Overview
The STD4NK80ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is optimized from the well-established PowerMESH layout, offering significant improvements in on-resistance and dv/dt capability. The STD4NK80ZT4 is designed for demanding applications, featuring a Zener-protected gate and minimized gate charge, which enhance its reliability and performance. It is packaged in a DPAK (TO-252) package, making it suitable for a variety of high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 800 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 3 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 1.89 | A |
| Pulsed Drain Current (IDM) | 12 | A |
| Total Power Dissipation at TC = 25 °C | 80 | W |
| On-Resistance (RDS(on)) | 3.5 Ω (max), 2.7 Ω (typ) | Ω |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.56 °C/W | °C/W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 °C/W | °C/W |
| Storage Temperature Range | -55 to 150 °C | °C |
Key Features
- High-voltage operation with a drain-source voltage of 800 V
- Low on-resistance (RDS(on)) of 3.5 Ω (max) and 2.7 Ω (typ)
- High continuous drain current of 3 A at TC = 25 °C
- 100% avalanche tested for reliability
- Minimized gate charge for efficient switching
- Very low intrinsic capacitance
- Zener-protected gate for enhanced protection
- Excellent dv/dt capability for demanding applications
Applications
- High-power switching applications
- Power supplies and DC-DC converters
- Motor control and drive systems
- Industrial automation and control systems
- High-voltage power management systems
Q & A
- What is the maximum drain-source voltage of the STD4NK80ZT4?
The maximum drain-source voltage (VDS) is 800 V.
- What is the typical on-resistance (RDS(on)) of the STD4NK80ZT4?
The typical on-resistance (RDS(on)) is 2.7 Ω.
- What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 3 A.
- What is the thermal resistance, junction-to-case (RthJC), of the STD4NK80ZT4?
The thermal resistance, junction-to-case (RthJC), is 1.56 °C/W.
- Is the STD4NK80ZT4 100% avalanche tested?
- What is the package type of the STD4NK80ZT4?
The package type is DPAK (TO-252).
- What are the key features of the SuperMESH technology used in the STD4NK80ZT4?
The SuperMESH technology offers low on-resistance, minimized gate charge, very low intrinsic capacitance, and excellent dv/dt capability.
- What are some common applications of the STD4NK80ZT4?
Common applications include high-power switching, power supplies, motor control, industrial automation, and high-voltage power management.
- What is the storage temperature range for the STD4NK80ZT4?
The storage temperature range is -55 to 150 °C.
- Does the STD4NK80ZT4 have Zener protection for the gate?
