STF5NK100Z
  • Share:

STMicroelectronics STF5NK100Z

Manufacturer No:
STF5NK100Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1000V 3.5A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF5NK100Z is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is designed with significant improvements over the traditional PowerMESH™ layout, offering lower on-resistance and superior dv/dt capability. This makes it ideal for demanding applications requiring high efficiency and reliability. The STF5NK100Z is available in TO-220FP, TO-220, and TO-247 packages, catering to various design needs.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 1000 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 3.5 A
Pulsed Drain Current (IDM) 14 A
Static Drain-Source On-Resistance (RDS(on)) < 3.7 Ω
Gate Threshold Voltage (VGS(th)) 3 - 4.5 V
Maximum Junction Temperature (TJMAX) 150 °C
Maximum Power Dissipation (PTOT) at TC = 25°C 30 W
Package Type TO-220FP, TO-220, TO-247

Key Features

  • Extremely high dv/dt capability to ensure optimal performance in demanding applications.
  • 100% avalanche tested for robustness and reliability.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitances to reduce switching losses.
  • Integrated back-to-back Zener diodes for enhanced ESD protection and to safely absorb voltage transients.
  • Very good manufacturing repeatability for consistent device performance.

Applications

  • High current, high speed switching applications.
  • Ideal for off-line power supplies due to its high voltage and current handling capabilities.
  • Motor drives and DC-DC converters where high efficiency and reliability are crucial.

Q & A

  1. What is the maximum drain-source voltage of the STF5NK100Z MOSFET?

    The maximum drain-source voltage (VDS) is 1000 V.

  2. What are the typical and maximum values of the static drain-source on-resistance (RDS(on))?

    The typical value is 2.7 Ω, and the maximum value is 3.7 Ω.

  3. What is the continuous drain current (ID) at 25°C?

    The continuous drain current (ID) at 25°C is 3.5 A.

  4. What is the maximum junction temperature (TJMAX) for the STF5NK100Z?

    The maximum junction temperature (TJMAX) is 150°C.

  5. What types of packages are available for the STF5NK100Z?

    The STF5NK100Z is available in TO-220FP, TO-220, and TO-247 packages.

  6. What is the significance of the integrated back-to-back Zener diodes in the STF5NK100Z?

    The integrated back-to-back Zener diodes enhance ESD protection and safely absorb possible voltage transients from gate to source, eliminating the need for external components).

  7. What are some typical applications for the STF5NK100Z MOSFET?

    Typical applications include high current, high speed switching, off-line power supplies, motor drives, and DC-DC converters).

  8. What is the maximum power dissipation (PTOT) at 25°C for the STF5NK100Z in a TO-220FP package?

    The maximum power dissipation (PTOT) at 25°C for the TO-220FP package is 30 W).

  9. Is the STF5NK100Z RoHS compliant?
  10. What is the gate threshold voltage range for the STF5NK100Z?

    The gate threshold voltage (VGS(th)) range is from 3 V to 4.5 V).

  11. What is the typical gate charge at VGS = 10 V for the STF5NK100Z?

    The typical gate charge at VGS = 10 V is 42 nC).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1154 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$4.58
165

Please send RFQ , we will respond immediately.

Same Series
STP5NK100Z
STP5NK100Z
MOSFET N-CH 1000V 3.5A TO220AB
STW5NK100Z
STW5NK100Z
MOSFET N-CH 1000V 3.5A TO247-3

Similar Products

Part Number STF5NK100Z STF8NK100Z STF3NK100Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) 6.5A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.7Ohm @ 1.75A, 10V 1.85Ohm @ 3.15A, 10V 6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 102 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1154 pF @ 25 V 2180 pF @ 25 V 601 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 40W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

STPS30H100CT
STPS30H100CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 100V TO220
BYT71-800
BYT71-800
STMicroelectronics
DIODE GEN PURP 800V 6A TO220AC
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8