PMEG4010AESBYL
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Nexperia USA Inc. PMEG4010AESBYL

Manufacturer No:
PMEG4010AESBYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 1A SOD993
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMEG4010AESBYL is a Schottky diode produced by Nexperia USA Inc. This component is designed for high-efficiency applications, leveraging the advantages of Schottky diodes such as low forward voltage drop and fast switching times. It is particularly suited for use in power management, switching power supplies, and other high-frequency applications where efficiency and reliability are critical.

Key Specifications

ParameterValue
Voltage Rating (V)40 V
Current Rating (I)1.4 A
Forward Voltage Drop (Vf)0.55 V (typical at 1 A)
Reverse Current (Ir)1 μA (maximum at 40 V)
Package TypeDSN-1006-2 (2-pin)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low forward voltage drop (Vf) of 0.55 V (typical at 1 A), reducing power losses.
  • Fast switching times, making it suitable for high-frequency applications.
  • High current rating of 1.4 A, supporting a wide range of power management needs.
  • Compact DSN-1006-2 package, ideal for space-constrained designs.
  • Wide operating temperature range from -55°C to 150°C, ensuring reliability in various environments.

Applications

  • Power management and switching power supplies.
  • High-frequency applications such as DC-DC converters and power factor correction circuits.
  • Rectification and voltage regulation in electronic devices.
  • Automotive and industrial power systems where high efficiency and reliability are required.

Q & A

  1. What is the voltage rating of the PMEG4010AESBYL Schottky diode?
    The voltage rating of the PMEG4010AESBYL is 40 V.
  2. What is the current rating of this diode?
    The current rating of the PMEG4010AESBYL is 1.4 A.
  3. What is the typical forward voltage drop of this diode?
    The typical forward voltage drop (Vf) is 0.55 V at 1 A.
  4. What is the package type of the PMEG4010AESBYL?
    The package type is DSN-1006-2 (2-pin).
  5. What is the operating temperature range of this diode?
    The operating temperature range is from -55°C to 150°C.
  6. What are some common applications for the PMEG4010AESBYL?
    Common applications include power management, switching power supplies, high-frequency applications, and automotive and industrial power systems.
  7. Why is the PMEG4010AESBYL preferred in high-frequency applications?
    It is preferred due to its fast switching times and low forward voltage drop, which enhance efficiency and reduce power losses.
  8. Can the PMEG4010AESBYL be used in automotive applications?
    Yes, it can be used in automotive applications due to its wide operating temperature range and high reliability.
  9. What is the reverse current rating of the PMEG4010AESBYL?
    The maximum reverse current (Ir) is 1 μA at 40 V.
  10. Where can I find detailed specifications and datasheets for the PMEG4010AESBYL?
    Detailed specifications and datasheets can be found on the official Nexperia website, as well as on distributor sites like Digi-Key, Mouser, and Future Electronics.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:505 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):3.1 ns
Current - Reverse Leakage @ Vr:1250 µA @ 40 V
Capacitance @ Vr, F:75pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:DSN1006-2
Operating Temperature - Junction:150°C (Max)
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In Stock

$0.39
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Same Series
PMEG4010AESBZ
PMEG4010AESBZ
DIODE SCHOTTKY 40V 1A DSN1006-2

Similar Products

Part Number PMEG4010AESBYL PMEG4010ESBYL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 505 mV @ 1 A 610 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 3.1 ns 2.9 ns
Current - Reverse Leakage @ Vr 1250 µA @ 40 V 40 µA @ 40 V
Capacitance @ Vr, F 75pF @ 1V, 1MHz 22pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN
Supplier Device Package DSN1006-2 DSN1006-2
Operating Temperature - Junction 150°C (Max) 150°C (Max)

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