STD3NK80ZT4
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STMicroelectronics STD3NK80ZT4

Manufacturer No:
STD3NK80ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 2.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD3NK80ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to offer high performance and reliability in various high-voltage applications. It features a drain-source voltage (VDS) of 800 V, a typical on-resistance (RDS(on)) of 3.6 Ω, and a continuous drain current (ID) of 2.5 A. The MOSFET is packaged in a DPAK (TO-252) package, which is environmentally compliant and available in different ECOPACK grades.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)800V
Gate-source voltage (VGS)±30V
Continuous drain current (ID) at TC = 25 °C2.5A
Continuous drain current (ID) at TC = 100 °C1.57A
Pulsed drain current (IDM)10A
Total power dissipation at TC = 25 °C70W
Thermal resistance, junction-to-case (RthJC)1.78°C/W
Thermal resistance, junction-to-ambient (RthJA)50°C/W
Drain-source breakdown voltage (V(BR)DSS)800V
Zero gate voltage drain current (IDSS)1 µA
Gate-body leakage current (IGSS)±10 µA

Key Features

  • Zener-protected to enhance reliability and robustness.
  • 100% avalanche tested to ensure high durability.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitance to reduce switching losses.
  • High dv/dt capability for demanding applications.
  • Available in environmentally compliant ECOPACK packages.

Applications

The STD3NK80ZT4 is suitable for a variety of high-voltage switching applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • Aerospace and defense applications.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STD3NK80ZT4?
    The maximum drain-source voltage (VDS) is 800 V.
  2. What is the typical on-resistance (RDS(on)) of the STD3NK80ZT4?
    The typical on-resistance (RDS(on)) is 3.6 Ω.
  3. What is the continuous drain current (ID) at 25 °C?
    The continuous drain current (ID) at 25 °C is 2.5 A.
  4. What is the thermal resistance, junction-to-case (RthJC), of the STD3NK80ZT4?
    The thermal resistance, junction-to-case (RthJC), is 1.78 °C/W.
  5. Is the STD3NK80ZT4 Zener-protected?
    Yes, the STD3NK80ZT4 is Zener-protected.
  6. What is the maximum total power dissipation at 25 °C?
    The maximum total power dissipation at 25 °C is 70 W.
  7. What are the typical switching times for the STD3NK80ZT4?
    The turn-on delay time (td(on)) is typically 17 ns, the rise time (tr) is typically 27 ns, the turn-off delay time (td(off)) is typically 36 ns, and the fall time (tf) is typically 40 ns.
  8. What is the storage temperature range for the STD3NK80ZT4?
    The storage temperature range is -55 to 150 °C.
  9. What package types are available for the STD3NK80ZT4?
    The STD3NK80ZT4 is available in DPAK (TO-252) packages.
  10. Is the STD3NK80ZT4 environmentally compliant?
    Yes, the STD3NK80ZT4 is available in environmentally compliant ECOPACK packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:485 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD3NK80ZT4 STD4NK80ZT4 STD3NK90ZT4 STD1NK80ZT4 STD3NK50ZT4 STD3NK60ZT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 900 V 800 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 3A (Tc) 3A (Tc) 1A (Tc) 2.3A (Tc) 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 1.25A, 10V 3.5Ohm @ 1.5A, 10V 4.8Ohm @ 1.5A, 10V 16Ohm @ 500mA, 10V 3.3Ohm @ 1.15A, 10V 3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 22.5 nC @ 10 V 22.7 nC @ 10 V 7.7 nC @ 10 V 15 nC @ 10 V 11.8 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 25 V 575 pF @ 25 V 590 pF @ 25 V 160 pF @ 25 V 280 pF @ 25 V 311 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 70W (Tc) 80W (Tc) 90W (Tc) 45W (Tc) 45W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK TO-252 (D-Pak) DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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