NX138BKR
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Nexperia USA Inc. NX138BKR

Manufacturer No:
NX138BKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 265MA TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The NX138BKR is a power MOSFET produced by Nexperia USA Inc., designed for a variety of applications requiring efficient power management. This N-channel MOSFET is housed in a compact SOT-23 (TO-236AB) package, making it suitable for space-constrained designs. The device features a trench technology construction, which enhances its performance by reducing on-resistance and increasing switching speed.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Continuous Drain Current)265 mA
RDS(on) (On-Resistance)2.1 Ω
VGS(th) (Gate-Source Threshold Voltage)0.5 - 1.5 V
PD (Power Dissipation)340 mW
PackageSOT-23 (TO-236AB), Surface Mount
RoHS StatusRoHS3 Compliant
Lead FreeYes

Key Features

  • Trench technology for low on-resistance and high switching speed.
  • Compact SOT-23 (TO-236AB) package for space-saving designs.
  • High drain-source voltage (VDS) of 60 V.
  • Continuous drain current (ID) of 265 mA.
  • Low on-resistance (RDS(on)) of 2.1 Ω.
  • RoHS3 compliant and lead-free, ensuring environmental friendliness.

Applications

The NX138BKR is suitable for a wide range of applications, including but not limited to:

  • Power switching and power management in consumer electronics.
  • Automotive systems requiring high reliability and efficiency.
  • Industrial control and automation systems.
  • Portable electronics and battery-powered devices.

Q & A

  1. What is the drain-source voltage (VDS) of the NX138BKR?
    The drain-source voltage (VDS) of the NX138BKR is 60 V.
  2. What is the continuous drain current (ID) of the NX138BKR?
    The continuous drain current (ID) of the NX138BKR is 265 mA.
  3. What is the on-resistance (RDS(on)) of the NX138BKR?
    The on-resistance (RDS(on)) of the NX138BKR is 2.1 Ω.
  4. What package type does the NX138BKR use?
    The NX138BKR is housed in a SOT-23 (TO-236AB) package.
  5. Is the NX138BKR RoHS compliant?
    Yes, the NX138BKR is RoHS3 compliant and lead-free.
  6. What are the typical applications of the NX138BKR?
    The NX138BKR is used in power switching, power management in consumer electronics, automotive systems, industrial control, and portable electronics.
  7. What is the power dissipation (PD) of the NX138BKR?
    The power dissipation (PD) of the NX138BKR is 340 mW.
  8. Does the NX138BKR contain hazardous substances?
    No, the NX138BKR does not contain hazardous substances exceeding the limit requirements of GB/T 26572 and is environmentally friendly.
  9. What is the gate-source threshold voltage (VGS(th)) of the NX138BKR?
    The gate-source threshold voltage (VGS(th)) of the NX138BKR is between 0.5 - 1.5 V.
  10. Is the NX138BKR suitable for high-temperature applications?
    The NX138BKR can operate within a range that includes high temperatures, but specific temperature limits should be checked in the datasheet for precise details.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:265mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.49 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20.2 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
NX138BKR
NX138BKR
MOSFET N-CH 60V 265MA TO236AB

Similar Products

Part Number NX138BKR NX138AKR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 265mA (Ta) 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 10V 4.5Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.49 nC @ 4.5 V 1.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20.2 pF @ 30 V 20 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta) 325mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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