Overview
The STD3N62K3, along with its variants STF3N62K3 and STU3N62K3, are N-channel Power MOSFETs developed by STMicroelectronics using their advanced MDmesh™ K3 technology. These devices are characterized by their extremely low on-resistance, superior dynamic performance, and high avalanche capability, making them suitable for the most demanding applications. Available in DPAK, TO-220FP, and IPAK packages, these MOSFETs offer a range of options for different design requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 620 | V |
| RDS(on) max. (On-Resistance) | 2.5 | Ω |
| ID (Drain Current) | 2.7 | A |
| Tj (Operating Junction Temperature) | -55 to 150 | °C |
| Ciss (Input Capacitance) | 385 | pF |
| Coss (Output Capacitance) | 55 | pF |
| Crss (Reverse Transfer Capacitance) | 6 | pF |
| Rthj-case (Thermal Resistance Junction-Case) | 2.78 (DPAK), 6.25 (TO-220FP), 2.78 (IPAK) | °C/W |
| IAR (Avalanche Current) | 2.7 | A |
| EAS (Single Pulse Avalanche Energy) | 100 | mJ |
Key Features
- Extremely low on-resistance and superior dynamic performance
- High avalanche capability
- 100% avalanche tested
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected gate-source for enhanced ESD performance
- High dv/dt capability
Applications
These MOSFETs are suitable for a variety of demanding applications, including:
- Switching applications
- High-power electronic systems
- Industrial and automotive systems requiring high reliability and performance
Q & A
- What is the maximum drain-source voltage (VDS) of the STD3N62K3?
The maximum drain-source voltage (VDS) is 620 V.
- What is the typical on-resistance (RDS(on)) of the STD3N62K3?
The typical on-resistance (RDS(on)) is 2.5 Ω.
- What are the available package types for the STD3N62K3?
The available package types are DPAK, TO-220FP, and IPAK.
- What is the operating junction temperature range of the STD3N62K3?
The operating junction temperature range is -55 to 150 °C.
- What is the input capacitance (Ciss) of the STD3N62K3?
The input capacitance (Ciss) is 385 pF.
- Does the STD3N62K3 have built-in ESD protection?
Yes, it has built-in back-to-back Zener diodes for enhanced ESD performance.
- What is the single pulse avalanche energy (EAS) of the STD3N62K3?
The single pulse avalanche energy (EAS) is 100 mJ.
- What are some typical applications for the STD3N62K3?
Typical applications include switching applications, high-power electronic systems, and industrial and automotive systems.
- How is the thermal performance of the STD3N62K3?
The thermal resistance junction-case (Rthj-case) varies by package: 2.78 °C/W for DPAK and IPAK, and 6.25 °C/W for TO-220FP.
- Is the STD3N62K3 100% avalanche tested?
Yes, the STD3N62K3 is 100% avalanche tested.
