits due to its high frequency response and low distortion.
  • Automotive Electronics: Can be used in various automotive electronic systems due to its robustness and reliability.
  • Consumer Electronics: Commonly used in consumer electronic devices such as TVs, radios, and other household appliances.

Q & A

  1. What is the polarity of the MMBT2222AT-7-F transistor?

    The MMBT2222AT-7-F is an NPN bipolar transistor.

  2. What is the maximum collector-emitter voltage for the MMBT2222AT-7-F?

    The maximum collector-emitter voltage (VCEO) is 40 V.

  3. What is the continuous collector current rating of the MMBT2222AT-7-F?

    The continuous collector current (IC) is 600 mA.

  4. What is the power dissipation rating of the MMBT2222AT-7-F?

    The total power dissipation (Pd) is 150 mW.

  5. Is the MMBT2222AT-7-F RoHS compliant?

    Yes, the MMBT2222AT-7-F is lead free and RoHS compliant.

  6. What is the package type and quantity per reel for the MMBT2222AT-7-F?

    The package type is SOT-523, and there are 3000 units per reel.

  7. What is the operating temperature range for the MMBT2222AT-7-F?

    The operating and storage temperature range is -55°C to +150°C.

  8. Does the MMBT2222AT-7-F have a complementary PNP type available?

    Yes, the complementary PNP type is the MMBT2907AT.

  9. What is the current gain-bandwidth product (fT) of the MMBT2222AT-7-F?

    The current gain-bandwidth product (fT) is up to 300 MHz.

  10. What are the typical delay and rise times for the MMBT2222AT-7-F?

    The typical delay time (td) is 10 ns, and the typical rise time (tr) is 25 ns.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:150 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-523
Supplier Device Package:SOT-523
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Same Series
MMBT2222AT-7-F
MMBT2222AT-7-F
TRANS NPN 40V 0.6A SOT523

Similar Products

Part Number MMBT2222AT-7-F MMBT2222A-7-F MMBT2222AQ-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 150 mW 310 mW 310 mW
Frequency - Transition 300MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-523 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-523 SOT-23-3 SOT-23-3

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