STP150N10F7
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STMicroelectronics STP150N10F7

Manufacturer No:
STP150N10F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 110A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP150N10F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is characterized by its low on-state resistance and enhanced trench gate structure, making it suitable for a wide range of power management applications. The STP150N10F7 offers high avalanche ruggedness and excellent thermal performance, ensuring reliable operation in demanding environments.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
ID (Drain Current) 110 A
RDS(on) (On-State Resistance) 0.0036 Ω
PD (Power Dissipation) 250 W (Tc)
TJ (Junction Temperature) -55°C to 175°C °C
Ciss (Input Capacitance) 8115 pF @ 50 V pF

Key Features

  • Low on-state resistance (RDS(on)) of 0.0036 Ω, minimizing power losses.
  • High avalanche ruggedness, ensuring the device can withstand high energy pulses.
  • Enhanced trench gate structure for improved performance and reliability.
  • Wide operating temperature range from -55°C to 175°C.
  • High power dissipation capability of up to 250 W (Tc).

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power management and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STP150N10F7?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance of the STP150N10F7?

    The typical on-state resistance (RDS(on)) is 0.0036 Ω.

  3. What is the maximum drain current of the STP150N10F7?

    The maximum drain current (ID) is 110 A.

  4. What is the operating temperature range of the STP150N10F7?

    The operating temperature range is from -55°C to 175°C.

  5. What is the power dissipation capability of the STP150N10F7?

    The power dissipation capability is up to 250 W (Tc).

  6. What technology is used in the STP150N10F7?

    The STP150N10F7 utilizes STMicroelectronics' STripFET™ F7 technology.

  7. What are some common applications of the STP150N10F7?

    Common applications include power supplies, motor control systems, automotive systems, industrial power management, and renewable energy systems.

  8. What is the input capacitance of the STP150N10F7?

    The input capacitance (Ciss) is 8115 pF at 50 V.

  9. Is the STP150N10F7 suitable for high-energy pulse applications?

    Yes, it is designed with high avalanche ruggedness to withstand high energy pulses.

  10. In what package is the STP150N10F7 available?

    The STP150N10F7 is available in a TO-220 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8115 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP150N10F7 STP100N10F7 STP110N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 80A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 55A, 10V 8mOhm @ 40A, 10V 7mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V 61 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8115 pF @ 50 V 4369 pF @ 50 V 5500 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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