STD4NK50ZT4
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STMicroelectronics STD4NK50ZT4

Manufacturer No:
STD4NK50ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD4NK50ZT4 is a high-voltage, Zener-protected N-channel Power MOSFET developed by STMicroelectronics using the SuperMESH™ technology. This device is an optimization of the well-established PowerMESH™ technology, offering significant reductions in on-resistance and enhanced dv/dt capability. It is available in the DPAK package and is designed for the most demanding switching applications.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 500 V
Gate-source voltage (VGS) ±30 V
Drain current (continuous) at TC = 25 °C (ID) 3 A
Drain current (continuous) at TC = 100 °C (ID) 1.9 A
Pulsed drain current (IDM) 12 A
Total power dissipation at TC = 25 °C (PTOT) 45 W
On-resistance (RDS(on)) 2.7 Ω
Peak diode recovery voltage slope (dv/dt) 4.5 V/ns
Gate-source ESD (human body model) 2.8 kV kV
Operating junction temperature range (Tj) -55 to 150 °C
Thermal resistance junction-case (Rthj-case) 2.78 °C/W
Thermal resistance junction-ambient (Rthj-amb) 100 °C/W

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Zener-protected for enhanced ESD performance

Applications

The STD4NK50ZT4 is primarily used in switching applications, including but not limited to:

  • Power supplies
  • Motor control
  • High-frequency switching circuits
  • Industrial and automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD4NK50ZT4?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the typical on-resistance (RDS(on)) of the STD4NK50ZT4?

    The typical on-resistance (RDS(on)) is 2.7 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 3 A.

  4. What is the peak diode recovery voltage slope (dv/dt) of the STD4NK50ZT4?

    The peak diode recovery voltage slope (dv/dt) is 4.5 V/ns.

  5. What is the thermal resistance junction-case (Rthj-case) of the STD4NK50ZT4 in the DPAK package?

    The thermal resistance junction-case (Rthj-case) is 2.78 °C/W.

  6. Is the STD4NK50ZT4 Zener-protected?
  7. What are the primary applications of the STD4NK50ZT4?

    The primary applications include switching applications such as power supplies, motor control, and high-frequency switching circuits.

  8. What is the operating junction temperature range of the STD4NK50ZT4?

    The operating junction temperature range is -55 to 150 °C.

  9. What is the total gate charge (Qg) of the STD4NK50ZT4?

    The total gate charge (Qg) is 12 nC.

  10. Is the STD4NK50ZT4 100% avalanche tested?
  11. What package types are available for the STD4NK50ZT4?

    The STD4NK50ZT4 is available in the DPAK package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STD4NK50ZT4
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STD4NK50Z-1
STD4NK50Z-1
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Similar Products

Part Number STD4NK50ZT4 STD6NK50ZT4 STD4NK80ZT4 STD4NK60ZT4 STD5NK50ZT4 STD3NK50ZT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Not For New Designs Active Not For New Designs Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 800 V 600 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 5.6A (Tc) 3A (Tc) 4A (Tc) 4.4A (Tc) 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.7Ohm @ 1.5A, 10V 1.2Ohm @ 2.8A, 10V 3.5Ohm @ 1.5A, 10V 2Ohm @ 2A, 10V 1.5Ohm @ 2.2A, 10V 3.3Ohm @ 1.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 24.6 nC @ 10 V 22.5 nC @ 10 V 26 nC @ 10 V 28 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25 V 690 pF @ 25 V 575 pF @ 25 V 510 pF @ 25 V 535 pF @ 25 V 280 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 45W (Tc) 90W (Tc) 80W (Tc) 70W (Tc) 70W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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