STW5NK100Z
  • Share:

STMicroelectronics STW5NK100Z

Manufacturer No:
STW5NK100Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1000V 3.5A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW5NK100Z is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH3™ series, known for its advanced technology that enhances switching performance and reliability. The STW5NK100Z is designed for high-voltage applications, offering a drain-source voltage (Vds) of 1000V and a continuous drain current (Id) of 3.5A. It is available in TO-220, TO-220FP, and TO-247 packages, making it versatile for various power management and switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (Vds)1000V
Continuous Drain Current (Id)3.5A
Power Dissipation (Pd)125W
On-State Resistance (Rds(on))2.7Ω
Gate Threshold Voltage (Vgs(th))2-4V
Package TypesTO-220, TO-220FP, TO-247

Key Features

  • Extremely high dv/dt capability, ensuring robustness against high voltage spikes.
  • Minimized gate charge, which reduces switching losses and improves efficiency.
  • 100% avalanche tested, providing reliability in demanding applications.
  • Very good manufacturing repeatability, ensuring consistent performance across devices.
  • Very low intrinsic capacitance, which enhances high-frequency performance.
  • Integrated Zener diodes for protection against voltage spikes, eliminating the need for external components.

Applications

The STW5NK100Z is suitable for a variety of high-voltage and high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-voltage switching and power management in consumer and industrial electronics.

Q & A

  1. What is the maximum drain-source voltage of the STW5NK100Z? The maximum drain-source voltage (Vds) is 1000V.
  2. What is the continuous drain current rating of the STW5NK100Z? The continuous drain current (Id) is 3.5A.
  3. What are the available package types for the STW5NK100Z? The STW5NK100Z is available in TO-220, TO-220FP, and TO-247 packages.
  4. Does the STW5NK100Z have built-in protection against voltage spikes? Yes, it has integrated Zener diodes for protection against voltage spikes.
  5. What is the typical on-state resistance (Rds(on)) of the STW5NK100Z? The typical on-state resistance (Rds(on)) is 2.7Ω.
  6. Is the STW5NK100Z suitable for high-frequency applications? Yes, it has very low intrinsic capacitance, making it suitable for high-frequency applications.
  7. What is the power dissipation (Pd) of the STW5NK100Z? The power dissipation (Pd) is 125W.
  8. Is the STW5NK100Z 100% avalanche tested? Yes, it is 100% avalanche tested for reliability.
  9. What are some common applications of the STW5NK100Z? Common applications include power supplies, motor control systems, industrial automation, and renewable energy systems.
  10. Does the STW5NK100Z have good manufacturing repeatability? Yes, it has very good manufacturing repeatability, ensuring consistent performance across devices.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1154 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$4.76
60

Please send RFQ , we will respond immediately.

Same Series
STP5NK100Z
STP5NK100Z
MOSFET N-CH 1000V 3.5A TO220AB
STW5NK100Z
STW5NK100Z
MOSFET N-CH 1000V 3.5A TO247-3

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN