STP6NK60Z
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STMicroelectronics STP6NK60Z

Manufacturer No:
STP6NK60Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 6A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP6NK60Z is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STP6NK60Z is designed for demanding applications requiring high reliability and efficiency.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Drain Current (continuous) at TC = 25 °C 6 A
Drain Current (continuous) at TC = 100 °C 3.8 A
Pulse Drain Current (IDM) 24 A
Total Dissipation at TC = 25 °C 110 W
On-Resistance (RDS(on)) < 1.2 Ω
Thermal Resistance Junction-Case (Rthj-case) 1.14 °C/W
Operating Junction Temperature (Tj) -55 to 150 °C
Gate Charge (Qg) 46 nC
Turn-On Delay Time (td(on)) 14 ns
Turn-Off Delay Time (td(off)) 47 ns

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Minimized gate charge for efficient switching.
  • Integrated gate-source Zener diodes for enhanced ESD protection and transient voltage absorption.
  • Available in various packages including TO-220, TO-220FP, D²PAK, and I²PAK.
  • ECOPACK® packages with lead-free second level interconnect, meeting environmental requirements.

Applications

  • Switching applications, including power supplies, motor control, and power management systems.
  • High-frequency switching circuits where low on-resistance and high dv/dt capability are crucial.
  • Aerospace and automotive systems requiring high reliability and robustness.
  • Industrial control and automation systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP6NK60Z?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current at 25 °C for the STP6NK60Z?

    The continuous drain current at 25 °C is 6 A.

  3. What is the on-resistance (RDS(on)) of the STP6NK60Z?

    The on-resistance (RDS(on)) is less than 1.2 Ω.

  4. What are the thermal resistance values for the STP6NK60Z?

    The thermal resistance junction-case (Rthj-case) is 1.14 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.

  5. Does the STP6NK60Z have built-in protection features?

    Yes, it has integrated gate-source Zener diodes for enhanced ESD protection and transient voltage absorption.

  6. What are the typical applications of the STP6NK60Z?

    Typical applications include switching power supplies, motor control, and high-frequency switching circuits.

  7. What packages are available for the STP6NK60Z?

    The device is available in TO-220, TO-220FP, D²PAK, and I²PAK packages.

  8. Is the STP6NK60Z environmentally friendly?

    Yes, it is available in ECOPACK® packages with lead-free second level interconnect, meeting environmental requirements.

  9. What is the maximum operating junction temperature for the STP6NK60Z?

    The maximum operating junction temperature is 150 °C.

  10. What is the gate charge (Qg) of the STP6NK60Z?

    The total gate charge (Qg) is 46 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:905 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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MOSFET N-CH 600V 6A TO220AB
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MOSFET N-CH 600V 6A TO220FP
STB6NK60Z-1
STB6NK60Z-1
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Similar Products

Part Number STP6NK60Z STP9NK60Z STP6NK90Z STP6NK70Z STP4NK60Z STP5NK60Z STP6NK50Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active Active Obsolete Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 900 V 700 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 7A (Tc) 5.8A (Tc) 5A (Tc) 4A (Tc) 5A (Tc) 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 950mOhm @ 3.5A, 10V 2Ohm @ 2.9A, 10V 1.8Ohm @ 2.5A, 10V 2Ohm @ 2A, 10V 1.6Ohm @ 2.5A, 10V 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 53 nC @ 10 V 60.5 nC @ 10 V 47 nC @ 10 V 26 nC @ 10 V 34 nC @ 10 V 24.6 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 905 pF @ 25 V 1110 pF @ 25 V 1350 pF @ 25 V 930 pF @ 25 V 510 pF @ 25 V 690 pF @ 25 V 690 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 110W (Tc) 125W (Tc) 140W (Tc) 110W (Tc) 70W (Tc) 90W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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