FCD3400N80Z
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onsemi FCD3400N80Z

Manufacturer No:
FCD3400N80Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 2A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCD3400N80Z is a high-performance power MOSFET produced by ON Semiconductor. This device is designed for high-voltage and high-power applications, particularly in the context of electric vehicle (EV) charging systems and other power conversion circuits.

It is part of a comprehensive solution for on-board chargers (OBCs) and other power electronics, offering advanced features and robust performance characteristics.

Key Specifications

Parameter Value
Drain-Source Voltage (Vds) 800 V
Drain Current (Id) Typically 20 A
On-Resistance (Rds(on)) Typically 2.75 Ω
Package Type DPAK
Operating Junction Temperature Range -55°C to 150°C
Gate-Source Threshold Voltage (Vgs(th)) Typically 3.5 V

Key Features

  • High Voltage and Current Capability: The FCD3400N80Z is capable of handling high drain-source voltages up to 800 V and high drain currents, making it suitable for demanding power conversion applications.
  • Low On-Resistance: With a typical on-resistance of 2.75 Ω, this MOSFET minimizes power losses and enhances overall system efficiency.
  • DPAK Package: The DPAK package provides a compact and thermally efficient design, suitable for high-power density applications.
  • Wide Operating Temperature Range: The device operates over a wide junction temperature range, ensuring reliability in various environmental conditions.

Applications

  • Electric Vehicle Charging Systems: The FCD3400N80Z is particularly suited for on-board chargers (OBCs) in electric vehicles, where high efficiency and reliability are critical.
  • Power Conversion Circuits: It is used in various power conversion stages, including power factor correction (PFC) and DC-DC conversion.
  • Industrial Power Supplies: The device is also applicable in high-power industrial power supplies where high voltage and current handling are required.

Q & A

  1. What is the maximum drain-source voltage of the FCD3400N80Z?

    The maximum drain-source voltage (Vds) is 800 V.

  2. What is the typical on-resistance of the FCD3400N80Z?

    The typical on-resistance (Rds(on)) is 2.75 Ω.

  3. What package type is the FCD3400N80Z available in?

    The FCD3400N80Z is available in the DPAK package.

  4. What is the operating junction temperature range of the FCD3400N80Z?

    The operating junction temperature range is -55°C to 150°C.

  5. What are some common applications of the FCD3400N80Z?

    Common applications include electric vehicle charging systems, power conversion circuits, and industrial power supplies.

  6. How does the FCD3400N80Z contribute to system efficiency?

    The low on-resistance of the FCD3400N80Z minimizes power losses, thereby enhancing overall system efficiency.

  7. What is the significance of the DPAK package for the FCD3400N80Z?

    The DPAK package provides a compact and thermally efficient design, which is crucial for high-power density applications.

  8. Can the FCD3400N80Z be used in high-temperature environments?

    Yes, the device operates over a wide junction temperature range, ensuring reliability in various environmental conditions.

  9. How does the FCD3400N80Z handle high current requirements?

    The FCD3400N80Z is capable of handling high drain currents, making it suitable for demanding power conversion applications.

  10. What are the key benefits of using the FCD3400N80Z in EV charging systems?

    The key benefits include high efficiency, reliability, and the ability to handle high voltage and current, which are critical for on-board chargers in electric vehicles.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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