STW20N95K5
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STMicroelectronics STW20N95K5

Manufacturer No:
STW20N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 17.5A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW20N95K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is part of a series that includes the STB20N95K5, STF20N95K5, and STP20N95K5, each available in different packages such as D²PAK, TO-220FP, TO-220, and TO-247. The STW20N95K5 is notable for its low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 950 V
RDS(on) (Static Drain-Source On-Resistance) 0.275 (typ.), 0.330 (max.) Ω
ID (Drain Current, continuous at TC = 25 °C) 17.5 A
ID (Drain Current, continuous at TC = 100 °C) 11 A
PTOT (Total Dissipation at TC = 25 °C) 250 W
VGS (Gate-Source Voltage) ±30 V
Tj (Operating Junction Temperature Range) -55 to 150 °C
Rthj-case (Thermal Resistance Junction-Case) 0.5 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W

Key Features

  • Industry’s lowest RDS(on) x area, ensuring high efficiency and power density.
  • Best figure of merit (FoM) for superior performance.
  • Ultra-low gate charge for fast switching times.
  • 100% avalanche tested for robustness.
  • Zener-protected gate for enhanced ESD performance.

Applications

The STW20N95K5 is designed for various high-voltage switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • High-voltage power management in consumer and industrial electronics.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW20N95K5?

    The maximum drain-source voltage (VDS) is 950 V.

  2. What is the typical on-resistance (RDS(on)) of the STW20N95K5?

    The typical on-resistance (RDS(on)) is 0.275 Ω.

  3. What is the maximum continuous drain current (ID) at TC = 25 °C?

    The maximum continuous drain current (ID) at TC = 25 °C is 17.5 A.

  4. What is the total dissipation (PTOT) at TC = 25 °C?

    The total dissipation (PTOT) at TC = 25 °C is 250 W.

  5. What is the operating junction temperature range (Tj) of the STW20N95K5?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  6. Is the STW20N95K5 100% avalanche tested?

    Yes, the STW20N95K5 is 100% avalanche tested.

  7. What type of protection does the STW20N95K5 have against ESD?

    The STW20N95K5 has built-in Zener-protected gates for enhanced ESD performance.

  8. In what packages is the STW20N95K5 available?

    The STW20N95K5 is available in the TO-247 package.

  9. What is the thermal resistance junction-case (Rthj-case) of the STW20N95K5?

    The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.

  10. What are some typical applications of the STW20N95K5?

    Typical applications include power supplies, DC-DC converters, motor control systems, and industrial automation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:330mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STB20N95K5
STB20N95K5
MOSFET N-CH 950V 17.5A D2PAK
STP20N95K5
STP20N95K5
MOSFET N-CH 950V 17.5A TO220-3
STW20N95K5
STW20N95K5
MOSFET N-CH 950V 17.5A TO247-3

Similar Products

Part Number STW20N95K5 STW22N95K5 STW40N95K5 STW10N95K5 STW20N90K5 STW20N95DK5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V 950 V 950 V 900 V 950 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc) 17.5A (Tc) 38A (Tc) 8A (Tc) 20A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 9A, 10V 330mOhm @ 9A, 10V 130mOhm @ 19A, 10V 800mOhm @ 4A, 10V 250mOhm @ 10A, 10V 330mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 48 nC @ 10 V 93 nC @ 10 V 22 nC @ 10 V 40 nC @ 10 V 50.7 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V 1550 pF @ 100 V 3300 pF @ 100 V 630 pF @ 100 V 1500 pF @ 100 V 1600 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 250W (Tc) 250W (Tc) 450W (Tc) 130W (Tc) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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