STW20N95K5
  • Share:

STMicroelectronics STW20N95K5

Manufacturer No:
STW20N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 17.5A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW20N95K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is part of a series that includes the STB20N95K5, STF20N95K5, and STP20N95K5, each available in different packages such as D²PAK, TO-220FP, TO-220, and TO-247. The STW20N95K5 is notable for its low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 950 V
RDS(on) (Static Drain-Source On-Resistance) 0.275 (typ.), 0.330 (max.) Ω
ID (Drain Current, continuous at TC = 25 °C) 17.5 A
ID (Drain Current, continuous at TC = 100 °C) 11 A
PTOT (Total Dissipation at TC = 25 °C) 250 W
VGS (Gate-Source Voltage) ±30 V
Tj (Operating Junction Temperature Range) -55 to 150 °C
Rthj-case (Thermal Resistance Junction-Case) 0.5 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W

Key Features

  • Industry’s lowest RDS(on) x area, ensuring high efficiency and power density.
  • Best figure of merit (FoM) for superior performance.
  • Ultra-low gate charge for fast switching times.
  • 100% avalanche tested for robustness.
  • Zener-protected gate for enhanced ESD performance.

Applications

The STW20N95K5 is designed for various high-voltage switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • High-voltage power management in consumer and industrial electronics.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW20N95K5?

    The maximum drain-source voltage (VDS) is 950 V.

  2. What is the typical on-resistance (RDS(on)) of the STW20N95K5?

    The typical on-resistance (RDS(on)) is 0.275 Ω.

  3. What is the maximum continuous drain current (ID) at TC = 25 °C?

    The maximum continuous drain current (ID) at TC = 25 °C is 17.5 A.

  4. What is the total dissipation (PTOT) at TC = 25 °C?

    The total dissipation (PTOT) at TC = 25 °C is 250 W.

  5. What is the operating junction temperature range (Tj) of the STW20N95K5?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  6. Is the STW20N95K5 100% avalanche tested?

    Yes, the STW20N95K5 is 100% avalanche tested.

  7. What type of protection does the STW20N95K5 have against ESD?

    The STW20N95K5 has built-in Zener-protected gates for enhanced ESD performance.

  8. In what packages is the STW20N95K5 available?

    The STW20N95K5 is available in the TO-247 package.

  9. What is the thermal resistance junction-case (Rthj-case) of the STW20N95K5?

    The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.

  10. What are some typical applications of the STW20N95K5?

    Typical applications include power supplies, DC-DC converters, motor control systems, and industrial automation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:330mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$8.40
101

Please send RFQ , we will respond immediately.

Same Series
STB20N95K5
STB20N95K5
MOSFET N-CH 950V 17.5A D2PAK
STP20N95K5
STP20N95K5
MOSFET N-CH 950V 17.5A TO220-3
STF20N95K5
STF20N95K5
MOSFET N-CH 950V 17.5A TO220FP

Similar Products

Part Number STW20N95K5 STW22N95K5 STW40N95K5 STW10N95K5 STW20N90K5 STW20N95DK5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V 950 V 950 V 900 V 950 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc) 17.5A (Tc) 38A (Tc) 8A (Tc) 20A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 9A, 10V 330mOhm @ 9A, 10V 130mOhm @ 19A, 10V 800mOhm @ 4A, 10V 250mOhm @ 10A, 10V 330mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 48 nC @ 10 V 93 nC @ 10 V 22 nC @ 10 V 40 nC @ 10 V 50.7 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V 1550 pF @ 100 V 3300 pF @ 100 V 630 pF @ 100 V 1500 pF @ 100 V 1600 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 250W (Tc) 250W (Tc) 450W (Tc) 130W (Tc) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STA333BWJ13TR
STA333BWJ13TR
STMicroelectronics
IC FULLY INTEG PROC POWERSSO-36
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
STM32L562VET6
STM32L562VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
STM32F101ZDT6
STM32F101ZDT6
STMicroelectronics
IC MCU 32BIT 384KB FLASH 144LQFP
M74HC174RM13TR
M74HC174RM13TR
STMicroelectronics
IC FF D-TYPE SNGL 6BIT 16SOP
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA