STP150N10F7
  • Share:

STMicroelectronics STP150N10F7

Manufacturer No:
STP150N10F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 110A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP150N10F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is characterized by its low on-state resistance and enhanced trench gate structure, making it suitable for a wide range of power management applications. The STP150N10F7 offers high avalanche ruggedness and excellent thermal performance, ensuring reliable operation in demanding environments.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
ID (Drain Current) 110 A
RDS(on) (On-State Resistance) 0.0036 Ω
PD (Power Dissipation) 250 W (Tc)
TJ (Junction Temperature) -55°C to 175°C °C
Ciss (Input Capacitance) 8115 pF @ 50 V pF

Key Features

  • Low on-state resistance (RDS(on)) of 0.0036 Ω, minimizing power losses.
  • High avalanche ruggedness, ensuring the device can withstand high energy pulses.
  • Enhanced trench gate structure for improved performance and reliability.
  • Wide operating temperature range from -55°C to 175°C.
  • High power dissipation capability of up to 250 W (Tc).

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power management and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STP150N10F7?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance of the STP150N10F7?

    The typical on-state resistance (RDS(on)) is 0.0036 Ω.

  3. What is the maximum drain current of the STP150N10F7?

    The maximum drain current (ID) is 110 A.

  4. What is the operating temperature range of the STP150N10F7?

    The operating temperature range is from -55°C to 175°C.

  5. What is the power dissipation capability of the STP150N10F7?

    The power dissipation capability is up to 250 W (Tc).

  6. What technology is used in the STP150N10F7?

    The STP150N10F7 utilizes STMicroelectronics' STripFET™ F7 technology.

  7. What are some common applications of the STP150N10F7?

    Common applications include power supplies, motor control systems, automotive systems, industrial power management, and renewable energy systems.

  8. What is the input capacitance of the STP150N10F7?

    The input capacitance (Ciss) is 8115 pF at 50 V.

  9. Is the STP150N10F7 suitable for high-energy pulse applications?

    Yes, it is designed with high avalanche ruggedness to withstand high energy pulses.

  10. In what package is the STP150N10F7 available?

    The STP150N10F7 is available in a TO-220 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8115 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.98
149

Please send RFQ , we will respond immediately.

Same Series
1619972
1619972
CONN RCPT MALE 9POS GOLD SOLDER
STI150N10F7
STI150N10F7
MOSFET N-CH 100V 110A I2PAK

Similar Products

Part Number STP150N10F7 STP100N10F7 STP110N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 80A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 55A, 10V 8mOhm @ 40A, 10V 7mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V 61 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8115 pF @ 50 V 4369 pF @ 50 V 5500 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN

Related Product By Brand

STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM32L496VET6
STM32L496VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
L78M05ACDT-TR
L78M05ACDT-TR
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN