STF3NK100Z
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STMicroelectronics STF3NK100Z

Manufacturer No:
STF3NK100Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1000V 2.5A TO220FP
Delivery:
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Product Introduction

Overview

The STF3NK100Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to provide high performance and reliability in various power management applications. It features a Zener protection mechanism to enhance robustness against voltage spikes and other transient conditions.

Key Specifications

ParameterValue
Voltage Rating (Vds)1000 V
Continuous Drain Current (Id)2.5 A
Power Dissipation (Pd)25 W
On-Resistance (Rds(on))5.4 Ohm (typ.)
Threshold Voltage (Vth)4.5 V
Package TypeTO-220FP

Key Features

  • High voltage rating of 1000 V, making it suitable for high-voltage applications.
  • Low on-resistance (Rds(on)) of 5.4 Ohm (typ.), which minimizes power losses.
  • Zener protection to safeguard against voltage spikes and transient conditions.
  • High power dissipation capability of 25 W.
  • TO-220FP package for efficient heat dissipation and ease of mounting.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • High-voltage power management in consumer and industrial electronics.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the voltage rating of the STF3NK100Z MOSFET?
    The STF3NK100Z has a voltage rating of 1000 V.
  2. What is the continuous drain current of the STF3NK100Z?
    The continuous drain current is 2.5 A.
  3. What is the typical on-resistance of the STF3NK100Z?
    The typical on-resistance is 5.4 Ohm.
  4. What type of package does the STF3NK100Z come in?
    The STF3NK100Z comes in a TO-220FP package.
  5. Does the STF3NK100Z have any built-in protection features?
    Yes, it has Zener protection to safeguard against voltage spikes and transient conditions.
  6. What are some common applications for the STF3NK100Z?
    Common applications include power supplies, motor control systems, industrial automation, and high-voltage power management in various electronics.
  7. What is the power dissipation capability of the STF3NK100Z?
    The power dissipation capability is 25 W.
  8. What technology is used in the STF3NK100Z?
    The STF3NK100Z is developed using STMicroelectronics' SuperMESH technology.
  9. Is the STF3NK100Z suitable for high-temperature environments?
    While it can operate in a range of temperatures, specific temperature limits should be checked in the datasheet for precise details.
  10. Where can I find more detailed specifications for the STF3NK100Z?
    You can find detailed specifications in the datasheet available on STMicroelectronics' official website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:601 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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$4.07
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Same Series
STD3NK100Z
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STP3NK100Z
STP3NK100Z
MOSFET N-CH 1000V 2.5A TO220AB

Similar Products

Part Number STF3NK100Z STF5NK100Z STF8NK100Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 3.5A (Tc) 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 1.25A, 10V 3.7Ohm @ 1.75A, 10V 1.85Ohm @ 3.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 59 nC @ 10 V 102 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 601 pF @ 25 V 1154 pF @ 25 V 2180 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 25W (Tc) 30W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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