Overview
The BUF420AW is a high voltage fast-switching NPN power transistor manufactured by STMicroelectronics. This transistor is designed using High Voltage Multi Epitaxial Planar technology, which enables high switching speeds and high voltage capacity. It features a Cellular Emitter structure with planar edge termination, enhancing its switching performance while maintaining a wide Reverse Bias Safe Operating Area (RBSOA).
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEV) | 1000 | V |
| Collector-Emitter Voltage (VCEO) | 450 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Collector Current (IC) | 30 | A |
| Collector Peak Current (ICM) | 60 | A |
| Base Current (IB) | 6 | A |
| Base Peak Current (IBM) | 9 | A |
| Total Dissipation at Tc = 25°C (Ptot) | 200 | W |
| Storage Temperature (Tstg) | -65 to 150 | °C |
| Max. Operating Junction Temperature (Tj) | 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.63 | °C/W |
| Forward Current Transfer Ratio (hFE), MIN | 32 | |
| Package | TO-247 |
Key Features
- High voltage capability with a collector-emitter voltage of up to 450 V and collector-base voltage of up to 1000 V.
- Very high switching speeds due to High Voltage Multi Epitaxial Planar technology.
- Low base-drive requirements, making it efficient for various applications.
- Wide Reverse Bias Safe Operating Area (RBSOA) ensuring reliable operation under different conditions.
- Minimum lot-to-lot spread for consistent performance across different batches).
Applications
- Switch mode power supplies, where high switching speeds and high voltage capacity are crucial.
- Motor control applications, benefiting from the transistor's high current handling and fast switching capabilities).
Q & A
- What is the maximum collector-emitter voltage of the BUF420AW transistor?
The maximum collector-emitter voltage (VCEO) is 450 V).
- What is the maximum collector current of the BUF420AW transistor?
The maximum collector current (IC) is 30 A, with a peak current of 60 A for short pulses).
- What is the thermal resistance junction-case of the BUF420AW transistor?
The thermal resistance junction-case (Rthj-case) is 0.63 °C/W).
- What is the maximum operating junction temperature of the BUF420AW transistor?
The maximum operating junction temperature (Tj) is 150 °C).
- What package type is the BUF420AW transistor available in?
The BUF420AW transistor is available in the TO-247 package).
- What are the typical applications of the BUF420AW transistor?
The BUF420AW is typically used in switch mode power supplies and motor control applications).
- What technology is used in the manufacturing of the BUF420AW transistor?
The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology).
- What is the minimum forward current transfer ratio (hFE) of the BUF420AW transistor?
The minimum forward current transfer ratio (hFE) is 32).
- What is the storage temperature range for the BUF420AW transistor?
The storage temperature range is -65 to 150 °C).
- Does the BUF420AW transistor have low base-drive requirements?
Yes, the BUF420AW transistor has low base-drive requirements, making it efficient for various applications).
