Overview
The STD1NK80ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to offer high performance and reliability in various power management applications. It features a Zener protection mechanism, minimized gate charge, and very low intrinsic capacitance, making it suitable for demanding switching applications. The MOSFET is packaged in a DPAK (TO-252) package, which is environmentally compliant and available in different ECOPACK grades.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 800 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Continuous drain current (ID) at TC = 25 °C | 1 | A |
| Continuous drain current (ID) at TC = 100 °C | 0.63 | A |
| Pulsed drain current (IDM) | 5 | A |
| Total power dissipation (PTOT) at TC = 25 °C | 45 | W |
| Thermal resistance, junction-to-case (RthJC) | 2.78 | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 50 | °C/W |
| Static drain-source on-resistance (RDS(on)) | 13 - 16 | Ω |
| Gate threshold voltage (VGS(th)) | 3.0 - 4.5 | V |
| Total gate charge (Qg) | 7.7 | nC |
Key Features
- Zener-protected to enhance reliability and robustness.
- Minimized gate charge for efficient switching performance.
- Very low intrinsic capacitance to reduce switching losses.
- High dv/dt capability for demanding applications.
- 100% avalanche tested to ensure high reliability.
- Available in DPAK (TO-252) package with ECOPACK compliance.
Applications
- Switching applications, including power supplies and converters.
- Motor control and drive systems.
- High-voltage power management in industrial and automotive systems.
- Uninterruptible power supplies (UPS) and power factor correction (PFC) circuits.
Q & A
- What is the maximum drain-source voltage of the STD1NK80ZT4?
The maximum drain-source voltage (VDS) is 800 V.
- What is the typical on-resistance of the STD1NK80ZT4?
The typical static drain-source on-resistance (RDS(on)) is 13 Ω.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 1 A.
- What is the thermal resistance from junction to case (RthJC)?
The thermal resistance from junction to case (RthJC) is 2.78 °C/W.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(th)) range is 3.0 to 4.5 V.
- What is the total gate charge (Qg)?
The total gate charge (Qg) is 7.7 nC.
- What type of package is the STD1NK80ZT4 available in?
The STD1NK80ZT4 is available in a DPAK (TO-252) package.
- Is the STD1NK80ZT4 environmentally compliant?
- What are some typical applications of the STD1NK80ZT4?
Typical applications include switching power supplies, motor control systems, and high-voltage power management in industrial and automotive systems.
- What technology is used in the development of the STD1NK80ZT4?
The STD1NK80ZT4 is developed using the SuperMESH technology by STMicroelectronics.
