Overview
The STP4NK60Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed to offer high performance and reliability in various switching applications. It features a low on-resistance of 1.7 Ω (typical) and a high drain current of 4 A, making it suitable for demanding applications that require high dv/dt capability.
The STP4NK60Z is available in TO-220 and TO-220FP packages, ensuring versatility in different design requirements. The integrated Zener diodes enhance the device’s ESD capability and protect against voltage transients, eliminating the need for external components.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 4 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 2.5 | A |
| Drain current (pulsed) (IDM) | 16 | A |
| Total power dissipation at TC = 25 °C (PTOT) | 70 | W |
| Static drain-source on-resistance (RDS(on)) | 1.7 | Ω |
| Thermal resistance junction-case (Rthj-case) | 1.79 | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 62.5 | °C/W |
| Avalanche current (IAR) | 4 | A |
| Single pulse avalanche energy (EAS) | 120 | mJ |
Key Features
- 100% avalanche tested to ensure robustness against high-energy pulses.
- Very low intrinsic capacitances, which reduce switching losses and improve efficiency.
- Zener-protected to enhance ESD capability and protect against voltage transients.
- Low on-resistance (RDS(on)) of 1.7 Ω (typical) for reduced power losses.
- High dv/dt capability, making it suitable for demanding applications.
- Available in TO-220 and TO-220FP packages for design flexibility.
- Integrated back-to-back Zener diodes to eliminate the need for external protection components.
Applications
The STP4NK60Z is designed for various high-voltage switching applications, including:
- Power supplies and converters.
- Motor control and drives.
- High-frequency switching circuits.
- Aerospace and automotive systems requiring high reliability and performance.
- Industrial control and automation systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP4NK60Z?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STP4NK60Z?
The typical on-resistance (RDS(on)) is 1.7 Ω.
- What are the package options for the STP4NK60Z?
The STP4NK60Z is available in TO-220 and TO-220FP packages.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 4 A.
- Does the STP4NK60Z have built-in protection against voltage transients?
- What is the thermal resistance junction-case (Rthj-case) of the STP4NK60Z?
The thermal resistance junction-case (Rthj-case) is 1.79 °C/W.
- What is the single pulse avalanche energy (EAS) of the STP4NK60Z?
The single pulse avalanche energy (EAS) is 120 mJ.
- Is the STP4NK60Z 100% avalanche tested?
- What are some typical applications of the STP4NK60Z?
Typical applications include power supplies, motor control, high-frequency switching circuits, aerospace, automotive systems, and industrial control systems.
- What is the maximum operating junction temperature (TJ) of the STP4NK60Z?
The maximum operating junction temperature (TJ) is 150 °C.
