Overview
The STN1NK80Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to offer high performance and reliability in various power management and switching applications. Available in SOT-223 and TO-92 packages, the STN1NK80Z is optimized for low on-resistance and high dv/dt capability, making it suitable for demanding applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 800 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 0.25 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 0.16 | A |
| Pulsed Drain Current (IDM) | 5 | A |
| Total Power Dissipation at TC = 25 °C | 2.5 | W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 | °C/W |
| Static Drain-Source On-Resistance (RDS(on)) | 13 - 16 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3.0 - 4.5 | V |
| Input Capacitance (Ciss) | - 160 | pF |
| Output Capacitance (Coss) | - 26 | pF |
| Reverse Transfer Capacitance (Crss) | - 6.7 | pF |
| Total Gate Charge (Qg) | - 7.7 | nC |
Key Features
- Zener-protected to enhance reliability and robustness.
- Minimized gate charge for efficient switching performance.
- Very low intrinsic capacitance to reduce switching losses.
- High dv/dt capability for demanding applications.
- Available in SOT-223 and TO-92 packages for flexibility in design.
- 100% avalanche tested to ensure high reliability under stress conditions.
Applications
- Switching applications, including power supplies and DC-DC converters.
- Motor control and drive systems.
- Power management in industrial and automotive systems.
- High-voltage power electronics where reliability and efficiency are critical.
Q & A
- What is the maximum drain-source voltage (VDS) of the STN1NK80Z?
The maximum drain-source voltage (VDS) is 800 V.
- What are the typical and maximum values of the static drain-source on-resistance (RDS(on))?
The typical value is 13 Ω, and the maximum value is 16 Ω.
- What is the continuous drain current (ID) at TC = 25 °C and TC = 100 °C?
The continuous drain current (ID) is 0.25 A at TC = 25 °C and 0.16 A at TC = 100 °C.
- What is the total power dissipation at TC = 25 °C?
The total power dissipation is 2.5 W.
- What are the package options available for the STN1NK80Z?
The device is available in SOT-223 and TO-92 packages.
- What is the thermal resistance, junction-to-ambient (RthJA), of the STN1NK80Z?
The thermal resistance, junction-to-ambient (RthJA), is 50 °C/W.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is from 3.0 V to 4.5 V.
- What are some key features of the STN1NK80Z?
Key features include Zener protection, minimized gate charge, very low intrinsic capacitance, and high dv/dt capability.
- In what types of applications is the STN1NK80Z typically used?
The STN1NK80Z is typically used in switching applications, motor control, power management in industrial and automotive systems, and high-voltage power electronics.
- Is the STN1NK80Z 100% avalanche tested?
Yes, the STN1NK80Z is 100% avalanche tested to ensure high reliability under stress conditions.
