Overview
The STB100N10F7 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. It utilizes the advanced STripFET F7 technology, which features an enhanced trench gate structure. This technology results in very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching. The MOSFET is packaged in a D2PAK case, making it suitable for a variety of power management applications.
Key Specifications
| Parameter | Value |
|---|---|
| Type of transistor | N-MOSFET |
| Technology | STripFET™ F7 |
| Polarisation | unipolar |
| Drain-source voltage | 100V |
| Drain current | 70A |
| Pulsed drain current | 320A |
| Power dissipation | 150W |
| Case | D2PAK |
| Gate-source voltage | ±20V |
| On-state resistance | 8mΩ (typ.) |
| Mounting | SMD |
| Gate charge | 61nC |
| Kind of package | reel, tape |
| Kind of channel | enhanced |
Key Features
- Ultra low on-state resistance of 8mΩ, enhancing efficiency in power management.
- 100% avalanche tested, ensuring robustness and reliability.
- Reduced internal capacitance and gate charge for faster switching times.
- Enhanced trench gate structure from STripFET F7 technology.
- High pulsed drain current of 320A, suitable for high-power applications.
Applications
The STB100N10F7 is designed for various high-power applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drives.
- Industrial and automotive systems requiring high efficiency and reliability.
- Switch-mode power supplies.
Q & A
- What is the drain-source voltage of the STB100N10F7?
The drain-source voltage of the STB100N10F7 is 100V. - What is the typical on-state resistance of the STB100N10F7?
The typical on-state resistance is 8mΩ. - What is the maximum drain current of the STB100N10F7?
The maximum drain current is 70A, with a pulsed drain current of 320A. - What package type is the STB100N10F7 available in?
The STB100N10F7 is available in a D2PAK package. - What is the gate-source voltage range for the STB100N10F7?
The gate-source voltage range is ±20V. - What technology does the STB100N10F7 use?
The STB100N10F7 uses STripFET F7 technology. - What are the key benefits of the STripFET F7 technology?
The key benefits include ultra low on-state resistance, reduced internal capacitance, and lower gate charge for faster switching. - Is the STB100N10F7 suitable for high-power applications?
Yes, the STB100N10F7 is suitable for high-power applications due to its high pulsed drain current and low on-state resistance. - What are some common applications for the STB100N10F7?
Common applications include power supplies, motor control, industrial and automotive systems, and switch-mode power supplies. - Is the STB100N10F7 100% avalanche tested?
Yes, the STB100N10F7 is 100% avalanche tested.
