FDMA430NZ
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onsemi FDMA430NZ

Manufacturer No:
FDMA430NZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5A 6MICROFET
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The FDMA430NZ is a single N-Channel MOSFET designed by onsemi, utilizing an advanced Power Trench process. This MOSFET is optimized for low RDS(on) at VGS=2.5V and is housed in a special MicroFET leadframe, enhancing its performance and reliability. It is part of onsemi's low to medium voltage MOSFET family, known for its robust switching performance and ruggedness.

Key Specifications

ParameterValue
Voltage Rating (Vds)30V
Current Rating (Id)5A
RDS(on) @ VGS=2.5VTypically optimized for low RDS(on)
Power Dissipation (Pd)2.4W
Package TypeMicroFET

Key Features

  • Low RDS(on) at VGS=2.5V for efficient switching performance
  • Rugged and reliable design using advanced Power Trench process
  • Dual-protected with temperature and current limit features
  • Optimized for low-side smart, discrete applications

Applications

The FDMA430NZ MOSFET is suitable for a variety of applications requiring low to medium voltage and high current handling. These include but are not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control circuits
  • Switching power supplies

Q & A

  1. What is the voltage rating of the FDMA430NZ MOSFET?
    The voltage rating (Vds) of the FDMA430NZ MOSFET is 30V.
  2. What is the current rating of the FDMA430NZ MOSFET?
    The current rating (Id) of the FDMA430NZ MOSFET is 5A.
  3. What is the typical RDS(on) of the FDMA430NZ MOSFET at VGS=2.5V?
    The RDS(on) is typically optimized for low values at VGS=2.5V.
  4. What is the power dissipation of the FDMA430NZ MOSFET?
    The power dissipation (Pd) of the FDMA430NZ MOSFET is 2.4W.
  5. What package type does the FDMA430NZ MOSFET use?
    The FDMA430NZ MOSFET is housed in a MicroFET leadframe.
  6. What are the key features of the FDMA430NZ MOSFET?
    The key features include low RDS(on) at VGS=2.5V, rugged and reliable design, and dual protection with temperature and current limits.
  7. What are some common applications of the FDMA430NZ MOSFET?
    Common applications include power management systems, DC-DC converters, motor control circuits, and switching power supplies.
  8. Why is the FDMA430NZ MOSFET considered robust?
    The FDMA430NZ MOSFET is considered robust due to its advanced Power Trench process and dual protection features.
  9. Where can I find detailed specifications for the FDMA430NZ MOSFET?
    Detailed specifications can be found on the official onsemi website, as well as on distributor sites like Mouser, Digi-Key, and TME.
  10. Is the FDMA430NZ MOSFET suitable for high-frequency applications?
    Yes, the FDMA430NZ MOSFET is optimized for low RDS(on) and is suitable for high-frequency switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:40mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-WDFN Exposed Pad
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Similar Products

Part Number FDMA430NZ FDMA410NZ FDMA420NZ
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 9.5A (Ta) 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 1.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 40mOhm @ 5A, 4.5V 23mOhm @ 9.5A, 4.5V 30mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V 14 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) ±12V ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 10 V 1080 pF @ 10 V 935 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 2.4W (Ta) 2.4W (Ta) 2.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-MicroFET (2x2) 6-MicroFET (2x2) 6-MicroFET (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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