BCP5610QTC
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Diodes Incorporated BCP5610QTC

Manufacturer No:
BCP5610QTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5610QTC is an 80V NPN medium power bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is specifically designed to meet the stringent requirements of automotive applications. It is packaged in a SOT223-3 surface mount format, making it suitable for a variety of medium power switching and amplification roles.

Key Specifications

Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5 V
Continuous Collector Current IC 1 A
Peak Pulse Collector Current ICM 2 A
Continuous Base Current IB 100 mA
Peak Pulse Base Current IBM 200 mA
Power Dissipation PD 2 W
Thermal Resistance, Junction to Ambient RθJA 62 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Electrostatic Discharge—Human Body Model ESD HBM 4000 V

Key Features

  • High Voltage Rating: BVCEO > 80V, making it suitable for high-voltage applications.
  • High Continuous Collector Current: IC = 1A, with a peak pulse current of 2A.
  • Low Saturation Voltage: VCE(SAT) < 500mV @ 0.5A, ensuring efficient operation.
  • Complementary PNP Type: BCP5316Q available for matching PNP requirements.
  • Environmental Compliance: Totally lead-free, RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for high reliability.
  • PPAP Capable: Supports Production Part Approval Process (PPAP) for automotive applications.

Applications

  • Medium Power Switching or Amplification: Suitable for various switching and amplification roles in medium power applications.
  • AF Driver and Output Stages: Ideal for use in audio frequency driver and output stages due to its high current handling and low saturation voltage.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP5610QTC?

    The maximum collector-emitter voltage (VCEO) is 80V.

  2. What is the continuous collector current rating of the BCP5610QTC?

    The continuous collector current (IC) is 1A.

  3. Is the BCP5610QTC RoHS compliant?
  4. What is the thermal resistance from junction to ambient for the BCP5610QTC?
  5. What are the operating and storage temperature ranges for the BCP5610QTC?
  6. Is the BCP5610QTC suitable for automotive applications?
  7. What is the peak pulse collector current of the BCP5610QTC?
  8. Does the BCP5610QTC have a complementary PNP type?
  9. What is the power dissipation of the BCP5610QTC?
  10. Is the BCP5610QTC PPAP capable?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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Similar Products

Part Number BCP5610QTC BCP5616QTC BCP5610QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 150MHz 150MHz 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3

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