NX138BKVL
  • Share:

Nexperia USA Inc. NX138BKVL

Manufacturer No:
NX138BKVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 265MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX138BKW is a 60 V, N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is housed in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-performance applications requiring low threshold voltage and very fast switching capabilities.

Key Specifications

ParameterValue
TypeN-channel enhancement mode FET
PackageSOT323 (SC-70)
Vds (Max)60 V
Vgs (Max)±20 V
Vgs(th) (Max) @ Id1.5 V @ 250 µA
Rds On (Max) @ Id, Vgs3.5 Ohm @ 200 mA, 10 V
Id (Continuous Drain) @ 25°C210 mA
Power Dissipation (Max)266 mW (Ta), 1.33 W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds20 pF @ 30 V

Key Features

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
  • Automotive and industrial applications
  • Power, computing, consumer, mobile, and wearable devices

Q & A

  1. What is the maximum drain-source voltage (Vds) of the NX138BKW?
    The maximum drain-source voltage (Vds) is 60 V.
  2. What is the package type of the NX138BKW?
    The package type is SOT323 (SC-70).
  3. What is the maximum continuous drain current (Id) at 25°C?
    The maximum continuous drain current (Id) at 25°C is 210 mA.
  4. What is the typical Rds On at 200 mA and 10 V Vgs?
    The typical Rds On at 200 mA and 10 V Vgs is 3.5 Ohm.
  5. Does the NX138BKW have ESD protection?
    Yes, it has ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  6. What are the operating temperature ranges for the NX138BKW?
    The operating temperature ranges are -55°C ~ 150°C (TJ).
  7. What is the gate charge (Qg) at 10 V Vgs?
    The gate charge (Qg) at 10 V Vgs is 0.7 nC.
  8. What is the input capacitance (Ciss) at 30 V Vds?
    The input capacitance (Ciss) at 30 V Vds is 20 pF.
  9. What are some common applications of the NX138BKW?
    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
  10. Is the NX138BKW RoHS compliant?
    Yes, the NX138BKW is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:265mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.49 nC @ 30 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20.2 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.03
22,342

Please send RFQ , we will respond immediately.

Same Series
NX138BKR
NX138BKR
MOSFET N-CH 60V 265MA TO236AB

Similar Products

Part Number NX138BKVL NX138AKVL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 265mA (Ta) 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 10V 4.5Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.49 nC @ 30 V 1.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20.2 pF @ 30 V 20 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta) 265mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220

Related Product By Brand

BAT854SW,115
BAT854SW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
BZX84-C36,235
BZX84-C36,235
Nexperia USA Inc.
DIODE ZENER 36V 250MW TO236AB
BC847BPN/DG/B2,115
BC847BPN/DG/B2,115
Nexperia USA Inc.
TRANS GEN PURPOSE SC-88
PUMH2/DG/B3,115
PUMH2/DG/B3,115
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
BC869,115
BC869,115
Nexperia USA Inc.
TRANS PNP 20V 1A SOT89
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
PSMN1R4-30YLD/1X
PSMN1R4-30YLD/1X
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY
74LVC240ADB,118
74LVC240ADB,118
Nexperia USA Inc.
IC BUFFER INVERT 3.6V 20SSOP
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
74LVC1G00GW-Q100H
74LVC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74HC04D-Q100,118
74HC04D-Q100,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO