STW40N95K5
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STMicroelectronics STW40N95K5

Manufacturer No:
STW40N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 38A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW40N95K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is characterized by its proprietary vertical structure, which significantly reduces on-resistance and gate charge, making it ideal for applications that require high power density and efficiency.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)950 V
RDS(on) (On-Resistance)0.110 Ω (typ.)
ID (Drain Current)38 A
VGS (Gate-Source Voltage)±20 V
PD (Power Dissipation)Dependent on package and thermal conditions
TJ (Junction Temperature)-55°C to 150°C
PackageTO-247
RoHS ComplianceEcopack2

Key Features

  • Industry’s lowest RDS(on)x area
  • Industry’s best figure of merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

The STW40N95K5 is suitable for a variety of high-power applications, including but not limited to:

  • Switch-mode power supplies
  • Motor control and drives
  • Power factor correction (PFC)
  • High-voltage DC-DC converters
  • Industrial and automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage of the STW40N95K5?
    The maximum drain-source voltage (VDS) is 950 V.
  2. What is the typical on-resistance of the STW40N95K5?
    The typical on-resistance (RDS(on)) is 0.110 Ω.
  3. What is the maximum drain current of the STW40N95K5?
    The maximum drain current (ID) is 38 A.
  4. What package is the STW40N95K5 available in?
    The STW40N95K5 is available in the TO-247 package.
  5. Is the STW40N95K5 RoHS compliant?
    Yes, the STW40N95K5 is RoHS compliant with an Ecopack2 rating.
  6. What are the key features of the STW40N95K5?
    The key features include industry’s lowest RDS(on)x area, industry’s best figure of merit (FoM), ultra-low gate charge, 100% avalanche tested, and Zener-protected.
  7. What are some typical applications for the STW40N95K5?
    Typical applications include switch-mode power supplies, motor control and drives, power factor correction (PFC), high-voltage DC-DC converters, and industrial and automotive systems.
  8. What is the junction temperature range of the STW40N95K5?
    The junction temperature range is -55°C to 150°C.
  9. Where can I find more detailed specifications and resources for the STW40N95K5?
    You can find detailed specifications and resources on the STMicroelectronics official website and through authorized distributors.
  10. Is the STW40N95K5 suitable for automotive applications?
    While the STW40N95K5 itself is not specifically marked as automotive-grade, there are other models in the MDmesh K5 series that are automotive-grade and may be more suitable for such applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:93 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3300 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):450W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW40N95K5 STW20N95K5 STW40N90K5 STW40N95DK5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V 900 V 950 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 17.5A (Tc) 40A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 19A, 10V 330mOhm @ 9A, 10V 99mOhm @ 20A, 10V 130mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V 40 nC @ 10 V 89 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 100 V 1500 pF @ 100 V 3260 pF @ 100 V 3480 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 450W (Tc) 250W (Tc) 446W (Tc) 450W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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