Overview
The STP4NK50Z is a high-performance N-channel Power MOSFET produced by STMicroelectronics. It is part of the SuperMESH™ series, which is optimized for high voltage and high current applications. This MOSFET is designed with an advanced strip-based PowerMESH™ layout, ensuring low on-resistance and excellent dv/dt capability. The device is available in various packages, including TO-220, TO-220FP, DPAK, and IPAK, making it versatile for different design needs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VBRDSS) | 500 | V |
| Static Drain-Source On Resistance (RDS(on)) | < 2.7 | Ω |
| Drain Current (ID) | 3 | A |
| Gate Threshold Voltage (VGS(th)) | 3 - 4.5 | V |
| Gate-Source Leakage Current (IGSS) | ±10 | µA |
| Input Capacitance (Ciss) | 310 | pF |
| Output Capacitance (Coss) | 49 | pF |
| Reverse Transfer Capacitance (Crss) | 10 | pF |
| Turn-on Delay Time (td(on)) | 10 | ns |
| Turn-off Delay Time (td(off)) | 21 | ns |
| Total Gate Charge (Qg) | 12 | nC |
Key Features
- Low On-Resistance: The STP4NK50Z features a low static drain-source on resistance (RDS(on)) of less than 2.7 Ω, making it suitable for high-efficiency applications.
- High dv/dt Capability: The device is designed to handle high dv/dt rates, ensuring robust performance in demanding applications.
- 100% Avalanche Tested: The MOSFET is thoroughly tested for avalanche ruggedness, enhancing its reliability in harsh environments.
- Gate Charge Minimized: The total gate charge is minimized, which helps in reducing the switching losses and improving the overall efficiency of the system.
- Integrated Zener Diodes: Built-in back-to-back Zener diodes provide enhanced ESD protection and absorb voltage transients, eliminating the need for external components.
- Low Intrinsic Capacitances: The device has very low intrinsic capacitances, which is beneficial for high-speed switching applications.
Applications
- High Current, High Speed Switching: Ideal for applications requiring high current and fast switching times.
- Off-Line Power Supplies: Suitable for use in off-line power supplies, adaptors, and power factor correction (PFC) circuits.
- Lighting Systems: Can be used in various lighting systems due to its high efficiency and reliability.
Q & A
- What is the maximum drain-source breakdown voltage of the STP4NK50Z?
The maximum drain-source breakdown voltage (VBRDSS) is 500 V.
- What is the typical on-resistance of the STP4NK50Z?
The typical static drain-source on resistance (RDS(on)) is 2.3 Ω.
- What is the maximum drain current of the STP4NK50Z?
The maximum drain current (ID) is 3 A.
- What are the package options available for the STP4NK50Z?
The device is available in TO-220, TO-220FP, DPAK, and IPAK packages.
- Does the STP4NK50Z have built-in protection features?
Yes, it has built-in back-to-back Zener diodes for ESD protection and to absorb voltage transients.
- What is the gate threshold voltage range of the STP4NK50Z?
The gate threshold voltage (VGS(th)) ranges from 3 to 4.5 V.
- What are the typical turn-on and turn-off delay times of the STP4NK50Z?
The typical turn-on delay time (td(on)) is 10 ns, and the typical turn-off delay time (td(off)) is 21 ns.
- Is the STP4NK50Z suitable for high-speed switching applications?
Yes, it is designed for high-speed switching with low intrinsic capacitances and high dv/dt capability.
- What are some common applications of the STP4NK50Z?
Common applications include off-line power supplies, adaptors, PFC circuits, and lighting systems.
- Has the STP4NK50Z been tested for avalanche ruggedness?
Yes, the device is 100% avalanche tested to ensure its reliability in harsh environments.
