STF100N10F7
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STMicroelectronics STF100N10F7

Manufacturer No:
STF100N10F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N CH 100V 45A TO-220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF100N10F7 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET F7 technology. This device features an enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. These characteristics enable faster and more efficient switching, making it ideal for various high-performance applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)100V
Gate-Source Voltage (VGS)±20V
Drain Current (continuous) at TC = 25°C45A
Drain Current (continuous) at TC = 100°C32A
Drain Current (pulsed)180A
Total Dissipation at Tpcb = 25°C30W
Operating Junction Temperature-55 to 175°C
Static Drain-Source On-Resistance (RDS(on))0.008 Ω (typ.)Ω
PackageTO-220FP

Key Features

  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness
  • Ultra low on-resistance
  • 100% avalanche tested

Applications

The STF100N10F7 is primarily used in switching applications, where its low on-state resistance, high current handling, and efficient switching capabilities are highly beneficial.

Q & A

  1. What is the maximum drain-source voltage of the STF100N10F7?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the typical on-state resistance of the STF100N10F7?
    The typical on-state resistance (RDS(on)) is 0.008 Ω.
  3. What is the maximum continuous drain current at 25°C for the STF100N10F7?
    The maximum continuous drain current at 25°C is 45 A.
  4. What is the operating junction temperature range for the STF100N10F7?
    The operating junction temperature range is -55 to 175°C.
  5. What package type is the STF100N10F7 available in?
    The STF100N10F7 is available in the TO-220FP package.
  6. What are the key benefits of using STripFET F7 technology in the STF100N10F7?
    The key benefits include very low on-state resistance, reduced internal capacitance, and faster and more efficient switching.
  7. Is the STF100N10F7 100% avalanche tested?
    Yes, the STF100N10F7 is 100% avalanche tested.
  8. What is the total dissipation at Tpcb = 25°C for the STF100N10F7?
    The total dissipation at Tpcb = 25°C is 30 W.
  9. What is the gate-source voltage range for the STF100N10F7?
    The gate-source voltage (VGS) range is ±20 V.
  10. What are the typical applications for the STF100N10F7?
    The typical applications include switching applications where high efficiency and low on-state resistance are required.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4369 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STF100N10F7
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MOSFET N CH 100V 45A TO-220FP
STD100N10F7
STD100N10F7
MOSFET N CH 100V 80A DPAK
STP100N10F7
STP100N10F7
MOSFET N CH 100V 80A TO-220

Similar Products

Part Number STF100N10F7 STF150N10F7 STF110N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Last Time Buy Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 65A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 22.5A, 10V 4.2mOhm @ 55A, 10V 7mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V 117 nC @ 10 V 72 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4369 pF @ 50 V 8115 pF @ 50 V 5117 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 35W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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