Overview
The BCP5610QTA is a medium power NPN transistor manufactured by Diodes Incorporated. This transistor is part of the BCP54/55/56 series, known for its high continuous collector current and medium voltage capabilities. It is packaged in a SOT223 case, making it suitable for surface mounting in various electronic circuits. The device is designed to meet stringent automotive and industrial standards, including AEC-Q101 qualification and compliance with RoHS and other environmental directives.
Key Specifications
| Parameter | Value | Unit | Test Conditions |
|---|---|---|---|
| Collector-Base Breakdown Voltage (VCBO) | 100 | V | IE = 0 |
| Collector-Emitter Breakdown Voltage (VCEO) | 80 | V | IB = 0 |
| Emitter-Base Breakdown Voltage (VEBO) | 5 | V | IC = 0 |
| Collector Current (IC) | 1 | A | |
| Peak Collector Current (ICM) | 2 | A | tP < 5ms |
| Base Current (IB) | 0.1 | A | |
| Peak Base Current (IBM) | 0.2 | A | tP < 5ms |
| Total Power Dissipation (Ptot) | 2 | W | Tamb = 25°C |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.5 | V | IC = 500mA, IB = 50mA |
| DC Current Gain (hFE) | 100 - 250 | IC = 150mA, VCE = 2V | |
| Maximum Operating Junction Temperature (TJ) | 150 | °C | |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 78 | °C/W | Device mounted on PCB area of 1 cm² |
Key Features
- Silicon epitaxial planar NPN medium voltage transistor
- SOT223 plastic package for surface mounting circuits
- High continuous collector current of 1A and peak pulse current of 2A
- Low saturation voltage VCE(sat) < 500mV @ 0.5A
- DC current gain (hFE) ranging from 100 to 250
- Totally lead-free and fully RoHS compliant
- Halogen- and antimony-free, 'Green' device
- AEC-Q101 qualified for automotive applications
Applications
- Medium power switching or amplification applications
- AF driver and output stages
- Output stage for audio amplifiers circuits
- Automotive post-voltage regulation
- Medium voltage load switch transistor
Q & A
- What is the maximum collector-emitter breakdown voltage of the BCP5610QTA transistor?
The maximum collector-emitter breakdown voltage (VCEO) is 80V.
- What is the continuous collector current rating of the BCP5610QTA?
The continuous collector current (IC) is 1A.
- What is the peak collector current rating of the BCP5610QTA?
The peak collector current (ICM) is 2A for pulses less than 5ms.
- What is the total power dissipation of the BCP5610QTA at 25°C ambient temperature?
The total power dissipation (Ptot) is 2W at Tamb = 25°C.
- What is the collector-emitter saturation voltage of the BCP5610QTA?
The collector-emitter saturation voltage (VCE(sat)) is less than 0.5V at IC = 500mA and IB = 50mA.
- What is the DC current gain (hFE) of the BCP5610QTA?
The DC current gain (hFE) ranges from 100 to 250 at IC = 150mA and VCE = 2V.
- Is the BCP5610QTA transistor RoHS compliant?
Yes, the BCP5610QTA is totally lead-free and fully RoHS compliant.
- What is the maximum operating junction temperature of the BCP5610QTA?
The maximum operating junction temperature (TJ) is 150°C.
- Is the BCP5610QTA qualified for automotive applications?
Yes, the BCP5610QTA is AEC-Q101 qualified for automotive applications.
- What package type is used for the BCP5610QTA transistor?
The BCP5610QTA is packaged in a SOT223 plastic package for surface mounting.
- What are some common applications of the BCP5610QTA transistor?
Common applications include medium power switching or amplification, AF driver and output stages, output stage for audio amplifiers, and automotive post-voltage regulation).
