STP150N10F7
  • Share:

STMicroelectronics STP150N10F7

Manufacturer No:
STP150N10F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 110A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP150N10F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is characterized by its low on-state resistance and enhanced trench gate structure, making it suitable for a wide range of power management applications. The STP150N10F7 offers high avalanche ruggedness and excellent thermal performance, ensuring reliable operation in demanding environments.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
ID (Drain Current) 110 A
RDS(on) (On-State Resistance) 0.0036 Ω
PD (Power Dissipation) 250 W (Tc)
TJ (Junction Temperature) -55°C to 175°C °C
Ciss (Input Capacitance) 8115 pF @ 50 V pF

Key Features

  • Low on-state resistance (RDS(on)) of 0.0036 Ω, minimizing power losses.
  • High avalanche ruggedness, ensuring the device can withstand high energy pulses.
  • Enhanced trench gate structure for improved performance and reliability.
  • Wide operating temperature range from -55°C to 175°C.
  • High power dissipation capability of up to 250 W (Tc).

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power management and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STP150N10F7?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance of the STP150N10F7?

    The typical on-state resistance (RDS(on)) is 0.0036 Ω.

  3. What is the maximum drain current of the STP150N10F7?

    The maximum drain current (ID) is 110 A.

  4. What is the operating temperature range of the STP150N10F7?

    The operating temperature range is from -55°C to 175°C.

  5. What is the power dissipation capability of the STP150N10F7?

    The power dissipation capability is up to 250 W (Tc).

  6. What technology is used in the STP150N10F7?

    The STP150N10F7 utilizes STMicroelectronics' STripFET™ F7 technology.

  7. What are some common applications of the STP150N10F7?

    Common applications include power supplies, motor control systems, automotive systems, industrial power management, and renewable energy systems.

  8. What is the input capacitance of the STP150N10F7?

    The input capacitance (Ciss) is 8115 pF at 50 V.

  9. Is the STP150N10F7 suitable for high-energy pulse applications?

    Yes, it is designed with high avalanche ruggedness to withstand high energy pulses.

  10. In what package is the STP150N10F7 available?

    The STP150N10F7 is available in a TO-220 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8115 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.98
149

Please send RFQ , we will respond immediately.

Same Series
1619972
1619972
CONN RCPT MALE 9POS GOLD SOLDER
STI150N10F7
STI150N10F7
MOSFET N-CH 100V 110A I2PAK

Similar Products

Part Number STP150N10F7 STP100N10F7 STP110N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 80A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 55A, 10V 8mOhm @ 40A, 10V 7mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V 61 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8115 pF @ 50 V 4369 pF @ 50 V 5500 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
HCF4069YUM013TR
HCF4069YUM013TR
STMicroelectronics
IC INVERTER 6CH 1 INP
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
VIPER100(022Y)
VIPER100(022Y)
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
AST1S31HF
AST1S31HF
STMicroelectronics
IC REG BUCK ADJ 3A 8VFDFPN
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN