BCP5616QTA
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Diodes Incorporated BCP5616QTA

Manufacturer No:
BCP5616QTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5616QTA is an 80V NPN medium power bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is specifically designed to meet the stringent requirements of automotive applications. It is AEC-Q101 qualified, PPAP capable, and produced in IATF16949 certified facilities, ensuring high reliability and compliance with automotive standards.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 100 V IC = 100µA
Collector-Emitter Breakdown Voltage BVCEO 80 V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 5 V IE = 10µA
Continuous Collector Current IC 1 A
Peak Pulse Collector Current ICM 2 A
Power Dissipation PD 2 W
Collector-Emitter Saturation Voltage VCE(SAT) 0.5 V IC = 500mA, IB = 50mA
Static Forward Current Transfer Ratio (hFE) hFE 100 250 IC = 150mA, VCE = 2V
Transition Frequency (fT) fT 100 150 MHz IC = 50mA, VCE = 10V, f = 100MHz

Key Features

  • High Continuous Collector Current: 1A
  • Peak Pulse Current: 2A
  • Low Saturation Voltage: VCE(SAT) < 500mV @ 0.5A
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free, “Green” Device
  • AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities
  • Complementary PNP Type: BCP5316Q
  • Package: SOT223 with Molded Plastic, “Green” Molding Compound
  • UL Flammability Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020

Applications

  • Medium Power Switching or Amplification Applications
  • Automotive Applications requiring specific change control
  • AF Driver and Output Stages

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BCP5616QTA?

    The maximum collector-emitter breakdown voltage (BVCEO) is 80V.

  2. What is the continuous collector current rating of the BCP5616QTA?

    The continuous collector current (IC) is 1A.

  3. What is the peak pulse collector current of the BCP5616QTA?

    The peak pulse collector current (ICM) is 2A.

  4. Is the BCP5616QTA RoHS compliant?
  5. What is the collector-emitter saturation voltage of the BCP5616QTA?

    The collector-emitter saturation voltage (VCE(SAT)) is less than 500mV at 0.5A.

  6. What is the transition frequency (fT) of the BCP5616QTA?

    The transition frequency (fT) is between 100MHz and 150MHz.

  7. Is the BCP5616QTA suitable for automotive applications?
  8. What is the package type of the BCP5616QTA?

    The package type is SOT223.

  9. What are the thermal characteristics of the BCP5616QTA?

    The power dissipation (PD) is 2W, and the thermal resistance from junction to ambient (RθJA) is 62°C/W.

  10. Is the BCP5616QTA halogen-free?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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Similar Products

Part Number BCP5616QTA BCP5616TA BCP5616TTA BCP5616QTC BCP5616TQTA BCP5316QTA BCP5416QTA BCP5610QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN PNP NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V 80 V 80 V 45 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 2 W 2 W 2.5 W 2 W 2.5 W 2 W 2 W 2 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

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