Overview
The STP100N10F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET F7 technology. This device is characterized by its ultra-low on-state resistance and enhanced trench gate structure, which results in faster and more efficient switching. Available in the TO-220 package, it is designed to meet the demands of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 100 | V |
| RDS(on) (On-State Resistance) - Max. | 8.0 mΩ | mΩ |
| ID (Drain Current) - Continuous | 80 A | A |
| ID (Drain Current) - Pulsed | 320 A | A |
| VGS(th) (Gate-Source Threshold Voltage) | 2.5 V @ 250 µA | V |
| Ciss (Input Capacitance) | 4369 pF | pF |
| Coss (Output Capacitance) | 823 pF | pF |
| Crss (Reverse Transfer Capacitance) | 36 pF | pF |
| Qg (Total Gate Charge) | 61 nC | nC |
| td(on) (Turn-on Delay Time) | 27 ns | ns |
| tr (Rise Time) | 40 ns | ns |
| td(off) (Turn-off Delay Time) | 46 ns | ns |
| tf (Fall Time) | 15 ns | ns |
| Package | TO-220 |
Key Features
- Ultra-low on-state resistance (RDS(on)) of 6.8 mΩ typical at VGS = 10 V and ID = 40 A.
- Excellent figure of merit (FoM) for high efficiency in switching applications.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness, ensuring reliability under harsh conditions.
- Enhanced trench gate structure for faster switching times and reduced internal capacitance and gate charge.
Applications
- Switching applications, including power supplies, motor drives, and DC-DC converters.
- High-power electronic systems requiring efficient and reliable power management.
- Automotive and industrial applications where high current handling and low on-state resistance are critical.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP100N10F7?
The maximum drain-source voltage (VDS) is 100 V.
- What is the typical on-state resistance (RDS(on)) of the STP100N10F7?
The typical on-state resistance (RDS(on)) is 6.8 mΩ at VGS = 10 V and ID = 40 A.
- What is the continuous drain current (ID) rating of the STP100N10F7?
The continuous drain current (ID) rating is 80 A.
- What is the package type of the STP100N10F7?
The package type is TO-220.
- What are the key features of the STripFET F7 technology used in the STP100N10F7?
The key features include ultra-low on-state resistance, excellent figure of merit, low Crss/Ciss ratio for EMI immunity, and high avalanche ruggedness.
- What are the typical switching times for the STP100N10F7?
The turn-on delay time (td(on)) is 27 ns, the rise time (tr) is 40 ns, the turn-off delay time (td(off)) is 46 ns, and the fall time (tf) is 15 ns.
- What is the total gate charge (Qg) of the STP100N10F7?
The total gate charge (Qg) is 61 nC.
- What are the common applications for the STP100N10F7?
Common applications include switching power supplies, motor drives, DC-DC converters, and high-power electronic systems in automotive and industrial sectors.
- How does the STP100N10F7 enhance EMI immunity?
The STP100N10F7 enhances EMI immunity through its low Crss/Ciss ratio.
- What is the significance of the enhanced trench gate structure in the STP100N10F7?
The enhanced trench gate structure results in very low on-state resistance, reduced internal capacitance, and faster switching times.
