MMBT2222AT-7
  • Share:

Diodes Incorporated MMBT2222AT-7

Manufacturer No:
MMBT2222AT-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222AT-7 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. Although this specific part is now obsolete and no longer in production, it was widely used in various electronic circuits due to its robust performance and reliability. For current applications, substitutes such as the MMST4401-7-F are recommended.

Key Specifications

ParameterValue
Package TypeSOT-523
Collector-Base Voltage (Vcb)30 V
Collector-Emitter Voltage (Vce)30 V
Emitter-Base Voltage (Veb)5 V
Collector Current (Ic)600 mA
Base Current (Ib)50 mA
Power Dissipation (Pd)225 mW
Operating Temperature Range-55°C to 150°C
RoHS ComplianceYes, compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3)

Key Features

  • General-purpose NPN bipolar junction transistor
  • High current gain (hFE) of 100 to 300
  • Low noise figure
  • High switching speed
  • Compact SOT-523 package
  • RoHS compliant, ensuring environmental sustainability

Applications

The MMBT2222AT-7 transistor is suitable for a variety of applications, including general-purpose switching and amplification in electronic circuits. It can be used in audio amplifiers, power supplies, and other electronic devices that require reliable and efficient transistor performance.

Q & A

  1. What is the package type of the MMBT2222AT-7 transistor? The package type is SOT-523.
  2. What is the maximum collector current (Ic) of the MMBT2222AT-7? The maximum collector current is 600 mA.
  3. Is the MMBT2222AT-7 RoHS compliant? Yes, it is compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3).
  4. What is the operating temperature range of the MMBT2222AT-7? The operating temperature range is -55°C to 150°C.
  5. What are some common applications of the MMBT2222AT-7 transistor? It is used in general-purpose switching and amplification in electronic circuits, including audio amplifiers and power supplies.
  6. Is the MMBT2222AT-7 still in production? No, the MMBT2222AT-7 is now obsolete and no longer manufactured.
  7. What are some recommended substitutes for the MMBT2222AT-7? Substitutes such as the MMST4401-7-F are recommended.
  8. What is the maximum collector-base voltage (Vcb) of the MMBT2222AT-7? The maximum collector-base voltage is 30 V.
  9. What is the maximum power dissipation (Pd) of the MMBT2222AT-7? The maximum power dissipation is 225 mW.
  10. What is the typical current gain (hFE) of the MMBT2222AT-7? The typical current gain (hFE) is between 100 to 300.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:150 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-523
Supplier Device Package:SOT-523
0 Remaining View Similar

In Stock

-
148

Please send RFQ , we will respond immediately.

Same Series
MMBT2222AT-7-F
MMBT2222AT-7-F
TRANS NPN 40V 0.6A SOT523

Similar Products

Part Number MMBT2222AT-7 MMBT2222A-7
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 150 mW 310 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-523 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-523 SOT-23-3

Related Product By Categories

TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PBHV9040T,215
PBHV9040T,215
Nexperia USA Inc.
TRANS PNP 400V 0.25A TO236AB
MMBT5088LT1G
MMBT5088LT1G
onsemi
TRANS NPN 30V 0.05A SOT23-3
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF
2N6107-AP
2N6107-AP
Micro Commercial Co
TRANS PNP 70V 7A TO220AB

Related Product By Brand

BAV199TQ-7-F
BAV199TQ-7-F
Diodes Incorporated
SWITCHING STANDARD DIODE SOT523
BAS16Q-13-F
BAS16Q-13-F
Diodes Incorporated
SWITCHING DIODE SOT23 T&R 10K
BZX84C3V9Q-7-F
BZX84C3V9Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZT52HC39WF-7
BZT52HC39WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZX84C2V4-7
BZX84C2V4-7
Diodes Incorporated
DIODE ZENER 2.4V 300MW SOT23-3
BZX84C36-7-G
BZX84C36-7-G
Diodes Incorporated
DIODE ZENER
BFS17HTA
BFS17HTA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
MMBTA63-7-F
MMBTA63-7-F
Diodes Incorporated
TRANS PNP DARL 30V 0.5A SOT23-3
BC847BFZ-7B
BC847BFZ-7B
Diodes Incorporated
TRANS NPN 45V 0.1A 3DFN
BCV49TA
BCV49TA
Diodes Incorporated
TRANS NPN DARL 60V 0.5A SOT89-3
2N7002KX-7
2N7002KX-7
Diodes Incorporated
MOSFET N-CH 60V SOT23-3
ULN2002AD16-U
ULN2002AD16-U
Diodes Incorporated
IC PWR RELAY 7NPN 1:1 16DIP