Overview
The STD3NK80ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to offer high performance and reliability in various high-voltage applications. It features a drain-source voltage (VDS) of 800 V, a typical on-resistance (RDS(on)) of 3.6 Ω, and a continuous drain current (ID) of 2.5 A. The MOSFET is packaged in a DPAK (TO-252) package, which is environmentally compliant and available in different ECOPACK grades.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-source voltage (VDS) | 800 | V |
Gate-source voltage (VGS) | ±30 | V |
Continuous drain current (ID) at TC = 25 °C | 2.5 | A |
Continuous drain current (ID) at TC = 100 °C | 1.57 | A |
Pulsed drain current (IDM) | 10 | A |
Total power dissipation at TC = 25 °C | 70 | W |
Thermal resistance, junction-to-case (RthJC) | 1.78 | °C/W |
Thermal resistance, junction-to-ambient (RthJA) | 50 | °C/W |
Drain-source breakdown voltage (V(BR)DSS) | 800 | V |
Zero gate voltage drain current (IDSS) | 1 µA | |
Gate-body leakage current (IGSS) | ±10 µA |
Key Features
- Zener-protected to enhance reliability and robustness.
- 100% avalanche tested to ensure high durability.
- Minimized gate charge for efficient switching.
- Very low intrinsic capacitance to reduce switching losses.
- High dv/dt capability for demanding applications.
- Available in environmentally compliant ECOPACK packages.
Applications
The STD3NK80ZT4 is suitable for a variety of high-voltage switching applications, including but not limited to:
- Power supplies and converters.
- Motor control and drives.
- Industrial automation and control systems.
- Aerospace and defense applications.
- Automotive systems requiring high reliability and performance.
Q & A
- What is the maximum drain-source voltage of the STD3NK80ZT4?
The maximum drain-source voltage (VDS) is 800 V. - What is the typical on-resistance (RDS(on)) of the STD3NK80ZT4?
The typical on-resistance (RDS(on)) is 3.6 Ω. - What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 2.5 A. - What is the thermal resistance, junction-to-case (RthJC), of the STD3NK80ZT4?
The thermal resistance, junction-to-case (RthJC), is 1.78 °C/W. - Is the STD3NK80ZT4 Zener-protected?
Yes, the STD3NK80ZT4 is Zener-protected. - What is the maximum total power dissipation at 25 °C?
The maximum total power dissipation at 25 °C is 70 W. - What are the typical switching times for the STD3NK80ZT4?
The turn-on delay time (td(on)) is typically 17 ns, the rise time (tr) is typically 27 ns, the turn-off delay time (td(off)) is typically 36 ns, and the fall time (tf) is typically 40 ns. - What is the storage temperature range for the STD3NK80ZT4?
The storage temperature range is -55 to 150 °C. - What package types are available for the STD3NK80ZT4?
The STD3NK80ZT4 is available in DPAK (TO-252) packages. - Is the STD3NK80ZT4 environmentally compliant?
Yes, the STD3NK80ZT4 is available in environmentally compliant ECOPACK packages.