STP5NK100Z
  • Share:

STMicroelectronics STP5NK100Z

Manufacturer No:
STP5NK100Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1000V 3.5A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP5NK100Z is a part of the SuperMESH series of Power MOSFETs from STMicroelectronics. This N-channel MOSFET is designed with significant improvements over the traditional PowerMESH layout, offering lower on-resistance and superior dv/dt capability. This makes it ideal for demanding applications, complementing ST's broad range of high voltage MOSFETs, including the revolutionary MDmesh products.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 1000 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 3.5 A
Continuous Drain Current (ID) at TC = 100°C 2.2 A
Pulsed Drain Current (IDM) 14 A
Total Dissipation at TC = 25°C 125 W
Derating Factor 1 W/°C W/°C
Drain-Source Breakdown Voltage (V(BR)DSS) 1000 V
Gate Threshold Voltage (VGS(th)) 3 - 4.5 V
Static Drain-Source On Resistance (RDS(on)) 2.7 - 3.7 Ω
Package Type TO-220, TO-220FP, TO-247

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatibility
  • Integrated Zener diodes for enhanced ESD capability and protection against voltage transients

Applications

  • Switching applications
  • High current, high speed switching
  • Ideal for off-line power supplies

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP5NK100Z MOSFET?

    The maximum drain-source voltage (VDS) is 1000 V.

  2. What is the typical on-resistance (RDS(on)) of the STP5NK100Z?

    The typical on-resistance (RDS(on)) is 2.7 Ω, with a maximum of 3.7 Ω.

  3. What are the available package types for the STP5NK100Z?

    The STP5NK100Z is available in TO-220, TO-220FP, and TO-247 packages.

  4. What is the continuous drain current (ID) at 25°C for the STP5NK100Z?

    The continuous drain current (ID) at 25°C is 3.5 A.

  5. Does the STP5NK100Z have built-in protection against voltage transients?
  6. What is the gate-source threshold voltage (VGS(th)) range for the STP5NK100Z?

    The gate-source threshold voltage (VGS(th)) range is from 3 V to 4.5 V.

  7. Is the STP5NK100Z 100% avalanche tested?
  8. What are some typical applications for the STP5NK100Z?

    Typical applications include switching applications, high current, high speed switching, and off-line power supplies.

  9. What is the total dissipation at 25°C for the STP5NK100Z in a TO-220 package?

    The total dissipation at 25°C for the TO-220 package is 125 W.

  10. Does the STP5NK100Z have very low intrinsic capacitances?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1154 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$4.26
141

Please send RFQ , we will respond immediately.

Same Series
STP5NK100Z
STP5NK100Z
MOSFET N-CH 1000V 3.5A TO220AB
STW5NK100Z
STW5NK100Z
MOSFET N-CH 1000V 3.5A TO247-3

Similar Products

Part Number STP5NK100Z STP3NK100Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.7Ohm @ 1.75A, 10V 6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1154 pF @ 25 V 601 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK

Related Product By Brand

STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC