STF100N10F7
  • Share:

STMicroelectronics STF100N10F7

Manufacturer No:
STF100N10F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N CH 100V 45A TO-220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF100N10F7 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET F7 technology. This device features an enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. These characteristics enable faster and more efficient switching, making it ideal for various high-performance applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)100V
Gate-Source Voltage (VGS)±20V
Drain Current (continuous) at TC = 25°C45A
Drain Current (continuous) at TC = 100°C32A
Drain Current (pulsed)180A
Total Dissipation at Tpcb = 25°C30W
Operating Junction Temperature-55 to 175°C
Static Drain-Source On-Resistance (RDS(on))0.008 Ω (typ.)Ω
PackageTO-220FP

Key Features

  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness
  • Ultra low on-resistance
  • 100% avalanche tested

Applications

The STF100N10F7 is primarily used in switching applications, where its low on-state resistance, high current handling, and efficient switching capabilities are highly beneficial.

Q & A

  1. What is the maximum drain-source voltage of the STF100N10F7?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the typical on-state resistance of the STF100N10F7?
    The typical on-state resistance (RDS(on)) is 0.008 Ω.
  3. What is the maximum continuous drain current at 25°C for the STF100N10F7?
    The maximum continuous drain current at 25°C is 45 A.
  4. What is the operating junction temperature range for the STF100N10F7?
    The operating junction temperature range is -55 to 175°C.
  5. What package type is the STF100N10F7 available in?
    The STF100N10F7 is available in the TO-220FP package.
  6. What are the key benefits of using STripFET F7 technology in the STF100N10F7?
    The key benefits include very low on-state resistance, reduced internal capacitance, and faster and more efficient switching.
  7. Is the STF100N10F7 100% avalanche tested?
    Yes, the STF100N10F7 is 100% avalanche tested.
  8. What is the total dissipation at Tpcb = 25°C for the STF100N10F7?
    The total dissipation at Tpcb = 25°C is 30 W.
  9. What is the gate-source voltage range for the STF100N10F7?
    The gate-source voltage (VGS) range is ±20 V.
  10. What are the typical applications for the STF100N10F7?
    The typical applications include switching applications where high efficiency and low on-state resistance are required.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4369 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.84
261

Please send RFQ , we will respond immediately.

Same Series
STD100N10F7
STD100N10F7
MOSFET N CH 100V 80A DPAK
STB100N10F7
STB100N10F7
MOSFET N-CH 100V 80A D2PAK
STP100N10F7
STP100N10F7
MOSFET N CH 100V 80A TO-220

Similar Products

Part Number STF100N10F7 STF150N10F7 STF110N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Last Time Buy Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 65A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 22.5A, 10V 4.2mOhm @ 55A, 10V 7mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V 117 nC @ 10 V 72 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4369 pF @ 50 V 8115 pF @ 50 V 5117 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 35W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STN1NF20
STN1NF20
STMicroelectronics
MOSFET N-CH 200V 1A SOT-223
STM32L071RZT6
STM32L071RZT6
STMicroelectronics
IC MCU 32BIT 192KB FLASH 64LQFP
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT