STW5NK100Z
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STMicroelectronics STW5NK100Z

Manufacturer No:
STW5NK100Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1000V 3.5A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW5NK100Z is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH3™ series, known for its advanced technology that enhances switching performance and reliability. The STW5NK100Z is designed for high-voltage applications, offering a drain-source voltage (Vds) of 1000V and a continuous drain current (Id) of 3.5A. It is available in TO-220, TO-220FP, and TO-247 packages, making it versatile for various power management and switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (Vds)1000V
Continuous Drain Current (Id)3.5A
Power Dissipation (Pd)125W
On-State Resistance (Rds(on))2.7Ω
Gate Threshold Voltage (Vgs(th))2-4V
Package TypesTO-220, TO-220FP, TO-247

Key Features

  • Extremely high dv/dt capability, ensuring robustness against high voltage spikes.
  • Minimized gate charge, which reduces switching losses and improves efficiency.
  • 100% avalanche tested, providing reliability in demanding applications.
  • Very good manufacturing repeatability, ensuring consistent performance across devices.
  • Very low intrinsic capacitance, which enhances high-frequency performance.
  • Integrated Zener diodes for protection against voltage spikes, eliminating the need for external components.

Applications

The STW5NK100Z is suitable for a variety of high-voltage and high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-voltage switching and power management in consumer and industrial electronics.

Q & A

  1. What is the maximum drain-source voltage of the STW5NK100Z? The maximum drain-source voltage (Vds) is 1000V.
  2. What is the continuous drain current rating of the STW5NK100Z? The continuous drain current (Id) is 3.5A.
  3. What are the available package types for the STW5NK100Z? The STW5NK100Z is available in TO-220, TO-220FP, and TO-247 packages.
  4. Does the STW5NK100Z have built-in protection against voltage spikes? Yes, it has integrated Zener diodes for protection against voltage spikes.
  5. What is the typical on-state resistance (Rds(on)) of the STW5NK100Z? The typical on-state resistance (Rds(on)) is 2.7Ω.
  6. Is the STW5NK100Z suitable for high-frequency applications? Yes, it has very low intrinsic capacitance, making it suitable for high-frequency applications.
  7. What is the power dissipation (Pd) of the STW5NK100Z? The power dissipation (Pd) is 125W.
  8. Is the STW5NK100Z 100% avalanche tested? Yes, it is 100% avalanche tested for reliability.
  9. What are some common applications of the STW5NK100Z? Common applications include power supplies, motor control systems, industrial automation, and renewable energy systems.
  10. Does the STW5NK100Z have good manufacturing repeatability? Yes, it has very good manufacturing repeatability, ensuring consistent performance across devices.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1154 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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