BCP5616TA
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Diodes Incorporated BCP5616TA

Manufacturer No:
BCP5616TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5616TA is a medium power NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is part of the BCP54/55/56 series, known for its high reliability and robust performance. It is packaged in a SOT223 case, making it suitable for a variety of applications requiring medium power switching or amplification.

The BCP5616TA is designed to meet stringent automotive and industrial standards, including AEC-Q101 qualification, and is produced in IATF 16949 certified facilities. It is also fully RoHS compliant, halogen-free, and antimony-free, aligning with environmental regulations.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO - - 100 V IC = 100µA
Collector-Emitter Breakdown Voltage BVCEO - - 80 V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO - - 5 V IE = 10µA
Continuous Collector Current IC - - 1 A -
Peak Pulse Current ICM - - 2 A -
Power Dissipation Pd - - 2 W -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.5 V IC = 500mA, IB = 50mA
Transition Frequency fT - 150 - MHz IC = 50mA, VCE = 10V, f = 100MHz
DC Current Gain (hFE) hFE 100 - 250 - IC = 150mA, VCE = 2V (Gain Group 16)

Key Features

  • High Continuous Collector Current: IC = 1A
  • Peak Pulse Current: ICM = 2A
  • Low Saturation Voltage: VCE(sat) < 500mV @ 0.5A
  • Gain Groups: 10 and 16
  • Complementary PNP Types: BCP51, 52, and 53
  • Totally Lead-Free and Fully RoHS Compliant
  • Halogen- and Antimony-Free, “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • Epitaxial Planar Die Construction
  • UL Flammability Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020

Applications

  • Medium Power Switching or Amplification Applications
  • AF Driver and Output Stages
  • Automotive Applications requiring specific change control and high reliability

Q & A

  1. What is the package type of the BCP5616TA transistor?

    The BCP5616TA is packaged in a SOT223 case.

  2. What is the continuous collector current of the BCP5616TA?

    The continuous collector current is 1A.

  3. What is the peak pulse current of the BCP5616TA?

    The peak pulse current is 2A.

  4. What is the collector-emitter breakdown voltage of the BCP5616TA?

    The collector-emitter breakdown voltage is 80V.

  5. Is the BCP5616TA RoHS compliant?

    Yes, the BCP5616TA is fully RoHS compliant and lead-free.

  6. What are the gain groups available for the BCP5616TA?

    The gain groups available are 10 and 16.

  7. What is the transition frequency of the BCP5616TA?

    The transition frequency is 150 MHz.

  8. What are the typical applications of the BCP5616TA?

    Typical applications include medium power switching or amplification and AF driver and output stages.

  9. Is the BCP5616TA qualified to automotive standards?

    Yes, it is qualified to AEC-Q101 standards for high reliability.

  10. What is the moisture sensitivity level of the BCP5616TA?

    The moisture sensitivity level is 1 per J-STD-020.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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BCP5616TA
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TRANS NPN 80V 1A SOT223-3

Similar Products

Part Number BCP5616TA BCP5616TTA BCP5616TC BCP5316TA BCP5416TA BCP5516TA BCP5610TA BCP5616QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Obsolete Active Active Active Active Active
Transistor Type NPN NPN NPN PNP NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V 45 V 60 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2.5 W 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 150MHz 150MHz 125MHz 150MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

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