NX138BKR
  • Share:

Nexperia USA Inc. NX138BKR

Manufacturer No:
NX138BKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 265MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX138BKR is a power MOSFET produced by Nexperia USA Inc., designed for a variety of applications requiring efficient power management. This N-channel MOSFET is housed in a compact SOT-23 (TO-236AB) package, making it suitable for space-constrained designs. The device features a trench technology construction, which enhances its performance by reducing on-resistance and increasing switching speed.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Continuous Drain Current)265 mA
RDS(on) (On-Resistance)2.1 Ω
VGS(th) (Gate-Source Threshold Voltage)0.5 - 1.5 V
PD (Power Dissipation)340 mW
PackageSOT-23 (TO-236AB), Surface Mount
RoHS StatusRoHS3 Compliant
Lead FreeYes

Key Features

  • Trench technology for low on-resistance and high switching speed.
  • Compact SOT-23 (TO-236AB) package for space-saving designs.
  • High drain-source voltage (VDS) of 60 V.
  • Continuous drain current (ID) of 265 mA.
  • Low on-resistance (RDS(on)) of 2.1 Ω.
  • RoHS3 compliant and lead-free, ensuring environmental friendliness.

Applications

The NX138BKR is suitable for a wide range of applications, including but not limited to:

  • Power switching and power management in consumer electronics.
  • Automotive systems requiring high reliability and efficiency.
  • Industrial control and automation systems.
  • Portable electronics and battery-powered devices.

Q & A

  1. What is the drain-source voltage (VDS) of the NX138BKR?
    The drain-source voltage (VDS) of the NX138BKR is 60 V.
  2. What is the continuous drain current (ID) of the NX138BKR?
    The continuous drain current (ID) of the NX138BKR is 265 mA.
  3. What is the on-resistance (RDS(on)) of the NX138BKR?
    The on-resistance (RDS(on)) of the NX138BKR is 2.1 Ω.
  4. What package type does the NX138BKR use?
    The NX138BKR is housed in a SOT-23 (TO-236AB) package.
  5. Is the NX138BKR RoHS compliant?
    Yes, the NX138BKR is RoHS3 compliant and lead-free.
  6. What are the typical applications of the NX138BKR?
    The NX138BKR is used in power switching, power management in consumer electronics, automotive systems, industrial control, and portable electronics.
  7. What is the power dissipation (PD) of the NX138BKR?
    The power dissipation (PD) of the NX138BKR is 340 mW.
  8. Does the NX138BKR contain hazardous substances?
    No, the NX138BKR does not contain hazardous substances exceeding the limit requirements of GB/T 26572 and is environmentally friendly.
  9. What is the gate-source threshold voltage (VGS(th)) of the NX138BKR?
    The gate-source threshold voltage (VGS(th)) of the NX138BKR is between 0.5 - 1.5 V.
  10. Is the NX138BKR suitable for high-temperature applications?
    The NX138BKR can operate within a range that includes high temperatures, but specific temperature limits should be checked in the datasheet for precise details.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:265mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.49 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20.2 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.23
27

Please send RFQ , we will respond immediately.

Same Series
NX138BKR
NX138BKR
MOSFET N-CH 60V 265MA TO236AB

Similar Products

Part Number NX138BKR NX138AKR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 265mA (Ta) 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 10V 4.5Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.49 nC @ 4.5 V 1.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20.2 pF @ 30 V 20 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta) 325mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3

Related Product By Brand

PRTR5V0U2X,215
PRTR5V0U2X,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
PMEG4010AESBYL
PMEG4010AESBYL
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOD993
PDZ27BZ
PDZ27BZ
Nexperia USA Inc.
DIODE ZENER 26.86V 400MW SOD323
MM3Z3V6T1GX
MM3Z3V6T1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
BC857CQAZ
BC857CQAZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1010D-3
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
HEF4020BT,653
HEF4020BT,653
Nexperia USA Inc.
IC COUNTER BINARY 14STAGE 16SOIC
74AHCT1G04GW-Q100H
74AHCT1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
BAS116H
BAS116H
Nexperia USA Inc.
NOW NEXPERIA BAS116H - RECTIFIER