STP150N10F7
  • Share:

STMicroelectronics STP150N10F7

Manufacturer No:
STP150N10F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 110A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP150N10F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is characterized by its low on-state resistance and enhanced trench gate structure, making it suitable for a wide range of power management applications. The STP150N10F7 offers high avalanche ruggedness and excellent thermal performance, ensuring reliable operation in demanding environments.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
ID (Drain Current) 110 A
RDS(on) (On-State Resistance) 0.0036 Ω
PD (Power Dissipation) 250 W (Tc)
TJ (Junction Temperature) -55°C to 175°C °C
Ciss (Input Capacitance) 8115 pF @ 50 V pF

Key Features

  • Low on-state resistance (RDS(on)) of 0.0036 Ω, minimizing power losses.
  • High avalanche ruggedness, ensuring the device can withstand high energy pulses.
  • Enhanced trench gate structure for improved performance and reliability.
  • Wide operating temperature range from -55°C to 175°C.
  • High power dissipation capability of up to 250 W (Tc).

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power management and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STP150N10F7?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance of the STP150N10F7?

    The typical on-state resistance (RDS(on)) is 0.0036 Ω.

  3. What is the maximum drain current of the STP150N10F7?

    The maximum drain current (ID) is 110 A.

  4. What is the operating temperature range of the STP150N10F7?

    The operating temperature range is from -55°C to 175°C.

  5. What is the power dissipation capability of the STP150N10F7?

    The power dissipation capability is up to 250 W (Tc).

  6. What technology is used in the STP150N10F7?

    The STP150N10F7 utilizes STMicroelectronics' STripFET™ F7 technology.

  7. What are some common applications of the STP150N10F7?

    Common applications include power supplies, motor control systems, automotive systems, industrial power management, and renewable energy systems.

  8. What is the input capacitance of the STP150N10F7?

    The input capacitance (Ciss) is 8115 pF at 50 V.

  9. Is the STP150N10F7 suitable for high-energy pulse applications?

    Yes, it is designed with high avalanche ruggedness to withstand high energy pulses.

  10. In what package is the STP150N10F7 available?

    The STP150N10F7 is available in a TO-220 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8115 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.98
149

Please send RFQ , we will respond immediately.

Same Series
1619972
1619972
CONN RCPT MALE 9POS GOLD SOLDER
STI150N10F7
STI150N10F7
MOSFET N-CH 100V 110A I2PAK

Similar Products

Part Number STP150N10F7 STP100N10F7 STP110N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 80A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 55A, 10V 8mOhm @ 40A, 10V 7mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V 61 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8115 pF @ 50 V 4369 pF @ 50 V 5500 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK

Related Product By Brand

SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
TDA7718N
TDA7718N
STMicroelectronics
IC AUDIO SIGNAL PROCESSR 28TSSOP
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32L475VGT6
STM32L475VGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN