Overview
The BC846B/DG/B4R is a general-purpose NPN bipolar junction transistor (BJT) produced by Nexperia USA Inc. This transistor is designed for a wide range of applications, including general-purpose amplifier and switching circuits. It is housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient electronic designs.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | 80 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 65 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6.0 | V | ||
| Collector Current | Ic | 100 mA | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 V | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.9 V | |||
| Maximum Power Dissipation | Pd | 500 mW | |||
| Maximum Junction Temperature | Tj | 150°C | |||
| Package Type | SOT23 (TO-236AB) |
Key Features
- General-Purpose Transistor: Suitable for a wide range of amplifier and switching applications.
- Compact Package: Housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, ideal for space-constrained designs.
- High Voltage Capability: Collector-Emitter Breakdown Voltage of up to 65 V and Collector-Base Breakdown Voltage of up to 80 V.
- Low Saturation Voltages: Collector-Emitter Saturation Voltage of 0.25 V and Base-Emitter Saturation Voltage of 0.9 V.
- High Current Gain: DC Current Gain (hFE) ranges from 110 to 200 for the BC846B series.
- Temperature Stability: Maximum Junction Temperature of 150°C and operating temperature range from -55°C to +150°C.
Applications
The BC846B/DG/B4R transistor is versatile and can be used in various applications across different industries, including:
- Automotive Systems: For general-purpose amplifier and switching circuits in automotive electronics.
- Industrial Electronics: In control circuits, signal processing, and power management.
- Consumer Electronics: For audio amplifiers, power supplies, and other general-purpose applications.
- Mobile and Wearable Devices: Due to its compact size and low power consumption, it is suitable for mobile and wearable electronics.
Q & A
- What is the maximum collector current of the BC846B/DG/B4R transistor?
The maximum collector current is 100 mA.
- What is the collector-emitter breakdown voltage of the BC846B/DG/B4R transistor?
The collector-emitter breakdown voltage is up to 65 V.
- What package type is the BC846B/DG/B4R transistor housed in?
The transistor is housed in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
- What is the maximum power dissipation of the BC846B/DG/B4R transistor?
The maximum power dissipation is 500 mW.
- What is the typical DC current gain (hFE) of the BC846B/DG/B4R transistor?
The typical DC current gain (hFE) ranges from 110 to 200.
- What are the operating temperature ranges for the BC846B/DG/B4R transistor?
The operating temperature range is from -55°C to +150°C.
- Is the BC846B/DG/B4R transistor RoHS compliant?
Yes, the BC846B/DG/B4R transistor is RoHS compliant.
- What are some common applications of the BC846B/DG/B4R transistor?
Common applications include general-purpose amplifier and switching circuits in automotive, industrial, consumer, and mobile electronics.
- What is the base-emitter saturation voltage of the BC846B/DG/B4R transistor?
The base-emitter saturation voltage is up to 0.9 V.
- How can I obtain the datasheet for the BC846B/DG/B4R transistor?
You can obtain the datasheet from the official Nexperia website or from authorized distributors like DigiPart or Lisleapex.
