Overview
The STP6NK60Z is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STP6NK60Z is designed for demanding applications requiring high reliability and efficiency.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDS) | 600 | V |
Gate-Source Voltage (VGS) | ±30 | V |
Drain Current (continuous) at TC = 25 °C | 6 | A |
Drain Current (continuous) at TC = 100 °C | 3.8 | A |
Pulse Drain Current (IDM) | 24 | A |
Total Dissipation at TC = 25 °C | 110 | W |
On-Resistance (RDS(on)) | < 1.2 | Ω |
Thermal Resistance Junction-Case (Rthj-case) | 1.14 | °C/W |
Operating Junction Temperature (Tj) | -55 to 150 | °C |
Gate Charge (Qg) | 46 | nC |
Turn-On Delay Time (td(on)) | 14 | ns |
Turn-Off Delay Time (td(off)) | 47 | ns |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested, ensuring robustness against transient conditions.
- Minimized gate charge for efficient switching.
- Integrated gate-source Zener diodes for enhanced ESD protection and transient voltage absorption.
- Available in various packages including TO-220, TO-220FP, D²PAK, and I²PAK.
- ECOPACK® packages with lead-free second level interconnect, meeting environmental requirements.
Applications
- Switching applications, including power supplies, motor control, and power management systems.
- High-frequency switching circuits where low on-resistance and high dv/dt capability are crucial.
- Aerospace and automotive systems requiring high reliability and robustness.
- Industrial control and automation systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP6NK60Z?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current at 25 °C for the STP6NK60Z?
The continuous drain current at 25 °C is 6 A.
- What is the on-resistance (RDS(on)) of the STP6NK60Z?
The on-resistance (RDS(on)) is less than 1.2 Ω.
- What are the thermal resistance values for the STP6NK60Z?
The thermal resistance junction-case (Rthj-case) is 1.14 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.
- Does the STP6NK60Z have built-in protection features?
Yes, it has integrated gate-source Zener diodes for enhanced ESD protection and transient voltage absorption.
- What are the typical applications of the STP6NK60Z?
Typical applications include switching power supplies, motor control, and high-frequency switching circuits.
- What packages are available for the STP6NK60Z?
The device is available in TO-220, TO-220FP, D²PAK, and I²PAK packages.
- Is the STP6NK60Z environmentally friendly?
Yes, it is available in ECOPACK® packages with lead-free second level interconnect, meeting environmental requirements.
- What is the maximum operating junction temperature for the STP6NK60Z?
The maximum operating junction temperature is 150 °C.
- What is the gate charge (Qg) of the STP6NK60Z?
The total gate charge (Qg) is 46 nC.